Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 8026569 | Semiconductor device In one embodiment of the present invention, a semiconductor device has a photodiode over a P-type substrate, an NPN transistor formed over the P-type substrate, an N+-type buried region provided right under the NPN transistor as being buried in the P-type... | 09/27/2011 |
| 7936041 | Schottky barrier diodes for millimeter wave SiGe BICMOS applications The structure for millimeter-wave frequency applications, includes a Schottky barrier diode (SBD) with a cutoff frequency (FC) above 1.0 THz formed on a SiGe BiCMOS wafer. A method is also contemplated for forming a Schottky barrier diode on a SiGe BiCMOS... | 05/03/2011 |
| 7466004 | Diode structure to suppress parasitic current A diode conducts current between an anode terminal and a cathode terminal. The diode includes a parasitic transistor formed between one of the terminals and the substrate. The diode also includes a second transistor that competes with the parasitic transistor to dir... | 12/16/2008 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7271403 | Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments. ... | 09/18/2007 |
| 7193250 | Light-emitting element having PNPN-structure and light-emitting element array A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A s... | 03/20/2007 |
| 7176548 | Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 02/13/2007 |
| 7157785 | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the ... | 01/02/2007 |
| 7148561 | Ball grid array substrate strip with warpage-preventive linkage structure A substrate strip with warpage-preventive linkage structure is proposed for a BGA (Ball Grid Array) application. The proposed substrate strip is composed of a series of substrates, each being used for the construction of an individual unit of a BGA package, and whic... | 12/12/2006 |
| 7126314 | Non-synchronous boost converter including switched schottky diode for true disconnect A non-synchronous boost converter includes a switched Schottky diode to rectify the switched output voltage of the boost converter where the switched Schottky diode has forward conduction blocking capability. The switched Schottky diode has an anode terminal coupled... | 10/24/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 7064407 | JFET controlled schottky barrier diode A JFET controlled Schottky barrier diode includes a p-type diffusion region integrated into the cathode of the Schottky diode to form an integrated JFET where the integrated JFET provides on-off control of the Schottky barrier diode. The p-type diffusion region encl... | 06/20/2006 |
| 7038244 | Semiconductor device and method of manufacturing the same A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, w... | 05/02/2006 |
| 7030455 | Integrated electromagnetic shielding device To isolate at least one electric or electronic element (16, 58), for example an interconnection integrated onto a semiconductor substrate (12), this device comprises at least one isolation means chosen from an isolating layer (84, 86, 90) extend... | 04/18/2006 |
| 7009269 | Semiconductor device In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other... | 03/07/2006 |
| 6989557 | Bipolar junction transistor and fabricating method A bipolar junction transistor (BJT) includes a dielectric layer formed on a predetermined region of a substrate, an opening formed in the dielectric layer and a portion of the substrate being exposed, a heavily doped polysilicon layer formed on a sidewall of the ope... | 01/24/2006 |
| 6972442 | Efficiently fabricated bipolar transistor One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the fir... | 12/06/2005 |
| 6949764 | Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical ... | 09/27/2005 |
| 6943426 | Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 09/13/2005 |
| 6933751 | Integrated Schottky transistor logic configuration A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the Schottly diodes and transistor do not need to be isolated from one a... | 08/23/2005 |
| 6921958 | IGBT with a Schottky barrier diode A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive sig... | 07/26/2005 |
| 6852580 | Method of fabricating semiconductor device The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collect... | 02/08/2005 |
| 6849871 | Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical ... | 02/01/2005 |
| 6838709 | Bipolar transistor A bipolar transistor includes the first group of transistors 610a, the second group of transistors 610b, the third group of transistors 610c and the fourth group of transistors 610d. The groups of transistors h... | 01/04/2005 |
| 6809400 | Composite pinin collector structure for heterojunction bipolar transistors This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables ... | 10/26/2004 |
| 6744111 | Schottky-barrier tunneling transistor A three-terminal semiconductor transistor device comprises a semiconductor base region in contact with a first electric terminal, a conductive emitter region in contact with the semiconductor base region, forming a first Schottky barrier junction at the interface of... | 06/01/2004 |
| 6703685 | Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo... | 03/09/2004 |
| 6703283 | Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semi... | 03/09/2004 |
| 6573582 | Semiconductor device A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolatin... | 06/03/2003 |
| 6525388 | Compound semiconductor device having diode connected between emitter and collector of bipolar transistor A heterojunction bipolartansistor is fabricated on a semi-insulating substrate, and has a mesa structure, wherein an emitter signal line of titanium-platinum-gold alloy is held in contact with the collector layer as well as the emitter layer for forming a... | 02/25/2003 |
| 6417554 | Latch free IGBT with schottky gate A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The... | 07/09/2002 |
| 6252282 | Semiconductor device with a bipolar transistor, and method of manufacturing such a device The invention relates to a semiconductor device including a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the... | 06/26/2001 |
| 6046486 | Heterojunction bipoplar mixer circuitry Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of d... | 04/04/2000 |
| 6037646 | High-frequency GaAs substrate based schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector... | 03/14/2000 |
| 5930636 | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector... | 07/27/1999 |
| 5889317 | Leadframe for integrated circuit package A leadframe for an IC package and a method of manufacturing the same are provided. The leadframe can be manufactured in such a manner as to provide suitable bondability, molding compound characteristic, and solderability. The leadframe includes a base str... | 03/30/1999 |
| 5763918 | ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to decrease the latch-up susceptibility of an ESD structure by suppressing the injection of minority carriers that cause transist... | 06/09/1998 |
| 5760424 | Integrated circuit arrangement having at least one IGBT An integrated circuit arrangement includes an IGBT, provided with a secondary contact connected with the drift area, and a diode connected between the secondary contact and the anode of the IGBT. The cathode of the diode is connected with the anode of the... | 06/02/1998 |
| 5583348 | Method for making a schottky diode that is compatible with high performance transistor structures A method for making a schottky diode structure (10) simultaneously with a polysilicon contact structure (31,33) to a transistor is provided. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconductor region (22a) o... | 12/10/1996 |
| 5567969 | Compound modulated integrated transistor structure with reduced bipolar switch back effect Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field effect transistor pair, each including a source and a drain region with a gate contact positioned therebetween,... | 10/22/1996 |
