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| Number | Title | Issue Date |
| 8018020 | Schottky barrier diode and manufacturing method thereof The invention provides a Schottky barrier diode in which a forward voltage is low, a backward leakage current is small, and a withstanding voltage of an element is high, by improving both the forward voltage VF and the backward leakage current IR. A Schottky barrier... | 09/13/2011 |
| 7696599 | Trench MOSFET A trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) ad... | 04/13/2010 |
| 7569905 | Systems and methods for electrical contacts to arrays of vertically aligned nanorods Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a pl... | 08/04/2009 |
| 7397102 | Junction barrier schottky with low forward drop and improved reverse block voltage This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. ... | 07/08/2008 |
| 7391058 | Semiconductor devices and methods of making same A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, ... | 06/24/2008 |
| 7388271 | Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semicondu... | 06/17/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7220661 | Method of manufacturing a Schottky barrier rectifier A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 05/22/2007 |
| 7183610 | Super trench MOSFET including buried source electrode and method of fabricating the same In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias o... | 02/27/2007 |
| 7183193 | Integrated device technology using a buried power buss for major device and circuit advantages A method for providing an improved integrated circuit device is disclosed. The method comprises the steps of providing active and passive areas in the substrate, providing a plurality of slots in the substrate after providing the active and passive areas, and oxidiz... | 02/27/2007 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7078783 | Vertical unipolar component A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth bein... | 07/18/2006 |
| 7078296 | Self-aligned trench MOSFETs and methods for making the same Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOS... | 07/18/2006 |
| 7057333 | Method and device for extraction of electrons in a vacuum and emission cathodes for said device The method of the invention for extracting electrons in a vacuum consists in: making a cathode presenting at least one junction (9) between a metal (7) acting as an electron reservoir and an n-type semiconductor (8... | 06/06/2006 |
| 7033889 | Trenched semiconductor devices and their manufacture In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the tre... | 04/25/2006 |
| 7026650 | Multiple floating guard ring edge termination for silicon carbide devices Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on t... | 04/11/2006 |
| 6979874 | Semiconductor device and method of manufacturing thereof A plurality of p anode regions are formed at one surface of an n− substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a minimum impur... | 12/27/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
| 6956264 | Trenched semiconductor devices and their manufacture In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the tre... | 10/18/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6949774 | Gallium nitride based diodes with low forward voltage and low reverse current operation New Group III based diodes are disclosed having a low on state voltage (Vf), and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the ... | 09/27/2005 |
| 6921957 | Low forward voltage drop schottky barrier diode and manufacturing method therefor A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon t... | 07/26/2005 |
| 6846731 | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substr... | 01/25/2005 |
| 6787821 | Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance There is provided a compound semiconductor device that comprises a substrate formed of a first compound semiconductor, a graded channel layer formed on the substrate and formed of a second compound semiconductor layer, that lowers mostly an energy band gap in its in... | 09/07/2004 |
| 6753588 | Semiconductor rectifier A semiconductor rectifier includes an intermediate semiconductor region (29) extending between anode (9) and cathode (7) contacts. A trenched gate (19) with insulated sidewalls (15) and base (17) can deplete the intermediate... | 06/22/2004 |
| 6717229 | Distributed reverse surge guard A diode (20), having first and second conductive layers (24,26), a conductive pad (28), and a distributed reverse surge guard (22), provides increased protection from reverse current surges. The surge guard (22) includes an outer l... | 04/06/2004 |
| 6710419 | Method of manufacturing a schottky device An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistiv... | 03/23/2004 |
| 6710418 | Schottky rectifier with insulation-filled trenches and method of forming the same In accordance with an embodiment of the present invention, a semiconductor rectifier includes an insulation-filled trench formed in a semiconductor region. Strips of resistive material extend along the trench sidewalls. The strips of resistive material have a conduc... | 03/23/2004 |
| 6657273 | Termination for high voltage schottky diode A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ri... | 12/02/2003 |
| 6649995 | Semiconductor device and method of manufacturing the same A Schottky diode that achieves a predetermined reverse-direction breakdown voltage even if a state of a surface in a vicinity of a Schottky junction interface changes due to a welding of a bonding wire. The semiconductor device having the Schottky junctio... | 11/18/2003 |
| 6580141 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift... | 06/17/2003 |
| 6521961 | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-bar... | 02/18/2003 |
| 6501145 | Semiconductor component and method for producing the same The invention relates to a semiconductor component with adjacent Schottky (5) and pn (9) junctions positioned in a drift area (2, 10) of a semiconductor material. The invention also relates to a method for producing said semiconductor component.... | 12/31/2002 |
| 6501146 | Semiconductor device and method of manufacturing thereof A plurality of p anode regions are formed at one surface of an n- substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a mini... | 12/31/2002 |
| 6465874 | Power semiconductor rectifier having schottky contact combined with insulation film A semiconductor device has improved reverse recovery characteristics and has greatly reduced the leakage current caused during application of a reverse bias voltage. The semiconductor device according to the invention includes a semiconductor chip having ... | 10/15/2002 |
| 6462393 | Schottky device An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The l... | 10/08/2002 |
| 6441454 | Trenched Schottky rectifiers Inner trenches (11) of a trenched Schottky rectifier (1a; 1b; 1c; 1d) bound a plurality of rectifier areas (43a) where the Schottky electrode (3) forms a Schottky barrier 43 with a drift region (4). A perimeter trench (18) extends around the outer perimet... | 08/27/2002 |
| 6426541 | Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with sidewalls of the grooved surface and ohmic contacts with t... | 07/30/2002 |
| 6396084 | Structure of semiconductor rectifier A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of a second conductivity type laterally enclosing the current ... | 05/28/2002 |
