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| Number | Title | Issue Date |
| 8022496 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 09/20/2011 |
| 7936040 | Schottky barrier quantum well resonant tunneling transistor A semiconductor transistor device includes one or more conductive base regions, a first semiconductor barrier region, a second semiconductor barrier region, a conductive emitter region, and a conductive collector region. The first semiconductor barrier region or the... | 05/03/2011 |
| 7709923 | Metal-base nanowire transistor A metal-base transistor is suggested. The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode. The first electrode (2) is made from a semiconduction mat... | 05/04/2010 |
| 7656002 | Integrated bipolar transistor and field effect transistor The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. Th... | 02/02/2010 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7326996 | Semiconductor device and manufacturing process thereof The semiconductor device according to one of the aspects of the present invention includes a semiconductor substrate of a first conductivity type, having upper and lower surfaces. A collector region of a second conductivity type is formed on the lower surface of the... | 02/05/2008 |
| 7276771 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 10/02/2007 |
| 7187054 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 03/06/2007 |
| 7157785 | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the ... | 01/02/2007 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 6975013 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 12/13/2005 |
| 6963121 | Schottky-barrier tunneling transistor A three-terminal semiconductor transistor device comprises a base region formed by a semiconductor material of a first conductivity type at a first concentration, the base region being in contact with a first electrical terminal via a semiconductor material of the s... | 11/08/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6933751 | Integrated Schottky transistor logic configuration A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the Schottly diodes and transistor do not need to be isolated from one a... | 08/23/2005 |
| 6764918 | Structure and method of making a high performance semiconductor device having a narrow doping profile A structure and method of making an NPN heterojunction bipolar transistor (100) includes a semiconductor substrate (11) with a first region (82) containing a dopant (86) for forming a base region of the transistor. A second region (84 | 07/20/2004 |
| 6753580 | Diode with weak anode A diode is formed having a weak injection shallow, low P concentration anode in an N type wafer or die. The resulting diode has a soft reverse recovery characteristic with low recovery voltage and is particularly useful either as a power factor correction diode or a... | 06/22/2004 |
| 6744111 | Schottky-barrier tunneling transistor A three-terminal semiconductor transistor device comprises a semiconductor base region in contact with a first electric terminal, a conductive emitter region in contact with the semiconductor base region, forming a first Schottky barrier junction at the interface of... | 06/01/2004 |
| 6703283 | Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semi... | 03/09/2004 |
| 6674144 | Process for forming damascene-type isolation structure for integrated circuit Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon. Precise control over the thickness of the initially-formed diel... | 01/06/2004 |
| 6667557 | Method of forming an apparatus to reduce thermal fatigue stress on flip chip solder connections A method for providing a package for a semiconductor chip that minimizes stresses and strains that arise from differential thermal expansion on chip-to-substrate or chip-to-card interconnections. A collar element of one or more elements is provided. Adhes... | 12/23/2003 |
| 6633071 | Contact on a P-type region The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of said component, including, on the P region a layer of a plat... | 10/14/2003 |
| 6627970 | Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure An integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure is described. The antifuse structure is located within an insulated well composed of semiconductor material.... | 09/30/2003 |
| 6573582 | Semiconductor device A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolatin... | 06/03/2003 |
| 6521973 | Semiconductor device with integrated power transistor and suppression diode A semiconductor device comprises a semiconductor body (10) in and on which a power transistor (T; 1, 2, 3) and a suppression diode (D; 100) are integrated. A diode junction (40; 40') is present between the back metallization (22) and the adjacent region (... | 02/18/2003 |
| 6501145 | Semiconductor component and method for producing the same The invention relates to a semiconductor component with adjacent Schottky (5) and pn (9) junctions positioned in a drift area (2, 10) of a semiconductor material. The invention also relates to a method for producing said semiconductor component.... | 12/31/2002 |
| 6483164 | Schottky barrier diode A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound.... | 11/19/2002 |
| 6417554 | Latch free IGBT with schottky gate A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The... | 07/09/2002 |
| 6252282 | Semiconductor device with a bipolar transistor, and method of manufacturing such a device The invention relates to a semiconductor device including a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the... | 06/26/2001 |
| 6180987 | Integrated circuit transistor with low-resistivity source/drain structures at least partially recessed within a dielectric base layer A method for fabricating an integrated circuit is presented. In the method, a substrate is provided having a dielectric base layer formed thereupon. Source/drain trenches may be formed in the dielectric base layer. Source/drain structures containing metal... | 01/30/2001 |
| 6175143 | Schottky barrier A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring reg... | 01/16/2001 |
| 6097046 | Vertical field effect transistor and diode A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).... | 08/01/2000 |
| 5930636 | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector... | 07/27/1999 |
| 5907179 | Schottky diode assembly and production method A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a ... | 05/25/1999 |
| 5567969 | Compound modulated integrated transistor structure with reduced bipolar switch back effect Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field effect transistor pair, each including a source and a drain region with a gate contact positioned therebetween,... | 10/22/1996 |
| 5554877 | Compound semiconductor electroluminescent device An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, a... | 09/10/1996 |
| 5536966 | Retrograde NWell cathode Schottky transistor and fabrication process An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrat... | 07/16/1996 |
| 5504351 | Insulated gate semiconductor device A method of forming an insulated gate semiconductor device (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrod... | 04/02/1996 |
| 5478764 | Method of producing semiconductor device including Schottky barrier diode incorporating a CVD refractory metal layer A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second contact hole, on a (100) silicon semiconductor substrate; selec... | 12/26/1995 |
| 5469103 | Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a... | 11/21/1995 |
