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| Number | Title | Issue Date |
| 8178940 | Schottky barrier diode and method for using the same An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky e... | 05/15/2012 |
| 8013414 | Gallium nitride semiconductor device with improved forward conduction A gallium nitride based semiconductor diode includes a substrate, a semiconductor body including a first heavily doped GaN layer and a second lightly doped GaN layer. The semiconductor body includes mesas projecting upwardly from a lower surface where each of the me... | 09/06/2011 |
| 7999346 | Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 08/16/2011 |
| 7615839 | Semiconductor device and manufacturing method thereof Since VF and IR characteristics of a Schottky barrier diode are in a trade-off relationship, there has heretofore been a problem that an increase in a leak current is unavoidable in order to realize a low VF. Moreover, there has been a known structure which suppress... | 11/10/2009 |
| 7511352 | Rail Schottky device and method of making A monolithic three dimensional memory array comprising Schottky diodes components separated by antifuses is disclosed. The Schottky diodes are vertically oriented and disposed on alternating levels. Those on odd levels are “rightside-up” with antifuse over the m... | 03/31/2009 |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 7370492 | Chiller A chiller for a container such as a wine bottle is disclosed. The chiller includes an insulated reservoir. Located within the reservoir are one or more reusable cold storage packs, known as freezer bricks. The bricks define a cooling ring that conforms to the interi... | 05/13/2008 |
| 7355260 | Schottky device and method of forming A conductive layer includes a first portion that forms a Schottky region with an underlying first region having a first conductivity type. A second region of a second conductivity type underlies the first region, where the second conductivity type is opposite the fi... | 04/08/2008 |
| 7329937 | Asymmetric field effect transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 02/12/2008 |
| 7312510 | Device using ambipolar transport in SB-MOSFET and method for operating the same A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer;... | 12/25/2007 |
| 7282386 | Schottky device and method of forming A Schottky device having a plurality of unit cells, each having a Schottky contact portion, surrounded by a termination structure that causes depletion regions to form in a vertical and horizontal direction, relative to a surface of the device, during a reverse bias... | 10/16/2007 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7274083 | Semiconductor device with surge current protection and method of making the same A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and... | 09/25/2007 |
| 7268407 | Schottky barrier tunnel single electron transistor and method of manufacturing the same Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of... | 09/11/2007 |
| 7250666 | Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type... | 07/31/2007 |
| 7247913 | Semiconductor device having a Schottky source/drain transistor A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulatio... | 07/24/2007 |
| 7193973 | Data transmission apparatus and method A data transmission apparatus comprises an estimation device to estimate a transmission condition of the transmission channel in the transmitter based on at least Jitter information or a packet loss rate obtained from the receiver, and a controller to change at leas... | 03/20/2007 |
| 7190010 | Semiconductor device A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head por... | 03/13/2007 |
| 7176064 | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide A memory cell is formed of a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The suicide apparently p... | 02/13/2007 |
| 7136268 | Tunable ESD trigger and power clamp circuit A circuit and a method for the electrostatic discharge protection of integrated circuits. The electrostatic discharge protection circuit, including: an electrostatic discharge protection circuit, comprising: a first bipolar transistor coupled between a first circuit... | 11/14/2006 |
| 7135718 | Diode device and transistor device A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the ... | 11/14/2006 |
| 7116536 | Electrostatic discharge protection circuit An ESD protection circuit includes a detection circuit for detecting an ESD current and a bypass circuit for bypassing the ESD. The detection circuit and bypass circuit are connected to a first pad and a second pad. The bypass circuit is connected to an output termi... | 10/03/2006 |
| 7105907 | Gallium nitride compound semiconductor device having schottky contact A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and... | 09/12/2006 |
| 7092890 | Method for manufacturing thin GaAs die with copper-back metal structures A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner ... | 08/15/2006 |
| 7078782 | Semiconductor device To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first con... | 07/18/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 7071550 | Semiconductor module having heat sink serving as wiring line A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the... | 07/04/2006 |
| 7071526 | Semiconductor device having Schottky junction electrode A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a Schottky gate electrode 17 which is in contact with an AlGaN electro... | 07/04/2006 |
| 6992018 | Chemical fluid deposition for the formation of metal and metal alloy films on patterned and unpatterned substrates Methods are described for depositing a film or discontinuous layer of discrete clusters, of material (e.g., metals, metal mixtures or alloys, metal oxides, or semiconductors) on the surface of a substrate, e.g., a patterned silicon wafer, by i) dissolving a precurso... | 01/31/2006 |
| 6972470 | Dual metal Schottky diode An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode ... | 12/06/2005 |
| 6972440 | Enhanced T-gate structure for modulation doped field effect transistors A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of the T-gate. The spacer layers are thinner than the T-bar portion ove... | 12/06/2005 |
| 6969900 | Semiconductor diode capable of detecting hydrogen at high temperatures A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element... | 11/29/2005 |
| 6963121 | Schottky-barrier tunneling transistor A three-terminal semiconductor transistor device comprises a base region formed by a semiconductor material of a first conductivity type at a first concentration, the base region being in contact with a first electrical terminal via a semiconductor material of the s... | 11/08/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6949440 | Method of forming a varactor A method of forming a varactor includes forming an ion well of a first conductivity type on a substrate and a plurality of isolation structures on the ion well. The isolation structures define at least an active area on the ion well. Following that, ions of the firs... | 09/27/2005 |
| 6894360 | Electrostatic discharge protection of thin-film resonators A filter having a thin-film resonator fabricated on a semiconductor substrate and a method of making the same are disclosed. The filter has a bonding pad connected to the resonator and in contact with the substrate to form a Schottky diode with the substrate to prot... | 05/17/2005 |
| 6870243 | Thin GaAs die with copper back-metal structure A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner ... | 03/22/2005 |
| 6852615 | Ohmic contacts for high electron mobility transistors and a method of making the same A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HE... | 02/08/2005 |
