Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7851882 | Silicon carbide semiconductor device having junction barrier schottky diode A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive ... | 12/14/2010 |
| 7777292 | Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type having a top surface and a bottom surface, a semiconductor layer of a first conductivity type formed on the top surface of the semiconductor substrate, and having an active region... | 08/17/2010 |
| 7737522 | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction A Schottky diode includes at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein the trench is filled with a Schottky junction barrier metal. The Schottky diode further includes one or more dopant region of a... | 06/15/2010 |
| 7612426 | Schottky barrier diode and diode array A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottk... | 11/03/2009 |
| 7605441 | Semiconductor device A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic e... | 10/20/2009 |
| 7476956 | Gallium nitride based diodes with low forward voltage and low reverse current operation New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the F... | 01/13/2009 |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7391058 | Semiconductor devices and methods of making same A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, ... | 06/24/2008 |
| 7375407 | Schottky barrier diode and integrated circuit using the same A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance... | 05/20/2008 |
| 7348612 | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and ... | 03/25/2008 |
| 7304330 | Nitride semiconductor device A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum, boron and indium and V Group element consisting of at least nitrogen... | 12/04/2007 |
| 7294900 | Compound semiconductor device and manufacturing method thereof A pad electrode of a field effect transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode, and the pad electrode is directly contacted to a substrate. Predetermin... | 11/13/2007 |
| 7294860 | Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device l... | 11/13/2007 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7268407 | Schottky barrier tunnel single electron transistor and method of manufacturing the same Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of... | 09/11/2007 |
| 7242040 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,... | 07/10/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7220629 | Method of manufacturing an integrated circuit with multilength power transistor elements A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The firs... | 05/22/2007 |
| 7202528 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power... | 04/10/2007 |
| 7193291 | Organic Schottky diode An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as... | 03/20/2007 |
| 7141464 | Method of fabricating T-type gate Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the sec... | 11/28/2006 |
| 7135748 | Integrated circuit with multi-length output transistor segment A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The firs... | 11/14/2006 |
| 7119380 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,... | 10/10/2006 |
| 7105907 | Gallium nitride compound semiconductor device having schottky contact A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and... | 09/12/2006 |
| 7084475 | Lateral conduction Schottky diode with plural mesas A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the ... | 08/01/2006 |
| 7078781 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, first trenches formed on the surface thereof in a longitudinal plane shape and in parallel, a Schottky electrode formed thereon and sandwiched between adjacent first trench... | 07/18/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 6995396 | Semiconductor substrate, semiconductor device and method for fabricating the same A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow rate of 1 mL/min. at a substrate temperature of 1200° C. through 1600°... | 02/07/2006 |
| 6979863 | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky... | 12/27/2005 |
| 6969900 | Semiconductor diode capable of detecting hydrogen at high temperatures A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element... | 11/29/2005 |
| 6963121 | Schottky-barrier tunneling transistor A three-terminal semiconductor transistor device comprises a base region formed by a semiconductor material of a first conductivity type at a first concentration, the base region being in contact with a first electrical terminal via a semiconductor material of the s... | 11/08/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6921957 | Low forward voltage drop schottky barrier diode and manufacturing method therefor A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon t... | 07/26/2005 |
| 6906350 | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source, a drain and a gate. The gate is situated between the source and the drain... | 06/14/2005 |
| 6903433 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/07/2005 |
| 6861723 | Schottky diode having overcurrent protection and low reverse current The invention relates to a Schottky diode in which p-doped regions (4, 5) are incorporated in the Schottky contact area. At least one (5) of these regions (4, 5) has a greater minimum extent, in order to initiate a starting current. ... | 03/01/2005 |
| 6838744 | Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even wh... | 01/04/2005 |
| 6831345 | High withstand voltage semiconductor device A high withstand voltage semicnductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration semiconductor region thereof varies from the optimal level and/or influenced by... | 12/14/2004 |
| 6822307 | Semiconductor triode device having a compound-semiconductor channel layer A semiconductor triode comprises a gate electrode provided on a channel layer, wherein there is interposed an insulating metal oxide layer between a top surface of the channel layer and the gate electrode. ... | 11/23/2004 |
