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| Number | Title | Issue Date |
| 8183659 | Integrated circuits having interconnects and heat dissipators based on nanostructures The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices... | 05/22/2012 |
| 8178939 | Interfacial barrier for work function modification of high performance CMOS devices A semiconductor structure may include a semiconductor bulk region with a gate stack on the semiconductor bulk region. The source region and the drain region in the semiconductor bulk region may be located on opposing sides of a channel region below the gate stack. A... | 05/15/2012 |
| 8134219 | Schottky diodes Improved Schottky diodes with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path of a first conductivity type serially located between a first terminal comprising a Schottky contact and a second terminal. The... | 03/13/2012 |
| 8044485 | Semiconductor device A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction type, or combined type thereof having a main conduction pathway in th... | 10/25/2011 |
| 8026568 | Second Schottky contact metal layer to improve GaN Schottky diode performance A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins t... | 09/27/2011 |
| 8004058 | Schottky diode for high speed and radio frequency application A semiconductor diode that is disclosed. An exemplary semiconductor diode includes a portion of a semiconductor substrate including a first dopant, a first well with a Schottky region, and a second well with a second dopant; and an isolation region replacement eleme... | 08/23/2011 |
| 7999345 | Semiconductor device and manufacturing method thereof Provided is a technology, in a semiconductor device having a power MISFET and a Schottky barrier diode on one semiconductor substrate, capable of suppressing a drastic increase in the on-resistance of the power MISFET while making the avalanche breakdown voltage of ... | 08/16/2011 |
| 7977761 | Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device. ... | 07/12/2011 |
| 7964930 | Semiconductor device and method for manufacturing same A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same. ... | 06/21/2011 |
| 7939904 | Semiconductor device and method of manufacturing the same A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to form a Schottky junction, and an insulator. The insulator is in contact... | 05/10/2011 |
| 7915703 | Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same Fabrication of a Schottky diodes may include providing a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein on a first surface of a substrate. A diode contact is formed on a second surface of the substrat... | 03/29/2011 |
| 7851881 | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substr... | 12/14/2010 |
| 7777291 | Integrated circuits having interconnects and heat dissipators based on nanostructures The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices... | 08/17/2010 |
| 7768092 | Semiconductor device comprising a junction having a plurality of rings A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of ... | 08/03/2010 |
| 7759759 | Integrated circuit including a high voltage bipolar device and low voltage devices An integrated circuit includes a high voltage NPN bipolar transistor and a low voltage device. The NPN bipolar transistor includes a lightly doped p-well as the base region of the transistor while the low voltage devices are built using standard, more heavily doped ... | 07/20/2010 |
| 7759760 | Semiconductor switching element and semiconductor circuit apparatus A semiconductor switching element, wherein on a semiconductor layer formed on a substrate, or on a semiconductor substrate, a source electrode and a drain electrode are disposed at a predetermined interval in a direction along a surface of the substrate; and a secon... | 07/20/2010 |
| 7732887 | Schottky junction diode devices in CMOS A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material ... | 06/08/2010 |
| 7728402 | Semiconductor devices including schottky diodes with controlled breakdown A semiconductor device includes a semiconductor layer having a first conductivity type, a metal contact on the semiconductor layer and forming a Schottky junction with the semiconductor layer, and a semiconductor region in the semiconductor layer. The semiconductor ... | 06/01/2010 |
| 7696598 | Ultrafast recovery diode An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast reco... | 04/13/2010 |
| 7687876 | Controlled growth of a nanostructure on a substrate The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a fiel... | 03/30/2010 |
| 7671439 | Junction barrier Schottky (JBS) with floating islands A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semicon... | 03/02/2010 |
| 7649237 | Schottky diode for high speed and radio frequency application A semiconductor diode that eliminates leakage current and reduces parasitic resistance is disclosed. The semiconductor diode comprises a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate, wherein the semiconductor layer includes ... | 01/19/2010 |
| 7602036 | Trench type Schottky rectifier with oxide mass in trench bottom A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the to... | 10/13/2009 |
| 7528459 | Punch-through diode and method of processing the same A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped w... | 05/05/2009 |
| 7525171 | Semiconductor device and a method of manufacturing the same A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to form a Schottky junction, and an insulator. The insulator is in contact... | 04/28/2009 |
| 7518208 | Semiconductor device having power transistors and Schottky barrier diode A semiconductor device has a first region and a second region formed on a surface of a substrate. Plural first conductors and second conductors are formed in the first and second regions respectively. A first semiconductor region and a second semiconductor region ar... | 04/14/2009 |
| 7470967 | Self-aligned silicon carbide semiconductor devices and methods of making the same A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced ... | 12/30/2008 |
| 7432579 | Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer o... | 10/07/2008 |
| 7411218 | Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky con... | 08/12/2008 |
| 7405452 | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region m... | 07/29/2008 |
| 7405458 | Asymmetric field transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 07/29/2008 |
| 7397102 | Junction barrier schottky with low forward drop and improved reverse block voltage This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. ... | 07/08/2008 |
| 7391056 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/24/2008 |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 7385263 | Low resistance integrated MOS structure The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are pl... | 06/10/2008 |
| 7382035 | Schottky diode with low leakage current and fabrication method thereof A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor a... | 06/03/2008 |
| 7375407 | Schottky barrier diode and integrated circuit using the same A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance... | 05/20/2008 |
| 7359694 | Carbon nanotube devices and method of fabricating the same An RF mixer includes a diode quad including first, second, third and fourth carbon nanotube diodes, each carbon nanotube diode including a p-n junction The mixer also includes a RF input coupled each of the diodes, and a local oscillator input coupled with each of t... | 04/15/2008 |
| 7359672 | Apparatus and method for frequency conversion An apparatus for frequency up conversion and down conversion using frequency multiplier circuits. The frequency multiplier circuits receive a lower frequency signal and are operated in a forward direction to provide a higher frequency output. The same frequency mult... | 04/15/2008 |
| 7355260 | Schottky device and method of forming A conductive layer includes a first portion that forms a Schottky region with an underlying first region having a first conductivity type. A second region of a second conductivity type underlies the first region, where the second conductivity type is opposite the fi... | 04/08/2008 |
