Class 257/47 - In bipolar transistor structure

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the alloyed pn junction device is
No. of patents: 36
Last issue date: 01/04/2011

Number	Title	Issue Date
7863610	Integrated circuit including silicide region to inhibit parasitic currents An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first silicide region between the first diode and the second diode. ...	01/04/2011
7795614	Device with phase-separated dielectric structure An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration t...	09/14/2010
7598521	Semiconductor device in which the emitter resistance is reduced A semiconductor device includes a semiconductor chip having a collector region, a base region, and an emitter region that are formed in a semiconductor substrate. The semiconductor chip also includes a base electrode strip in contact with the base region, an emitter...	10/06/2009
7304334	Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided ...	12/04/2007
7271078	Method for fabricating semiconductor device and semiconductor device using the same A method for fabricating a semiconductor device improves off-state leakage current and junction capacitance characteristics in a pMOS transistor. The method includes forming a device isolation layer defining an active area in a semiconductor substrate; and forming a...	09/18/2007
7245139	Tester channel to multiple IC terminals A probe card provides signal paths between integrated circuit (IC) tester channels and probes accessing input and output pads of ICs to be tested. When a single tester channel is to access multiple (N) IC pads, the probe card provides a branching path linking the ch...	07/17/2007
7227264	Semiconductor device and method for manufacturing semiconductor device Single-crystalline silicon layers 7a and 7b are selectively formed on LDD layers 5a and 5b by an epitaxial growth method. Opening sections 10a and 10b are formed, which expose a sour...	06/05/2007
7173274	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe bas...	02/06/2007
7115465	Method for manufacturing a bipolar transistor A method for manufacturing a bipolar transistor, comprising the steps of: growing on the substrate a first semiconductor; depositing an encapsulation layer etchable with respect to the first semiconductor, forming a sacrificial blo...	10/03/2006
7008852	Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor m...	03/07/2006
6958491	Bipolar transistor test structure with lateral test probe pads Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads, transistor contacts and air...	10/25/2005
6949764	Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical ...	09/27/2005
6939771	Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor m...	09/06/2005
6936863	Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of...	08/30/2005
6917061	AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer ...	07/12/2005
6870184	Mechanically-stable BJT with reduced base-collector capacitance A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a co...	03/22/2005
6849871	Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical ...	02/01/2005
6831293	P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound semiconductor of a first conduction type, a light-emitting layer provided on the ...	12/14/2004
6809400	Composite pinin collector structure for heterojunction bipolar transistors This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables ...	10/26/2004
6774411	Bipolar transistor with reduced emitter to base capacitance According to a disclosed embodiment, a base region is grown on a transistor region. A dielectric layer is next deposited over the base region. The dielectric layer can comprise, for example, silicon dioxide, silicon nitride, or a suitable low-k dielectric. Subsequen...	08/10/2004
6727516	Semiconductor power conversion apparatus A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of t...	04/27/2004
6717177	Semiconductor power conversion apparatus A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of t...	04/06/2004
6677621	Light emitting device and electrical appliance There is provided a light emitting device which is bright and has low electric power consumption and high reliability. A triplet EL element 203 electrically connected to a current controlling TFT 102 is provided in a pixel portion 201. A luminescent mater...	01/13/2004
6569730	High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This...	05/27/2003
6545340	Semiconductor device A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The superlattice region 16 provides a non-linear response to a sufficientl...	04/08/2003
6465804	High power bipolar transistor with emitter current density limiter A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added to the layer struct...	10/15/2002
6465870	ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region A ESD (electrostatic discharge) robust SiGe bipolar transistor is provided which comprises a substrate of a first conductivity type; a doped subcollector region of a second conductivity type formed on the substrate, the doped subcollector region including...	10/15/2002
6396125	Semiconductor device A semiconductor device is formed of a casing, a semiconductor element disposed in the casing, and a control terminal assembly situated outside the casing. The control terminal assembly includes control terminals connected to the semiconductor element, and...	05/28/2002
6274921	Semiconductor integrated circuit including protective transistor protecting another transistor during processing A semiconductor integrated circuit has a protective NMOS transistor having a drain and a source respectively electrically connected to a first interconnection (electrically connected to a base electrode of a bipolar transistor or a gate electrode of a MOS...	08/14/2001
6208012	Zener zap diode and method of manufacturing the same The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention i...	03/27/2001
5369304	Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13,...	11/29/1994
5254485	Method for manufacturing bipolar semiconductor device There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the first conduction ty...	10/19/1993
5217909	Method for manufacturing a bipolar transistor A method for manufacturing a bipolar transistor in which the base, emitter and collector terminals are produced from a single, planar layer of, for example, polysilicon, directly deposited onto a substrate. The planar layer is doped by a first conductivit...	06/08/1993
4549196	Lateral bipolar transistor A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the sidewall of one groo...	10/22/1985
4032955	Deep diode transistor A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed in situ by the mi...	06/28/1977
3935587	High power, high frequency bipolar transistor with alloyed gold electrodes A bipolar transistor is provided with both high voltage and high frequency capabilities. A semiconductor body of a resistivity between 10 and 100 ohm-cm forms the collector region of the transistor and has an epitaxial semiconductor layer grown on a major...	01/27/1976

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Class 257/47 - In bipolar transistor structure