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| Number | Title | Issue Date |
| 8183658 | Field-effect transistor (FET) with embedded diode A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs a... | 05/22/2012 |
| 7737521 | Field effect power transistor A power transistor is disclosed. In one embodiment, the power transistor has a cell array including a semiconductor body having a plurality of transistor cells with gate electrodes and with body and source electrode regions and at least one temperature sensing devic... | 06/15/2010 |
| 7675134 | Temperature compensated work function based voltage reference A temperature compensated voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in... | 03/09/2010 |
| 7671438 | Solid-state imaging device A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-t... | 03/02/2010 |
| 7394139 | Optical modulator module package using flip-chip mounting technology Disclosed herein is an optical modulator module package using a flip-chip mounting technology, in which an optical modulator device is hermetically mounted using the flip-chip mounting technology. The optical modulator device is protected from an external environmen... | 07/01/2008 |
| 7348846 | Amplifier arrangement The present invention relates to an amplifier arrangement having a plurality of amplifier stages that form a series circuit. Each amplifier stage comprises a current mirror, the translation ratio of which defines the gain of the amplifier stage. Moreover, a current ... | 03/25/2008 |
| 7312509 | Digital temperature sensing device using temperature depending characteristic of contact resistance A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self... | 12/25/2007 |
| 7307328 | Semiconductor device with temperature sensor A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor ... | 12/11/2007 |
| 7242028 | Light emitting diode light source A light source that utilizes light emitting diodes that emit white light is disclosed. The diodes are mounted on an elongate member having at least two surfaces upon which the light emitting diodes are mounted. The elongate member is thermally conductive and is util... | 07/10/2007 |
| 7235436 | Method for doping structures in FinFET devices A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin... | 06/26/2007 |
| 7202532 | Integrated circuit An integrated circuit includes at least two circuit components formed on a common semiconductor substrate. Each circuit component has a self-contained supply voltage system. Coupling circuits couple the supply voltage systems for the at least two circuit components.... | 04/10/2007 |
| 7187034 | Distributed power MOSFET Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments. ... | 03/06/2007 |
| 7166900 | Semiconductor memory device A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor.... | 01/23/2007 |
| 7076870 | Manufacturing process for a surface-mount metal-cavity package for an oscillator crystal blank A surface-mount package for an oscillator crystal blank is made from a metal sheet substrate. Half-etched cavities are formed on one side of the sheet. The half-etched cavities are filled in with an insulator. The center of the insulator is drilled until metal is re... | 07/18/2006 |
| 7053463 | High-voltage integrated vertical resistor and manufacturing process thereof The manufacturing process comprises the steps of growing epitaxially a first layer from a semiconductor material substrate, forming in the first layer a first and a second buried region spaced from one another and having conductivity of the type opposite that of the... | 05/30/2006 |
| 7038297 | Semiconductor diffused resistors with optimized temperature dependence Ion implanted resistors formed in the body of a crystalline silicon substrate. The resistors have a different conductivity type from that of the silicon substrate. The sheet resistance and temperature dependence of the resistor layer is determined by the dose of the... | 05/02/2006 |
| 6972469 | Lateral PIN diode and method for processing same A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of... | 12/06/2005 |
| 6967537 | Surface-mount crystal oscillator having an opened portion of the sidewalls A surface-mounted crystal oscillator has a quartz crystal unit and a receptacle which is joined to the rear surface of the crystal unit for accommodating an IC (Integrated Circuit) chip. The receptacle has a bottom wall and sidewalls, and further, a concavity formed... | 11/22/2005 |
| 6963126 | Semiconductor device with under-fill material below a surface of a semiconductor chip AS conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconducto... | 11/08/2005 |
| 6948847 | Temperature sensor for a MOS circuit configuration A temperature sensor for a MOS circuit configuration is implemented as the gate of a MOS transistor and configured as a two-terminal network with a gate input and a gate output. By measuring the voltage drop across gate it is possible to determine the temperature at... | 09/27/2005 |
| 6946720 | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for ea... | 09/20/2005 |
| 6934209 | Temperature compensated T-RAM memory device and method A T-RAM memory cell includes a temperature compensation device to adjust the gate-to-source voltage of an access transistor for the memory cell as a function of temperature so that the sub-threshold current of the transistor is insensitive to temperature variations.... | 08/23/2005 |
| 6867470 | Multi-slope analog temperature sensor The present invention provides a temperature sensor that has high sensitivity and operates in a wide range of temperatures and VDD levels. The temperature sensor may be tailored to the application according to the conditions of temperature and VDD. The temperature s... | 03/15/2005 |
| 6825543 | Semiconductor device, method for manufacturing the same, and liquid jet apparatus A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transist... | 11/30/2004 |
| 6787929 | Semiconductor device having a flat protective adhesive sheet A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet... | 09/07/2004 |
| 6762474 | Method and apparatus for temperature compensation of read-only memory A method and apparatus for temperature compensation of a resistive based Read-Only Memory device is disclosed. In accordance with the method of the invention, the input voltage supplied to ROM device is adjusted in response to changes in temperature to maintain the ... | 07/13/2004 |
| 6720635 | Electronic component An electronic component includes a composite semiconductor substrate (110, 810) having a first side (111) opposite a second side (112), a semiconductor device (160, 170) at the first side of the composite semiconductor substrate, and a tr... | 04/13/2004 |
| 6667528 | Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternati... | 12/23/2003 |
| 6617659 | Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interi... | 09/09/2003 |
| 6605853 | Semiconductor device having heat protection circuits A semiconductor device has plural output circuits. Each of the plural output circuits has a semiconductor switching element and a heat protection circuit including a diode. When the heat protection circuit in a predetermined output circuit detects that he... | 08/12/2003 |
| 6548879 | Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interi... | 04/15/2003 |
| 6548840 | Monolithic temperature compensation scheme for field effect transistor integrated circuits A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (IC's) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. ... | 04/15/2003 |
| 6492709 | Arrangement for compensating for temperature dependent variations in surface resistance of a resistor on a chip To compensate for temperature dependent variations and process variations in surface resistance of a main resistor (R1) on a chip (1), one or more compensating resistors (R11, R12. . . R1n) can be connected in series with the first resistor (R1) via norma... | 12/10/2002 |
| 6337513 | Chip packaging system and method using deposited diamond film A chip packaging system and method for providing enhanced thermal cooling including a first embodiment wherein a diamond thin film is used to replace at least the surface layer of the existing packaging material in order to form a highly heat conductive p... | 01/08/2002 |
| 6303998 | Semiconductor device having a chip mounted on a rectangular substrate A semiconductor device 14 capable of reducing the warpage in a substrate is provided. A semiconductor chip 12 is mounted on a substrate 10 made of an electro-insulating material by flip-chip bonding, so that connector terminals formed on the substrate 10 ... | 10/16/2001 |
| 6274922 | Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the... | 08/14/2001 |
| 6255741 | Semiconductor device with a protective sheet to affix a semiconductor chip A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member... | 07/03/2001 |
| 6255677 | Chip-based analysis device comprising electrodes with localized heating The invention concerns an analysis device including at least one chip (110) equipped with a plurality of analysis electrodes (112). In accordance with the invention, the device also includes means of individual heating (150) of the analysis electrodes. Th... | 07/03/2001 |
| 6087703 | Photodetector and photodetection circuit A photodetector device for converting incident light to an electrical signal has two pn junctions or two MOS junctions fabricated in a silicon substrate. Preferably, a control terminal is provided between the two junctions. A photodetection circuit includ... | 07/11/2000 |
| 6037645 | Temperature calibration wafer for rapid thermal processing using thin-film thermocouples A thin-film thermocouple is provided which can be used at temperature of up to 900° C. The thin-film thermocouple includes: a silicon substrate; an SiO2 diffusion barrier layer formed on the substrate; a titanium oxide adhesion layer formed on... | 03/14/2000 |
