Class 257/468 - Semiconductor device operated at cryogenic temperature

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein means are provided to cool the device
No. of patents: 35
Last issue date: 06/24/2008

Number	Title	Issue Date
7391092	Integrated circuit including a temperature monitor element and thermal conducting layer In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided ...	06/24/2008
7351996	Method of increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi...	04/01/2008
7253396	Cooled photodetector Cooled photosensitive cell (80) comprising a table (50), sensors (66) which are fitted on the table, a screen (80) to prevent parasitic radiation on the sensors, and at least one Joule-Thomson cooler (41, 42) to cool the table and ...	08/07/2007
7211891	Electronic heat pump device, laser component, optical pickup and electronic equipment There is provided a small-size electronic heat pump device which is low in power consumption and which secures a vacuum gap without use of an additional circuit. The electronic heat pump device includes an emitter 1 and a collector 2. An electrically a...	05/01/2007
7106167	Stable high temperature sensor system with tungsten on AlN A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of o...	09/12/2006
7084495	Electroosmotic pumps using porous frits for cooling integrated circuit stacks A stack of heat generating integrated circuit chips may be provided with intervening cooling integrated circuit chips. The cooling integrated circuit chips may include microchannels for the flow of the cooling fluid. The cooling fluid may be pumped using the integra...	08/01/2006
7064414	Heater for annealing trapped charge in a semiconductor device A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heatin...	06/20/2006
6787929	Semiconductor device having a flat protective adhesive sheet A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet...	09/07/2004
6605868	Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer An insulating substrate (1) has insulative ceramic layers (2, 3) laid one upon another, an intermediate layer (4) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join t...	08/12/2003
6545334	Device and a method for thermal sensing A device for thermal sensing is disclosed based on only one thermopile. The cold junctions of said thermopile are coupled thermally to a first channel comprising a first substance while the hot junctions of said thermopile are coupled thermally to a secon...	04/08/2003
6255741	Semiconductor device with a protective sheet to affix a semiconductor chip A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member...	07/03/2001
6236098	Heat spreader An integrated circuit chip (10, 50, 100) may comprise an integrated circuit (14, 54, 108, 110, 112) formed in a semiconductor layer (12, 52, 102). A thermal contact (16, 56, 116) may be formed at a high temperature region of the integrated circuit (14, 54...	05/22/2001
6069395	Current leads adapted for use with superconducting coil and formed of functionally gradient material Current leads are used for connecting a power supply placed in a room-temature environment and a superconducting coil placed in an ultralow-temperature environment. The current leads includes a first current lead and a second current lead. The first curr...	05/30/2000
5949121	Temperature-indicating field effect transistor A temperature-indicating field effect transistor (100) includes a transistor die (101) including a drain (103), a source (105), and a gate (107). A temperature measurement device (109, 111) is thermally coupled to the transistor die (101) and electrically...	09/07/1999
5818097	Temperature controlling cryogenic package system A temperature controlled cryogenic package system for efficiently and precisely monitoring and controlling the operating temperature of a high temperature superconductor circuit placed on a substrate. The cryogenic package system comprises a heating eleme...	10/06/1998
5783854	Thermally isolated integrated circuit Thermally isolated circuit formed on a semiconductor on insulator structure includes a semiconductor surrounded by a semiconductor outer portion with an insulator therebetween. A cavity formed in the underlying semiconductor substrate opposite to the isla...	07/21/1998
5714791	On-chip Peltier cooling devices on a micromachined membrane structure This invention provides a Peltier cooling device generally useful in cooling electronic devices, especially those which are formed of high Tc superconducting materials. The Peltier device of the invention is formed on a micromachined membrane structure to...	02/03/1998
5619060	Thermal picture synthesizer device for generating a thermal image A thermal picture synthesis device (1) of multi-layer construction has a resistor element (3) spaced from a semi-conductor substrate layer (2). The resistor element (3) is made of titanium or Ni-chrome. A drive element layer (4) is provided either in or a...	04/08/1997
5444577	Impurity band optical filter An optical filter for an infrared detector is provided by creating an impurity band in a semiconductor substrate onto which the infrared detector is epitaxially grown. The impurity band provides a range of absorption and a long wavelength pass band charac...	08/22/1995
5362983	Thermoelectric conversion module with series connection In the conventional thermoelectric conversion module, P-type thermoelectric semiconductor chips and N-type thermoelectric semiconductor chips are alternately arranged in both the longitudinal and the transverse directions. Consequently, assembling work is...	11/08/1994
5168339	Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a str...	12/01/1992
5057877	Superconductor interconnection apparatus A structure connecting superconductor transmission lines to integrated circuits comprises a plurality of interconnection substrates having superconducting transmission path deposited thereon in contact with metallic contact areas, and integrated circuit c...	10/15/1991
4974062	Housing for opto-electronic components The invention relates to a housing for opto-electronic components having an integrated Joule-Thomson cooler, the housing including a lower section, a center section and an upper section intended for radiation intake. The invention provides for the housing...	11/27/1990
4949145	Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation In a homo-junction bipolar transistor suitable for a low temperature operation below 200°K. (particularly below 77 K), the maximum value of the impurity concentration of an intrinsic base region is set to be at least 1×1018 /cm3. T...	08/14/1990
4918505	Method of treating an integrated circuit to provide a temperature sensor that is integral therewith An integrated circuit is formed in a semiconductor die having a front face and a back face, the die having at least first and second functional regions. The first functional region comprises at least one zone of p-type material and at least one zone of n-...	04/17/1990
4857974	Circuit comprising conductive lines for the transfer of high-speed signals This circuit comprising conductive lines for the transfer of high-speed signals is formed from a semiconductor material in the presence of a two-dimensional gas 2DG between two of its layers (3 and 4). By a suitable choice of the conditions of the tempera...	08/15/1989
4843446	Superconducting photodetector A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of t...	06/27/1989
4739382	Package for a charge-coupled device with temperature dependent cooling A charge-coupled device package comprises a substrate of dielectric material and a charge-coupled device die mounted on one main face of the substrate. The substrate is placed in heat exchange relationship with a cold sink, such as a bath of LN2.	04/19/1988
4499482	Weak-source for cryogenic semiconductor device A two-gate field-effect transistor (FET) is designed to operate at cryogenic temperatures (circa 1°-20° K.). For an N channel FET, the low-concentration weak-P type material used for the channel region is built into an intrinsic (or near-intrinsic) laye...	02/12/1985
4488164	Quantized Hall effect switching devices A switching element (e.g., 30) is furnished by an inversion layer (e.g., 55) in a zero resistance state under the influence of a quantizing magnetic field, the inversion layer having a ring geometry. Voltage (e.g., Vo) applied across a pair of ...	12/11/1984
4472727	Carrier freezeout field-effect device A buried-channel MOSFET device 10 is cooled sufficiently to experience majority carrier freezeout in the channel region 30 (e.g. 10° k.). It is appropriately fabricated and biased to form a buried-channel 40. When the gate 26 is pulsed, there appears in ...	09/18/1984
4217547	Method for determining the compensation density in n-type narrow-gap semiconductors A method for determining the compensation density of narrow-gap semiconductors. Photo-excited carriers are generated by uniformily irradiating a sample with a laser pulse of a particular density and pulse width for a particular time length and at a low sa...	08/12/1980
4167791	Non-volatile information storage arrays of cryogenic pin diodes A semiconductor memory device exhibiting non-volatile storage characteristics is disclosed. The device comprises a storage element, maintained in a prescribed range of temperatures, which exhibits an effect of charge storage and release of the stored char...	09/11/1979
4127840	Solid state force transducer The limited temperature range for operation of conventional semiconductive force transducers is greatly extended in both directions, typically attaining a range from about 4° Kelvin to at least about 400° C. A piezoresistive strain gage is typically for...	11/28/1978
4081819	Mercury cadmium telluride device A mercury cadmium telluride semiconductor device includes an epitaxial layer of mercury cadmium telluride on a first substrate. A silicone rubber adhesive layer bonds the first substrate to a second substrate....	03/28/1978

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Class 257/468 - Semiconductor device operated at cryogenic temperature