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A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8039918 | Semiconductor photo detector A semiconductor photo detector is provided that includes a layer structure deposited over a semiconductor substrate, and having a second mesa formed on the semiconductor substrate and a first mesa formed on the second mesa, wherein an outer periphery of the second m... | 10/18/2011 |
| 8035187 | Semiconductor light receiving element and optical communication system The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductiv... | 10/11/2011 |
| 7888766 | Photodiode array and radiation detector having depressions of predetermined depth formed in regions corresponding to the regions where the photodiodes are formed in the semiconductor substrate A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposites surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A dep... | 02/15/2011 |
| 7868408 | Semiconductor light detecting element includes film which covers light receiving region near main surface of multilayer structure and electrode on main surface A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration... | 01/11/2011 |
| 7834413 | Semiconductor photodetector and method of manufacturing the same The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of ... | 11/16/2010 |
| 7821094 | Light emitting diode structure A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating t... | 10/26/2010 |
| 7804149 | Nanostructured ZnO electrodes for efficient dye sensitized solar cells The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, su... | 09/28/2010 |
| 7439599 | PIN photodiode structure and fabrication process for reducing dielectric delamination A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type elect... | 10/21/2008 |
| 7436030 | Strained MOSFETs on separated silicon layers A method of fabricating and a structure of an IC incorporating strained MOSFETs on separated silicon layers are disclosed. N-channel field effect transistors (nFET) and P-channel FETs (pFET) are formed on the separated silicon layers, respectively. Shallow trench in... | 10/14/2008 |
| 7427530 | Method of manufacturing photo diodes having a conductive plug contact to a buried layer Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first e... | 09/23/2008 |
| 7425751 | Method to reduce junction leakage current in strained silicon on silicon-germanium devices A MOSFET device in strained silicon-on-SiGe and a method of forming the device are described. The said device achieves reduced junction leakage due to the lower band-gap values of SiGe. The method consists of forming isolation trenches in a composite strained-Si/SiG... | 09/16/2008 |
| 7425745 | Semiconductor device and method for manufacturing the same A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film, a diffusion layer that is formed inside the semiconductor substrate ... | 09/16/2008 |
| 7408210 | Solid state image pickup device and camera An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor formed of a first diffusion layer, a second diffusion layer and a P w... | 08/05/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| RE40409 | Photoelectric converter having a light receiving portion with an improved readout gate A photoelectric converter with improved charge transfer efficiency from a light receiving portion. The photoelectric converter includes a light receiving portion having an output end and a gate portion having a first side and a second side that both define a readout... | 07/01/2008 |
| 7388270 | Method of fabricating CMOS image sensor A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The ... | 06/17/2008 |
| 7372123 | Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequen... | 05/13/2008 |
| 7365381 | Optical sensor with improved planarization In a photodetector where a circuit section, in which an interconnection is formed, is formed adjacent to a light receiving section, photo sensitivity within a light receiving surface is prevented from being non-uniform due to an interlayer insulating film at a perip... | 04/29/2008 |
| 7317236 | Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequen... | 01/08/2008 |
| 7314832 | Low temperature texturing layer to enhance adhesion of subsequent layers A method of forming a film on a substrate. In accordance with the invention, an adhesion layer is formed on the substrate. The adhesion layer is chemically bonded to the substrate and has a textured surface. The film is then formed on the textured surface of the adh... | 01/01/2008 |
| 7315560 | Apparatus, system, and method for junction isolation of arrays of surface emitting lasers An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array. ... | 01/01/2008 |
| 7307210 | Solar cell and method of producing the same In a solar cell, at least one of reinforcing material and buffering material is provided at least partially on at least one of a back surface, a front surface and a side surface of the solar cell. With these reinforcing material and/or buffering material, occurrence... | 12/11/2007 |
| 7305018 | Surface-emitting semiconductor laser array and optical transmission system using the same A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electr... | 12/04/2007 |
| 7305157 | Vertically-integrated waveguide photodetector apparatus and related coupling methods High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentia... | 12/04/2007 |
| 7291782 | Optoelectronic device and fabrication method Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architecte... | 11/06/2007 |
| 7259439 | Semiconductor photodetector and its production method In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2. An n-type GaAs layer 3, an i-type GaAs layer | 08/21/2007 |
| 7253493 | High density access transistor having increased channel width and methods of fabricating such devices A memory device having decreased cell size and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a ... | 08/07/2007 |
| 7253491 | Silicon light-receiving device A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelect... | 08/07/2007 |
| 7244998 | Light-emitting or light-receiving semiconductor module and method of its manufacture The present invention is a semiconductor module (20) in which, for example, twenty-five semiconductor devices (10) with a pnotoelectric conversion function are arranged in the form of a five row by five column matrix via an electrically conductive mech... | 07/17/2007 |
| 7233028 | Gallium nitride material devices and methods of forming the same The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), ligh... | 06/19/2007 |
| 7230315 | Integrated chemical microreactor with large area channels and manufacturing process thereof The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the chan... | 06/12/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7221030 | Semiconductor device A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in ... | 05/22/2007 |
| 7217883 | Manufacturing a solar cell with backside contacts A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone... | 05/15/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7211820 | Quantum well sensor having spatially separated sensing columns Quantum-well sensors having an array of spatially separated quantum-well columns formed on a substrate. A grating can be formed increase the coupling efficiency. ... | 05/01/2007 |
| 7202899 | Method to prevent white pixels in a CMOS image sensor A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is config... | 04/10/2007 |
| 7198972 | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. ... | 04/03/2007 |
| 7195532 | Process for manufacturing plasma display panel and substrate holder The invention relates to a process for manufacturing plasma display panel and a substrate holder, preventing an occurrence of dust giving an unfavorable effect in a forming process of a film on a substrate of a plasma display panel in a film forming apparatus. When ... | 03/27/2007 |
| 7183175 | Shallow trench isolation structure for strained Si on SiGe A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench... | 02/27/2007 |
