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| Number | Title | Issue Date |
| 8035186 | Low-noise semiconductor photodetectors A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read... | 10/11/2011 |
| 7880258 | Thin wafer detectors with improved radiation damage and crosstalk characteristics The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk... | 02/01/2011 |
| 7880259 | Solid-state image sensor A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate ... | 02/01/2011 |
| 7838957 | Semiconductor device having a plurality of photoelectric conversion elements, a transfer transistor, an amplifying transistor, a reset transistor, and a plurality of wirings defining an aperture of the photoelectric conversion elements A semiconductor device includes a plurality of photoelectric conversion elements arranged in a region. A transfer transistor transfers an electrical charge of the photoelectric conversion elements. An amplifying transistor reads out the electrical charge. A reset tr... | 11/23/2010 |
| 7442970 | Active photosensitive structure with buried depletion layer An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. Du... | 10/28/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
| 7345355 | Complementary junction-narrowing implants for ultra-shallow junctions Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two spec... | 03/18/2008 |
| 7329557 | Method of manufacturing solid-state imaging device with P-type diffusion layers A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of ... | 02/12/2008 |
| RE39967 | Solid-state photoelectric device A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first ... | 01/01/2008 |
| 7291782 | Optoelectronic device and fabrication method Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architecte... | 11/06/2007 |
| 7259412 | Solid state imaging device A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in th... | 08/21/2007 |
| 7256469 | Solid-state image pickup device A solid-state image pickup device 10 has an arrangement in which a second conductivity type semiconductor region 14 is formed on the surface of a first conductivity type electric charge accumulation region 13 of a light-receiving sensor portion,... | 08/14/2007 |
| 7250665 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 07/31/2007 |
| 7244998 | Light-emitting or light-receiving semiconductor module and method of its manufacture The present invention is a semiconductor module (20) in which, for example, twenty-five semiconductor devices (10) with a pnotoelectric conversion function are arranged in the form of a five row by five column matrix via an electrically conductive mech... | 07/17/2007 |
| 7235853 | Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film A fingerprint detection device has a fingerprint sensor chip and a diamond-like carbon (DLC) film covering the outermost surface of the sensor chip. The DLC film provides sufficient strength and enhanced electrostatic discharge withstand voltage to the fingerprint s... | 06/26/2007 |
| 7235831 | Light-receiving element and photoelectric conversion device In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provi... | 06/26/2007 |
| 7227177 | Doped semiconductor nanocrystals A particle, includes a semiconductor nanocrystal. The nanocrystal is doped. ... | 06/05/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7217883 | Manufacturing a solar cell with backside contacts A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone... | 05/15/2007 |
| 7205626 | Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties In a semiconductor module, twenty five semiconductor devices having light receiving properties, for example, are arranged in five by five matrices using a conductor mechanism formed from six lead frames Each column of semiconductor devices is connected in series and... | 04/17/2007 |
| 7170143 | Semiconductor photo-detection device and radiation apparatus On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent e... | 01/30/2007 |
| 7166880 | Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least... | 01/23/2007 |
| 7160753 | Silicon-on-insulator active pixel sensors Active pixel sensors are defined on double silicon on insulator (SOI) substrates such that a first silicon layer is selected to define radiation detection regions, and a second silicon layer is selected to define readout circuitry. The first and second silicon layer... | 01/09/2007 |
| 7157641 | Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface A bi-layer photovoltaic cell, and method (100) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound c... | 01/02/2007 |
| 7154137 | Image sensor and pixel having a non-convex photodiode In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater... | 12/26/2006 |
| RE39445 | Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier. ... | 12/26/2006 |
| 7154157 | Stacked semiconductor radiation sensors having color component and infrared sensing capability A radiation sensing structure includes red, green and blue photodiodes stacked Above an infrared radiation sensing photodiode. ... | 12/26/2006 |
| 7151305 | Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting... | 12/19/2006 |
| 7148551 | Semiconductor energy detector A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector i... | 12/12/2006 |
| 7126173 | Method for enhancing the electric connection between a power electronic device and its package An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate ... | 10/24/2006 |
| 7105373 | Vertical photodiode with heavily-doped regions of alternating conductivity types A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photon... | 09/12/2006 |
| 7098394 | Method and apparatus for powering circuitry with on-chip solar cells within a common substrate A system and method for providing power to a light-powered transponder. In order to create a sufficient voltage differential, two different photovoltaic elements are used. The photovoltaic elements generate voltages of different polarities. Because the photovoltaic ... | 08/29/2006 |
| 7095091 | Packaging stacked chips with finger structure An improved finger structure applied to a packaging stack structure. The packaging stack structure is composed of several layers of chips, each chip is formed several leading wires and several finger sets are connected to the leading wire. Several finger units are f... | 08/22/2006 |
| 7087833 | Nanostructure and nanocomposite based compositions and photovoltaic devices Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostruc... | 08/08/2006 |
| 7087832 | Nanostructure and nanocomposite based compositions and photovoltaic devices Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostruc... | 08/08/2006 |
| 7084443 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 08/01/2006 |
| 7081584 | Solar based electrical energy generation with spectral cooling Method and system for converting solar energy into electrical energy utilizing serially coupled multijunction-type photovoltaic cells in conjunction with a form of spectral cooling. The latter cooling is carried out by removing ineffective solar energy components fr... | 07/25/2006 |
| 7067895 | Color imager cell with transistors formed under the photodiodes An imaging cell and a method of forming the imaging cell are disclosed. The imaging cell includes a first transistor that has source, a drain, and a gate, and a second transistor that has a source, a drain, and a gate connected to the source of the first transistor.... | 06/27/2006 |
