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| Number | Title | Issue Date |
| 8084838 | Large-area PIN diode with reduced capacitance The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks inte... | 12/27/2011 |
| 8039917 | Photodiode and photo IC using same A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-conc... | 10/18/2011 |
| 7888765 | Optical semiconductor device An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collect... | 02/15/2011 |
| 7671437 | Photogate stack with nitride insulating cap over conductive layer A photogate structure having increased quantum efficiency, especially for low wavelength light such as blue light. The photogate is formed of a thin conductive layer, such as a layer of doped polysilicon. A nitride insulating cap is formed over the conductive layer.... | 03/02/2010 |
| 7626241 | Thin film interference ripple reduction A thin film structure for an optical sensor to achieve a wavelength window with nearly ripple free reflection and transmission has different areas of thin film with two or more different thicknesses. ... | 12/01/2009 |
| 7402886 | Memory with self-aligned trenches for narrow gap isolation regions Self-aligned trench filling is used to isolate devices in high-density integrated circuits. A deep, narrow trench isolation region is formed in a substrate between devices. The trench region includes two trench portions. A first trench portion, located above a secon... | 07/22/2008 |
| 7400022 | Photoreceiver cell with color separation A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning an... | 07/15/2008 |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
| RE39967 | Solid-state photoelectric device A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first ... | 01/01/2008 |
| 7307210 | Solar cell and method of producing the same In a solar cell, at least one of reinforcing material and buffering material is provided at least partially on at least one of a back surface, a front surface and a side surface of the solar cell. With these reinforcing material and/or buffering material, occurrence... | 12/11/2007 |
| 7291782 | Optoelectronic device and fabrication method Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architecte... | 11/06/2007 |
| 7265431 | Imageable bottom anti-reflective coating for high resolution lithography A semiconductor wafer may be coated with an imageable anti-reflective coating. As a result, the coating may be removed using the same techniques used to remove overlying photoresists. This may overcome the difficulty of etching anti-reflective coatings using standar... | 09/04/2007 |
| 7250665 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 07/31/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7220982 | Amorphous carbon-based non-volatile memory A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode. ... | 05/22/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7187050 | Optical sensor and method of manufacturing the same A cubic element of photonic crystal is integrally formed on the surface of a photo-detection element, and a portion of the photonic crystal cubic element is irradiated with ultraviolet rays thereby to change the refractive index of the portion of the cubic element t... | 03/06/2007 |
| 7157641 | Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface A bi-layer photovoltaic cell, and method (100) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound c... | 01/02/2007 |
| 7154137 | Image sensor and pixel having a non-convex photodiode In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater... | 12/26/2006 |
| 7151305 | Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting... | 12/19/2006 |
| 7121743 | Optical module The optical module includes a housing, an optical subassembly, a support and a thermal sheet. The housing has a base and a cover. The support having two leg portions and a bridge connecting these leg portions is placed on the bottom surface of the base. The optical ... | 10/17/2006 |
| 7122733 | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds The present invention provides a solar cell comprising a substrate, a first buffer layer disposed above the base layer, a second buffer layer disposed above the first buffer layer, a first boron compound layer disposed above the second buffer layer, a second boron c... | 10/17/2006 |
| 7071524 | Semiconductor light receiving device for repeatedly propagating incident light in light absorption layer and method for manufacturing the same A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. ... | 07/04/2006 |
| 7064263 | Stacked photovoltaic device A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer ... | 06/20/2006 |
| 7057256 | Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction w... | 06/06/2006 |
| 7057255 | Photodiode, optical receiver device including the same, and method of making the photodiode A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer compos... | 06/06/2006 |
| 7053294 | Thin-film solar cell fabricated on a flexible metallic substrate A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flex... | 05/30/2006 |
| 7045205 | Device based on coated nanoporous structure A nanostructured apparatus may include a mesoporous template having an array of regularly-spaced pores. One or more layers of material may conformally coat the walls to a substantially uniform thickness. Such an apparatus can be used in a variety of devices includin... | 05/16/2006 |
| 7026702 | Memory device Systems and methodologies for fabrication of a memory cell or array are disclosed. The memory cell employs a functional zone with passive and active layers. Such passive and active layers facilitate electron migration, and allow a plurality of states for the memory ... | 04/11/2006 |
| 7022997 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 04/04/2006 |
| 7002156 | Detection system including avalanche photodiode for use in harsh environments A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrat... | 02/21/2006 |
| 6995444 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes Photodetector device comprising a semiconductor substrate (1) of a first type of conductivity connected to a first electrode (2). Said substrate comprises an active area (4) made up of different semiconductor regions of a second type of conducti... | 02/07/2006 |
| 6963120 | Photovoltaic element A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction... | 11/08/2005 |
| 6949809 | Light receiving element, light detector with built-in circuitry and optical pickup A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor ... | 09/27/2005 |
| 6946597 | Photovoltaic devices fabricated by growth from porous template Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture where two more materials having different electron affinities are regularly arrayed such that their presence alternates withi... | 09/20/2005 |
| 6933585 | Color image sensor on transparent substrate and method for making same The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor. The image sensor comprises a transparent substrate (40) on the upper part of which are superimposed, successivel... | 08/23/2005 |
| 6933436 | Photovoltaic cell A photovoltaic cell is described, having a photoactive layer (4) made of two molecular components, namely an electron donor and an electron acceptor, particularly a conjugated polymer component and a fullerene component, and having two metallic electrodes ( | 08/23/2005 |
| 6930330 | Silicon optoelectronic device and light emitting apparatus using the same A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate a... | 08/16/2005 |
| 6909161 | Photodiode A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between W... | 06/21/2005 |