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| Number | Title | Issue Date |
| 8084837 | Solid-state image pickup device In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type region 750 and an n+ type region 760) and th... | 12/27/2011 |
| 8063466 | Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the ... | 11/22/2011 |
| 7948050 | Core-shell nanowire transistor A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor c... | 05/24/2011 |
| 7884439 | Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction w... | 02/08/2011 |
| 7701030 | Pinned photodiode with high storage capacity, method of manufacture and image sensor incorporating same In a photodiode formed by a region of a first type inside a region of a second type, of a semiconductor substrate, the region of the first type includes a first zone including a dopant of the first type having a first concentration and a first depth. The region of t... | 04/20/2010 |
| 7504702 | Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction w... | 03/17/2009 |
| 7432578 | CMOS image sensor with enhanced photosensitivity A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate a... | 10/07/2008 |
| 7394141 | Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in t... | 07/01/2008 |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| 7345355 | Complementary junction-narrowing implants for ultra-shallow junctions Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two spec... | 03/18/2008 |
| 7329557 | Method of manufacturing solid-state imaging device with P-type diffusion layers A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of ... | 02/12/2008 |
| 7297590 | Method for fabricating an integrated pin diode and associated circuit arrangement A method for producing an integrated PIN photodiode. The PIN photodiode contains a doped region of a first conduction type near the substrate and a doped region that is remote from the substrate. The doped region that is remote from the substrate has a different con... | 11/20/2007 |
| 7256470 | Photodiode with controlled current leakage The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiod... | 08/14/2007 |
| 7250665 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 07/31/2007 |
| 7217982 | Photodiode having voltage tunable spectral response A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of elect... | 05/15/2007 |
| 7205627 | Image sensor cells A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping pola... | 04/17/2007 |
| 7205593 | MOS image pick-up device and camera incorporating the same A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semicon... | 04/17/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7199412 | Image sensor with surface regions of different doping A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conducti... | 04/03/2007 |
| 7187052 | Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes ... | 03/06/2007 |
| 7176532 | CMOS active pixel sensor with improved dark current and sensitivity An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+ region is formed extending from within the P wel... | 02/13/2007 |
| 7164164 | Display device and photoelectric conversion device A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements in... | 01/16/2007 |
| 7164447 | Solid state image pickup device A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial se... | 01/16/2007 |
| 7151305 | Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting... | 12/19/2006 |
| 7148528 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 12/12/2006 |
| 7132724 | Complete-charge-transfer vertical color filter detector A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor stru... | 11/07/2006 |
| 7126052 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of ... | 10/24/2006 |
| 7121743 | Optical module The optical module includes a housing, an optical subassembly, a support and a thermal sheet. The housing has a base and a cover. The support having two leg portions and a bridge connecting these leg portions is placed on the bottom surface of the base. The optical ... | 10/17/2006 |
| 7122734 | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice... | 10/17/2006 |
| 7115925 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 10/03/2006 |
| 7105373 | Vertical photodiode with heavily-doped regions of alternating conductivity types A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photon... | 09/12/2006 |
| 7078741 | Enhanced photodetector The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particu... | 07/18/2006 |
| 7057256 | Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction w... | 06/06/2006 |
| 7034347 | Charge detecting device There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting dev... | 04/25/2006 |
| 7022968 | Optical sensor that measures the light output by the combustion chamber of an internal combustion engine An optical sensor provides information about the burn of the fuel mixture in the combustion chamber of an internal combustion engine as well as the timing and waveform of the spark that ignites the fuel mixture in the combustion chamber. The optical sensor can be im... | 04/04/2006 |
| 7009185 | Ultraviolet detector and manufacture method thereof The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technol... | 03/07/2006 |
| 7002156 | Detection system including avalanche photodiode for use in harsh environments A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrat... | 02/21/2006 |
| 6995444 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes Photodetector device comprising a semiconductor substrate (1) of a first type of conductivity connected to a first electrode (2). Said substrate comprises an active area (4) made up of different semiconductor regions of a second type of conducti... | 02/07/2006 |
