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| Number | Title | Issue Date |
| 8044483 | Photo detector and optically interconnected LSI A photo detector having an electrically conductive thin film and a light-receiving unit. A coupling periodic structure is provided on a surface of the film and converts incidence light to surface plasmon. The coupling periodic structure has an opening that penetrate... | 10/25/2011 |
| 8044484 | Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction t... | 10/25/2011 |
| 8026566 | Semiconductor device and method for manufacturing semiconductor device A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil,... | 09/27/2011 |
| 8026565 | Thin film semiconductor device comprising nanocrystalline silicon powder A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are prin... | 09/27/2011 |
| 7977760 | Photoelectric conversion device, its manufacturing method, and image pickup device A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate... | 07/12/2011 |
| 7915702 | Reduced pixel area image sensor An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one ... | 03/29/2011 |
| 7859077 | Semiconductor device A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light t... | 12/28/2010 |
| 7843030 | Method, apparatus, material, and system of using a high gain avalanche photodetector transistor Here, we demonstrate new material/structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The... | 11/30/2010 |
| 7843031 | Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction t... | 11/30/2010 |
| 7816755 | Photoelectric conversion device with isolation arrangement that reduces pixel space without reducing resolution or sensitivity A pixel space is narrowed without increasing PN junction capacitance. A photoelectric conversion device includes a plurality of pixels arranged therein, each including a first impurity region of a first conductivity type forming a photoelectric conversion region, a ... | 10/19/2010 |
| 7701029 | Solid-state image pickup device In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type region 750 and an n+ type region 760) and th... | 04/20/2010 |
| 7696597 | Split transfer gate for dark current suppression in an imager pixel A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a cha... | 04/13/2010 |
| 7687875 | Image sensors including photoelectric converting units having multiple impurity regions An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor... | 03/30/2010 |
| 7615838 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same. In one example embodiment, a CMOS image sensor includes a field region and an active region, a second conductive bottom region, a first conductive well region, a second conductive top region, and a first c... | 11/10/2009 |
| 7605440 | Pixel cell isolation of charge storage and floating diffusion regions using doped wells A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is i... | 10/20/2009 |
| 7592682 | Optical waveguide and photoreceptor A semiconductor device having a substrate that contains an insulating layer and a semiconductor layer provided on the insulating layer. The semiconductor also has an optical waveguide that is formed along a predetermined path. This optical waveguide is formed by mak... | 09/22/2009 |
| 7586172 | Blooming control method for a photodiode and corresponding integrated circuit The photodiode comprises an upper pn junction (D1) formed between an upper layer and an intermediate layer supported by one portion of a semiconductor substrate. A lower junction is formed between the intermediate layer and the substrate portion. The forward ... | 09/08/2009 |
| 7582945 | Photo thin film transistor having photoconductive layer including chalcogenide element and unit cell of image sensor using the same A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST incl... | 09/01/2009 |
| 7508047 | Vertical cavity surface emitting laser with integrated electrostatic discharge protection An electrostatic discharge (ESD) protected semiconductor device. The semiconductor device is formed as a monolithic structure. The monolithic structure includes a vertical cavity surface emitting laser (VCSEL) and a protection diode. The protection diode cathode is ... | 03/24/2009 |
| 7466003 | Solid state image pickup device, camera, and driving method of solid state image pickup device A solid state image pickup device that can properly widen a dynamic range is provided. Carriers that have overflowed from photodiodes (1003a to 1003c) to lateral overflow regions (1010a to 1010c) and carriers a... | 12/16/2008 |
| 7439558 | Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base re... | 10/21/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432540 | Dual conversion gain gate and capacitor combination A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the... | 10/07/2008 |
| 7432530 | Solid-state imaging device and method of manufacturing same A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided... | 10/07/2008 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7417272 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 08/26/2008 |
| 7408210 | Solid state image pickup device and camera An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor formed of a first diffusion layer, a second diffusion layer and a P w... | 08/05/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 Ī¼m into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7385238 | Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ... | 06/10/2008 |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7385270 | Semiconductor device and manufacturing method thereof A solid-state imaging device achieving a global shutter of images and its manufacturing method are disclosed. According to one aspect of the present invention, it is provided a solid-state imaging device comprising an optical signal storage region provided in a semi... | 06/10/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
| 7382011 | Solid-state image sensing device equipped with inner lens A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one princip... | 06/03/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7361527 | Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semi... | 04/22/2008 |
| 7361877 | Pinned-photodiode pixel with global shutter An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage regi... | 04/22/2008 |
| 7351997 | Single photon receptor A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconduct... | 04/01/2008 |
| 7352042 | Radiation-emitting semiconductor device and method of manufacturing such a device The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a bas... | 04/01/2008 |
| 7348228 | Deep buried channel junction field effect transistor (DBCJFET) A junction field effect transistor (JFET) is fashioned where a channel of transistor is buried deeply within the workpiece within which the JFET is formed. Burying the channel below the surface of the workpiece and/or away from overlying conductive materials distanc... | 03/25/2008 |
