Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 8188562 | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer... | 05/29/2012 |
| 8138568 | Transparent carbon nanotube electrode using conductive dispersant and production method thereof Disclosed is a transparent carbon nanotube (CNT) electrode using a conductive dispersant° The transparent CNT electrode comprises a transparent substrate and a CNT thin film formed on a surface the transparent substrate wherein the CNT thin film is formed of a CNT ... | 03/20/2012 |
| 8129813 | Optoelectronic sensor and device for 3D distance measurement The present invention relates to an optoelectronic sensor for 5 demodulating a modulated photon flux (50), and to a measuring device, in particular for 3D distance measurement, having at least one optoelectronic sensor of this type. The optoelectronic sensor ... | 03/06/2012 |
| 8080857 | Semiconductor photodetecting device and illuminance sensor The present invention provides a semiconductor photodetecting device that suppresses sensitivity of a short wavelength component of irradiated light as well as a long wavelength component thereof and has a spectral sensitivity characteristic approximately coincident... | 12/20/2011 |
| 8049294 | Front side illuminated, back-side contact double-sided PN-junction photodiode arrays The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high sp... | 11/01/2011 |
| 8030729 | Device for absorbing or emitting light and methods of making the same A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a... | 10/04/2011 |
| 8022495 | PIN diode structure with zinc diffusion region A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island sha... | 09/20/2011 |
| 7948049 | Photodiode and photodiode array with improved performance characteristics The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark c... | 05/24/2011 |
| 7948048 | Semiconductor device and method for manufacturing same In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivit... | 05/24/2011 |
| 7898055 | Photodiode with controlled current leakage The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiod... | 03/01/2011 |
| 7888764 | Three-dimensional integrated circuit structure A semiconductor structure includes an interconnect region and a semiconductor stack bonded to the interconnect region through a bonding region. The stack includes at least two semiconductor layers having different electrical properties. The stack also includes singl... | 02/15/2011 |
| 7843029 | Semiconductor range-finding element and solid-state imaging device A semiconductor range-finding element and a solid-state imaging device, which can provide a smaller dark current and a removal of reset noise. With n-type buried charge-generation region, buried charge-transfer regions, buried charge read-out regions buried in a sur... | 11/30/2010 |
| 7834412 | Low dark current image sensors by substrate engineering Image sensors and the manufacture of image sensors having low dark current. A SiGe or Ge layer is selectively grown on the silicon substrate of the sensing area using an epitaxial chemical vapor deposition (CVD) method. After the SiGe or Ge growth, a silicon layer m... | 11/16/2010 |
| 7821093 | Solid-state imaging device with biased light shielding film A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover a... | 10/26/2010 |
| 7800194 | Thin film photodetector, method and system A photodetector, comprises a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and ther... | 09/21/2010 |
| 7741691 | Semiconductor photodetector A semiconductor photodetector includes a semiconductor substrate of a first conductivity type, a light absorption layer of the first conductivity type on the semiconductor substrate and absorbing light, a diffraction grating layer on the light absorption layer and i... | 06/22/2010 |
| 7709921 | Photodiode and photodiode array with improved performance characteristics The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark c... | 05/04/2010 |
| 7696596 | Bipolar junction transistor and CMOS image sensor having the same Embodiments relate to a horizontal type bipolar junction transistor element (BJT) and a CMOS image sensor having the same to form a photodiode. In embodiments, the bipolar junction transistor as well as collector current may flow uniformly in a horizontal direction,... | 04/13/2010 |
| 7663202 | Nanowire photodiodes and methods of making nanowire photodiodes Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the fi... | 02/16/2010 |
| 7656001 | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high sp... | 02/02/2010 |
| 7608906 | Simultaneous unipolar multispectral integrated technology (SUMIT) detectors A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-ty... | 10/27/2009 |
| 7608905 | Independently addressable interdigitated nanowires An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically isolated from nanowires of other sets. ... | 10/27/2009 |
| 7579668 | Method for photo-detecting and apparatus for the same A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signa... | 08/25/2009 |
| 7545016 | Integrated layer stack arrangement, optical sensor and method for producing an integrated layer stack arrangement An integrated layer stack arrangement, an optical sensor and a method for producing an integrated layer stack arrangement is disclosed. Generally, an integrated layer stack arrangement includes a plurality of layer stacks arranged on top of each other, each layer st... | 06/09/2009 |
| 7541659 | Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semicon... | 06/02/2009 |
| 7470966 | Photodiode with controlled current leakage The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiod... | 12/30/2008 |
| 7439597 | Poly diode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 10/21/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432530 | Solid-state imaging device and method of manufacturing same A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided... | 10/07/2008 |
| 7432578 | CMOS image sensor with enhanced photosensitivity A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate a... | 10/07/2008 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7417272 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 08/26/2008 |
| 7411265 | Photodiode and phototransistor A phototransistor includes a first-conduction-type lower region, a second-conduction-type upper region disposed on the first region, a second-conduction-type electrode contact region of a high concentration disposed at a surface inside of the upper region and is con... | 08/12/2008 |
| 7411232 | Semiconductor photodetecting device and method of manufacturing the same A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an ep... | 08/12/2008 |
| 7400022 | Photoreceiver cell with color separation A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning an... | 07/15/2008 |
| 7397076 | CMOS image sensor with dark current reduction Disclosed are a CMOS image sensor and a fabrication method thereof, which is adequate to reduce dark current. The CMOS image sensor comprises a device isolation region and an active region, which are formed on a semiconductor substrate; a photocharge generating port... | 07/08/2008 |
| 7394141 | Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in t... | 07/01/2008 |
| 7385238 | Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ... | 06/10/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
