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| Number | Title | Issue Date |
| 8124970 | Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof A phase change memory device having buried conduction lines directly underneath phase change memory cells is presented. The phase change memory device includes buried conduction lines buried in a semiconductor substrate and phase change memory cells arranged on top ... | 02/28/2012 |
| 8120023 | Low crosstalk, front-side illuminated, back-side contact photodiode array The present invention is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined ... | 02/21/2012 |
| 8076672 | Passivation structure with voltage equalizing loops A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first closed loop, a continuous strip that loops around the first closed loop... | 12/13/2011 |
| 7943928 | ESD protection structures for semiconductor components An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of t... | 05/17/2011 |
| 7723723 | Memory A memory allowing reduction of a memory cell size is obtained. This memory comprises a first conductive type first impurity region formed on the main surface of a semiconductor substrate for functioning as a first electrode of a diode included in a memory cell and a... | 05/25/2010 |
| 7605397 | Capacitive bypass An indirect connection to and across a photodiode array. The backside contact is used as one portion which connects to a capacitor. The capacitor forms a shunt across the bulk substrate, thus shunting across the series resistance of the substrate, and reducing the s... | 10/20/2009 |
| 7589348 | Thermal tunneling gap diode with integrated spacers and vacuum seal A thermionic or thermotunneling gap diode device consisting of two silicon electrodes maintained at a desired distance from one another by means of spacers. These spacers are formed by oxidizing one electrode, protecting certain oxidized areas and removing the remai... | 09/15/2009 |
| 7352617 | Nano tube cell and memory device using the same A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano tube cell comprising a capacitor and a PNPN nano tube switch which does... | 04/01/2008 |
| 7329915 | Rectifying contact to an n-type oxide material or a substantially insulating oxide material A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 ... | 02/12/2008 |
| 7319250 | Semiconductor component and method for producing the same A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination... | 01/15/2008 |
| 7298645 | Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub cell arrays, a main bit line... | 11/20/2007 |
| 7295586 | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs GaAs(1−x)Sbx layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH3 (or TBAs) are used to fabri... | 11/13/2007 |
| 7237429 | Continuous-range hydrogen sensors The present invention provides for novel hydrogen sensors and methods for making same. In some embodiments, such novel hydrogen sensors are continuous-range hydrogen sensors comprising Pd—Ag nanoparticles arrayed as nanowires or two-dimensional shapes on a resisti... | 07/03/2007 |
| 7205591 | Pixel sensor cell having reduced pinning layer barrier potential and method thereof A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer... | 04/17/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7186621 | Method of forming a negative differential resistance device A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a variety of NDR characteristics for an NDR element, such as peak-to-val... | 03/06/2007 |
| 7173843 | Serial diode cell and nonvolatile memory device using the same A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The ferroelectric capacitor, loc... | 02/06/2007 |
| 7170111 | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one... | 01/30/2007 |
| 7145187 | Substrate independent multiple input bi-directional ESD protection structure In a multiple input ESD protection structure, the inputs are isolated from the substrate by highly doped regions of opposite polarity to the input regions. Dual polarity is achieved by providing a symmetrical structure with n+ and p+ regions forming each dual polari... | 12/05/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7110291 | Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub cell arrays, a main bit line... | 09/19/2006 |
| 7105866 | Heterojunction tunneling diodes and process for fabricating same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the ... | 09/12/2006 |
| 7084437 | Semiconductor device Provided is an MRAM memory cell structure capable of preventing generation of parasitic transistors. Diodes are adopted as switching elements of an MRAM memory cell. An n-type semiconductor layer and a p-type semiconductor layer, which collectively constitute a diod... | 08/01/2006 |
| 7053404 | Active semiconductor component with an optimized surface area A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-section with an undulated closed ... | 05/30/2006 |
| 7034331 | Material systems for semiconductor tunnel-junction structures The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor m... | 04/25/2006 |
| 7034328 | Vertical geometry InGaN LED A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quant... | 04/25/2006 |
| 7030428 | Strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such a... | 04/18/2006 |
| 7026645 | Leak detection method and micro-machined device assembly The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that... | 04/11/2006 |
| 7016392 | GaAs-based long-wavelength laser incorporating tunnel junction structure The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-t... | 03/21/2006 |
| 7009866 | Nonvolatile memory device using serial diode cell A nonvolatile memory device features a serial diode cell by effectively arranging a cross point cell array including a nonvolatile ferroelectric capacitor and a serial PN diode chain to reduce the whole memory size. A serial diode cell array including a nonvolatile ... | 03/07/2006 |
| 7006545 | Semiconductor laser device and optical fiber amplifier using the same A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 μm is disclosed, wherein the active layer includes a doped region ... | 02/28/2006 |
| 6965626 | Single mode VCSEL A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) t... | 11/15/2005 |
| 6949774 | Gallium nitride based diodes with low forward voltage and low reverse current operation New Group III based diodes are disclosed having a low on state voltage (Vf), and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the ... | 09/27/2005 |
| 6936860 | Light emitting diode having an insulating substrate An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on ... | 08/30/2005 |
| 6921925 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 07/26/2005 |
| 6855975 | Thin film diode integrated with chalcogenide memory cell An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive p... | 02/15/2005 |
| 6822258 | Self-organized nanometer interface structure and its applications in electronic and opto-electronic devices A self-organized nanometer interface structure is disclosed. During the reactive sputtering process, the chemical dynamics difference among reactants induces self-organization to form a special nanometer interface structure. The nanometer interface structure natural... | 11/23/2004 |
| 6690030 | Semiconductor device with negative differential resistance characteristics A gate oxide film formed on the surface of a silicon substrate is partly reduced in thickness or "thinned" at its specified part overlying a source region. In a gate region, a multilayer structure is formed which includes a first polycrystalline silicon o... | 02/10/2004 |
| 6661074 | Receiver comprising a variable capacitance diode A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate.... | 12/09/2003 |
| 6507043 | Epitaxially-grown backward diode A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped la... | 01/14/2003 |
