Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 8115269 | Integrated circuit package having reduced interconnects A technique for making an integrated circuit package. Specifically, a stacked memory device is provided with minimal interconnects. Memory die are stacked on top of each other and electrically coupled to a substrate. Thru vias are provided in the substrate and/or me... | 02/14/2012 |
| 8110887 | Photodetector and display device provided with the same Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate (20) including a transparency base sub... | 02/07/2012 |
| 8080856 | Photoelectric structure and method of manufacturing thereof A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The fr... | 12/20/2011 |
| 8030727 | Image sensor and method for manufacturing the same An image sensor includes a semiconductor substrate, an interconnection and an interlayer dielectric, an image sensing device, a trench, a buffer layer, a barrier pattern, a via hole, and a metal contact. The semiconductor substrate includes a readout circuitry. The ... | 10/04/2011 |
| 8022494 | Photodetector and manufacturing method thereof A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, an... | 09/20/2011 |
| 7994602 | Titanium dioxide thin film systems A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a single-phase anatase structure. The titanium dioxide layer is directly disposed on a substrate comprised of glass,... | 08/09/2011 |
| 7986022 | Semispherical integrated circuit structures A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A lay... | 07/26/2011 |
| 7952159 | Photo sensor and flat display panel A photo sensor includes a patterned shielding conductive layer disposed on a transparent substrate, and a buffer dielectric layer, a patterned semiconductor layer, and a dielectric layer disposed on the patterned shielding layer in order. The patterned semiconductor... | 05/31/2011 |
| 7936037 | Photoelectric conversion device and manufacturing method of the same, and a semiconductor device A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode... | 05/03/2011 |
| 7936038 | Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped fi... | 05/03/2011 |
| 7932576 | Transparent conductive layer and method of manufacturing the same A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which expos... | 04/26/2011 |
| 7928529 | Semiconductor device A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is for... | 04/19/2011 |
| 7888761 | Direct electron detector An electron detector (30) for detection of electrons comprises a semiconductor wafer (11) having a central portion (12) with a thickness of at most 150 μm, preferably at most 100 μm, formed by etching an area of a thicker wafer. On opposite si... | 02/15/2011 |
| 7875949 | Image sensor device with submicron structure An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel region and at least one integrated circuit in the substrate of the pixel region. A photodiode is disposed on the substrate of the pixel region, comprising a lower elect... | 01/25/2011 |
| 7872325 | Reduced-crosstalk wirebonding in an optical communication system Wirebonds are formed to couple an opto-electronic device chip having two or more opto-electronic devices to a signal processing chip. Two or more mutually adjacent wirebond groups, each corresponding to one of the opto-electronic devices, are formed. For example, ea... | 01/18/2011 |
| 7863704 | Systems and methods for biasing high fill-factor sensor arrays and the like A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semicond... | 01/04/2011 |
| 7863703 | Systems and methods for biasing high fill-factor sensor arrays and the like A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semicond... | 01/04/2011 |
| 7847364 | Flexible photo-detectors Apparatus including flexible line extending along a length. Flexible line includes first charge carrier-transporting body, photosensitive body over first charge carrier-transporting body, and second charge carrier-transporting body over photosensitive body. Each of ... | 12/07/2010 |
| 7786545 | Image sensor and method for manufacturing the same Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a substrate provided with a transistor circuit, first and second interconnections separated from each other on the substrate, a first conductive-type conductive layer fo... | 08/31/2010 |
| 7786544 | Area sensor and display apparatus provided with an area sensor An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon ... | 08/31/2010 |
| 7777290 | PIN diodes for photodetection and high-speed, high-resolution image sensing The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layer... | 08/17/2010 |
| 7772667 | Photoelectric conversion device and semiconductor device The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first co... | 08/10/2010 |
| 7759757 | Electro-optical device and electronic apparatus An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode forme... | 07/20/2010 |
| 7755157 | Photovoltaic device and manufacturing method of photovoltaic device Solar cells and methods of their manufacture are described that exhibit decreased or eliminated leak current, improved open voltage and improved fill factor characteristics. In an embodiment, a separate processed surface is interposed between a first and a second ma... | 07/13/2010 |
| 7741690 | Photoelectric conversion device and photodetector apparatus having the same A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the ... | 06/22/2010 |
| 7732886 | Pin photodiode structure A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region. ... | 06/08/2010 |
| 7719075 | Scanning head for optical position-measuring systems A scanning head for an optical position-measuring system includes a receiver grating, formed of photosensitive areas, for the scanning of locally intensity-modulated light of differing wavelengths. The receiver grating is formed from a semiconductor layer stack of a... | 05/18/2010 |
| 7701028 | Image sensor with large-area, high-sensitivity and high-speed pixels The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isola... | 04/20/2010 |
| 7696593 | PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconducto... | 04/13/2010 |
| 7692261 | Optical sensor element and method for driving the same An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity conce... | 04/06/2010 |
| 7687874 | Surface illuminated photodiode and optical receiver module In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the h... | 03/30/2010 |
| 7649236 | Semiconductor photodetector and photodetecting device having layers with specific crystal orientations A semiconductor photodetector 10 has a first semiconductor substrate 1 that is of a first conductive type and a low resistivity and has a (111) front surface, and a second semiconductor substrate 2 that is of the first conductive type and... | 01/19/2010 |
| 7619293 | Pin photodiode with improved blue light sensitivity In a laser pickup photodetector of an optical disk playback device, the sensitivity to blue light is improved. On a main surface of a semiconductor substrate, a high resistivity epitaxial layer that becomes an i layer of a PIN photodiode (PIN-PD) is formed. On a sur... | 11/17/2009 |
| 7595541 | Photo detector and method for forming thereof A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a... | 09/29/2009 |
| 7573114 | Electronic device including a gated diode An electronic device can include a gated diode, wherein the gated diode includes a junction diode structure including a junction. A first conductive member spaced apart from and adjacent to the junction can be connected to a first signal line. A second conductive me... | 08/11/2009 |
| 7560791 | Front lit PIN/NIP diode having a continuous anode/cathode A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proxi... | 07/14/2009 |
| 7538406 | Ambient light sensor utilizing combination of filter layer and absoprtion layer to achieve similar sensitivity to the light as the human eye An ambient light sensor includes a substrate, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer for absorbing the visible light, and a filter layer formed on the absorption layer for filtering infrared light and high-energy photo... | 05/26/2009 |
| 7535074 | Monolithically integrated vertical pin photodiode used in biCMOS technology The invention relates to a monolithically integrated vertical pin photodiode which is produced according to BiCMOS technology and comprises a planar surface facing the light and a rear face and anode connections located across p areas on a top face of the photodiode... | 05/19/2009 |
| 7528458 | Photodiode having increased proportion of light-sensitive area to light-insensitive area A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a s... | 05/05/2009 |
| 7525170 | Pillar P-i-n semiconductor diodes An arrangement of pillar shaped p-i-n diodes having a high aspect ration are formed on a semiconductor substrate. Each device is formed by an intrinsic or lightly doped region (i-region) positioned between a P+ region and an N+ region at each end of the pillar. The ... | 04/28/2009 |
