Class 257/456 - Silicide of refractory metal

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the Schottky layer comprises a silicide
No. of patents: 24
Last issue date: 11/22/2011

Number	Title	Issue Date
8063464	Photo detector and method for forming thereof A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a...	11/22/2011
7602035	Light emitting or light receiving semiconductor module and method for manufacturing same A solar module 20 comprises first and second sheets 21 and 22, a plurality of rows (a plurality of groups) of spherical solar cells 11 incorporated in between these sheets 21 and 22 in a state in which the conduction directi...	10/13/2009
7420215	Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ...	09/02/2008
7368760	Low parasitic capacitance Schottky diode A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the S...	05/06/2008
7176537	High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav...	02/13/2007
7038277	Transferable device-containing layer for silicon-on-insulator applications A method for forming an integrated circuit on an insulating substrate is described comprising the steps of forming a semiconductor layer on a seed wafer substrate containing an at least partially crystalline porous release layer, processing the semiconductor layer t...	05/02/2006
6982467	Semiconductor device and method of manufacturing the same A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielect...	01/03/2006
6846729	Process for counter doping N-type silicon in Schottky device Ti silicide barrier A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dos...	01/25/2005
6798034	Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi...	09/28/2004
6756651	CMOS-compatible metal-semiconductor-metal photodetector A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The...	06/29/2004
6744105	Memory array having shallow bit line with silicide contact portion and method of formation A core memory array having a plurality of charge trapping dielectric memory devices. The core memory array can include a substrate having a first semiconductor bit line and a second semiconductor bit line formed therein and a body region interposed between the first...	06/01/2004
6720627	Semiconductor device having junction depths for reducing short channel effect A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and sil...	04/13/2004
6696739	High efficient pn junction solar cell A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rea...	02/24/2004
6608360	One-chip micro-integrated optoelectronic sensor This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate ...	08/19/2003
6262485	Using implants to lower anneal temperatures A method for lowering the anneal temperature required to form a multi-component material, such as refractory metal silicide. A shallow layer of titanium is implanted in the bottom of the contact area after the contact area is defined. Titanium is then dep...	07/17/2001
5710447	Solid state image device having a transparent Schottky electrode Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impu...	01/20/1998
5449924	Photodiode having a Schottky barrier formed on the lower metallic electrode A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina fil...	09/12/1995
5365054	Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially gro...	11/15/1994
4829173	Radiation detecting apparatus A semiconductor photodetector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi2, disposed therein. The rods form Schottky barrier...	05/09/1989
4794438	Semiconductor radiation detecting device A semiconductor radiation detector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi2, disposed therein. The rods form Schottky ba...	12/27/1988
4782377	Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhe...	11/01/1988
4763176	Metal-semiconductor-metal schottky photodiode A metal-semiconductor-metal photodiode comprises a semiconductor layer and a cathode electrode and an anode electrode which are formed on the semiconductor layer and are made of such mutually different electrode materials that the cathode electrode has a ...	08/09/1988
4628339	Polycrystalline silicon Schottky diode array A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read...	12/09/1986
4544939	Schottky-barrier diode radiant energy detector with extended longer wavelength response The upper limit of longer wavelength response of a radiation detector using a Schottky-barrier diode operated in hot carrier mode is extended by a layer of relatively high concentration impurities ion implanted in Schottky barrier contact surface of the s...	10/01/1985

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Class 257/456 - Silicide of refractory metal