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| Number | Title | Issue Date |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7329927 | Integrated circuit devices having uniform silicide junctions Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes... | 02/12/2008 |
| 7176537 | High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav... | 02/13/2007 |
| 7075158 | Semiconductor device and method of manufacturing the same A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielect... | 07/11/2006 |
| 7026701 | Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati... | 04/11/2006 |
| 6982467 | Semiconductor device and method of manufacturing the same A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielect... | 01/03/2006 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
| 6846731 | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substr... | 01/25/2005 |
| 6798034 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 09/28/2004 |
| 6756651 | CMOS-compatible metal-semiconductor-metal photodetector A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The... | 06/29/2004 |
| 6608360 | One-chip micro-integrated optoelectronic sensor This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate ... | 08/19/2003 |
| 6597050 | Method of contacting a silicide-based schottky diode and diode so formed A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of th... | 07/22/2003 |
| 6211560 | Voltage tunable schottky diode photoemissive infrared detector PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ra... | 04/03/2001 |
| 5710447 | Solid state image device having a transparent Schottky electrode Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impu... | 01/20/1998 |
| 5648297 | Long-wavelength PTSI infrared detectors and method of fabrication thereof Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The e... | 07/15/1997 |
| 5648667 | Image pickup device with and image pickup method by use of two-dimensionally arranged sensors having sensitivities different in certain direction of arrangement Photo-sensing elements are arranged in a form of a matrix, with photo-sensing characteristics substantially equal with each other in a row direction, but different therebetween in a column direction. Vertical charge transfer circuits receive charge signal... | 07/15/1997 |
| 5598016 | Back-illuminated type photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that... | 01/28/1997 |
| 5565676 | Method of driving photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that... | 10/15/1996 |
| 5488231 | Metal/semiconductor junction Schottky diode optical device using a distortion grown layer A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is form... | 01/30/1996 |
| 5471072 | Platinum and platinum silicide contacts on ଲ-silicon carbide Gold, which is the commonly used metallization on ଲ-silicon carbide, is known to degrade at temperatures above 450° C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with platinum metallization have rectifying characteristics ... | 11/28/1995 |
| 5359213 | Charge transfer device and solid state image sensor using the same A charge transfer device and a solid state image sensor using the same, capable of transferring signal charge at a high signal to noise ratio (S/N ratio) and preventing an occurrence of dark current. They include a double-layered charge transfer path stru... | 10/25/1994 |
| 5326996 | Charge skimming and variable integration time in focal plane arrays Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays formed in a silicon substrate. The present invention provides for pulsing a field plate that lies over a diode disposed in the substrate in order to... | 07/05/1994 |
| 5285098 | Structure and method internal photoemission detection A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact r... | 02/08/1994 |
| 5163179 | Platinum silicide infrared diode Platinum Silicide (PtSi) layers formed on silicon substrates are well known for their ability to image in the infrared portion of the electromagnetic spectrum out to 5.75 micrometers. The detectors are formed on p-type silicon substrates of orientat... | 11/10/1992 |
| 5122669 | Wideband schottky focal plane array A radiation detector includes a silicon substrate (12) having opposing first and second major surfaces, the substrate absorbing visible radiation incident upon the first major surface and passing into the substrate for generating charge carriers therefrom... | 06/16/1992 |
| 5001530 | Infrared Schottky junction charge coupled device A Schottky barrier CCD infra-red (IR) detector array having Schottky junction IR sensitive gates as the transfer gates of the CCD array. These Schottky gates perform both IR detection and CCD shift register function within the array, thereby improving the... | 03/19/1991 |
| 4982246 | Schottky photodiode with silicide layer A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous s... | 01/01/1991 |
| 4939561 | Infrared sensor An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-X GeX epitaxial layer grown on a p-type substrate, wherein the chara... | 07/03/1990 |
| 4910570 | Photo-detector for ultraviolet and process for its production A semiconductor photo-detector is disclosed. The inventive photo-detector is especially sensitive to light in the ultraviolet and/or blue portions of the spectrum. The semiconductor body comprising the detector is arranged with a band structure which, thr... | 03/20/1990 |
| 4881110 | Double-Schottky diode liquid crystal light valve A double Schottky diode light valve (5) includes a liquid crystal (80) for locally modulating a beam (120) by polarization rotation to produce a modulated beam (121), and a photoconductor (40) located adjacent the liquid crystal (80) for receiving and abs... | 11/14/1989 |
| 4876586 | Grooved Schottky barrier photodiode for infrared sensing A sensor optimized for detecting infrared radiation is formed by a Schottky barrier photodiode having a corrugated upper surface upon which a thin layer of metal silicide is deposited. The corrugated surface is formed by selective etching of a (100) silic... | 10/24/1989 |
| 4864378 | Schottky barrier infrared detector A method and resultant device is described for fabricating iridium silicide Schottky IR detectors in which a thin intermediate film of platinum is formed between the conventional iridium outer layer over a p-type silicon substrate with or without an n-typ... | 09/05/1989 |
| 4857979 | Platinum silicide imager The fill factor in a Pt:Si imager is greatly improved by (1) biasing the reflector plate as a field plate to eliminate the need for an N- guard ring along the edges of the imaging diodes; (2) reconfiguring the meander channel to use a single me... | 08/15/1989 |
| 4672412 | High fill-factor ac-coupled x-y addressable Schottky photodiode array Each unit cell of a Schottky barrier photodiode imaging array comprises a Schottky metal electrode formed on a silicon substrate. The Schottky electrode is reverse biased with a pulse for beginning a sensing interval, following which the change in charge ... | 06/09/1987 |
| 4651001 | Visible/infrared imaging device with stacked cell structure A solid-state image sensing device such as an IT-CCD has first and second photosensing sections which are stacked so that they separately sense visible and infrared image light components contained in input light. The visible image light component contain... | 03/17/1987 |
| 4638345 | IR imaging array and method of making same An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier... | 01/20/1987 |
| 4620231 | CCD imager with photodetector bias introduced via the CCD register An infrared charge-coupled-device (IR-CCD) imager uses an array of Schottky-barrier diodes (SBD's) as photosensing elements and uses a charge-coupled-device (CCD) for arranging charge samples supplied in parallel from the array of SBD's into a succession ... | 10/28/1986 |
| 4586069 | Opto-electrical device made of silicon for detecting infrared light An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p+ -silicon with a doping d... | 04/29/1986 |
| 4544939 | Schottky-barrier diode radiant energy detector with extended longer wavelength response The upper limit of longer wavelength response of a radiation detector using a Schottky-barrier diode operated in hot carrier mode is extended by a layer of relatively high concentration impurities ion implanted in Schottky barrier contact surface of the s... | 10/01/1985 |
| 4533933 | Schottky barrier infrared detector and process A Schottky barrier diode formed of iridium-silicon material having a frequency response encompassing the 3.0 to 5.0 micrometer infrared band. The bandwidth, uniformity of response and silicon base material of such diodes renders them ideally suited for us... | 08/06/1985 |
