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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 8174089 | High voltage switching devices and process for forming same The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low do... | 05/08/2012 |
| 8035185 | Electrode, method of making same, photoelectric transfer element, method of manufacturing same, electronic device and method of manufacturing same An electrode is composed of a carbon carrying a metal and a binder polymer, and it is used as a counter electrode of a dye-sensitized solar cell. The metal carried by carbon is at least one kind of metal selected from the group consisting of Pt, Ru, Co, Ti, Ni, Al a... | 10/11/2011 |
| 7939902 | Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effe... | 05/10/2011 |
| 7768091 | Diamond ultraviolet sensor In a conventional ultraviolet sensing device using a diamond semiconductor in a light-receiving unit, an Au-based electrode material is used for both a rectifier electrode and an ohmic electrode. However, the Au-based electrode material has fatal defects, such as po... | 08/03/2010 |
| 7432577 | Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation A semiconductor component for detecting electromagnetic radiation includes a contact between a metal and a semiconductor. The semiconductor has at least one metal-chalcogenide compound semiconductor as an optical absorbing material or is configured completely from s... | 10/07/2008 |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 7327911 | Optical detector configuration and utilization as feedback control in monolithic integrated optic and electronic arrangements An improvement in the reliability and lifetime of SOI-based opto-electronic systems is provided through the use of a monolithic opto-electronic feedback arrangement that monitors one or more optical signals within the opto-electronic system and provides an electrica... | 02/05/2008 |
| 7326945 | Dose transfer standard detector for a lithography tool A dose transfer standard detector measures radiation intensity and dose in a lithography tool. The lithography tool may be an Extreme Ultraviolet lithography (EUVL) tool. The dose transfer standard detector may transmit intensity and dose data to a computer, which a... | 02/05/2008 |
| 7294898 | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effe... | 11/13/2007 |
| 7291544 | Homoepitaxial gallium nitride based photodetector and method of producing A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104... | 11/06/2007 |
| 7279765 | Transparent electrode made from indium-zinc-oxide and etchant for etching the same A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZ... | 10/09/2007 |
| 7262434 | Semiconductor device with a silicon carbide substrate and ohmic metal layer A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 08/28/2007 |
| 7217584 | Bonded thin-film structures for optical modulators and methods of manufacture The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched betwee... | 05/15/2007 |
| 7196790 | Multiple wavelength spectrometer Multiple wavelength spectrometers can be tuned to particular wavelengths. A dual wavelength spectrometer can include a spectrometer configured to detect at least some wavelengths that fall within the ultraviolet (UV) spectrum and a spectrometer configured to detect ... | 03/27/2007 |
| 7184122 | Lithographic apparatus and device manufacturing method In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be ... | 02/27/2007 |
| 7180094 | Nitride-based light emitting device and method of manufacturing the same Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. ... | 02/20/2007 |
| 7176537 | High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav... | 02/13/2007 |
| 7177489 | Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched betwee... | 02/13/2007 |
| 7149388 | Low loss contact structures for silicon based optical modulators and methods of manufacture The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched betwee... | 12/12/2006 |
| 7145165 | Tunable laser fluid sensor A sensitive fluid sensor for detecting fluids and particularly trace fluids. The sensor may be adjustable for detecting fluids of various absorption lines. To effect such adjustment, a tunable laser may be used. The laser may be an edge emitting diode, a VCSEL or ot... | 12/05/2006 |
| 7087834 | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and... | 08/08/2006 |
| 7078259 | Method for integrating thermistor A structure and method are provided for forming a thermistor. Isolation structures are formed in a substrate including at least an upper layer of a single crystal semiconductor. A layer of salicide precursor is deposited over the isolation region and the upper layer... | 07/18/2006 |
| 7012314 | Semiconductor devices with reduced active region defects and unique contacting schemes A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; ... | 03/14/2006 |
| 6998690 | Gallium nitride based III-V group compound semiconductor device and method of producing the same A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed o... | 02/14/2006 |
| 6956163 | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and... | 10/18/2005 |
| 6946717 | High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup... | 09/20/2005 |
| 6852615 | Ohmic contacts for high electron mobility transistors and a method of making the same A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HE... | 02/08/2005 |
| 6831309 | Unipolar photodiode having a schottky junction contact A unipolar photodiode and methods of making and using employ a Schottky contact as a cathode contact. The Schottky cathode contact is created directly on a carrier traveling or collector layer of the unipolar photodiode resulting in a simpler overall structure to us... | 12/14/2004 |
| 6798034 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 09/28/2004 |
| 6774449 | Semiconductor device and method for fabricating the same The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon. ... | 08/10/2004 |
| 6774300 | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and... | 08/10/2004 |
| 6756651 | CMOS-compatible metal-semiconductor-metal photodetector A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The... | 06/29/2004 |
| 6680432 | Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and... | 01/20/2004 |
| 6657518 | Notch filter circuit apparatus According to one embodiment of the invention, a notch filter circuit includes a coplanar waveguide that includes a silicon substrate and at least one shunt stub bent at an angle to the coplanar waveguide. The notch filter circuit also includes at least on... | 12/02/2003 |
| 6608360 | One-chip micro-integrated optoelectronic sensor This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate ... | 08/19/2003 |
| 6608362 | Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components A method of fabricating high quality passive components having reduced capacitive and magnetic effects by using a Schottky diode underlying the passive components in the manufacture of integrated circuits is described. A Schottky diode is formed completel... | 08/19/2003 |
| 6597050 | Method of contacting a silicide-based schottky diode and diode so formed A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of th... | 07/22/2003 |
| 6483164 | Schottky barrier diode A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound.... | 11/19/2002 |
| 6107652 | Metal-semiconductor-metal photodetector A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping pl... | 08/22/2000 |
