Class 257/450 - With doping profile to adjust barrier height

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the height of the Schottky barrier
No. of patents: 29
Last issue date: 09/02/2008

Number	Title	Issue Date
7420215	Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ...	09/02/2008
7332782	Dye-sensitized solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6...	02/19/2008
7332785	Dye-sensitized solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6...	02/19/2008
7312507	Sensitizing dye solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6...	12/25/2007
7217982	Photodiode having voltage tunable spectral response A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of elect...	05/15/2007
7187052	Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes ...	03/06/2007
7087501	Manufacture of probe unit having lead probes extending beyond edge of substrate A sacrificial layer is formed in a recess of a substrate, and leads extending from the substrate into an area of the sacrificial layer are formed. A cut is formed from the bottom surface of the substrate, the cut extending from the bottom surface to the area of the ...	08/08/2006
7053293	GaAs substrate with Sb buffering for high in devices GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed. ...	05/30/2006
7012314	Semiconductor devices with reduced active region defects and unique contacting schemes A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; ...	03/14/2006
6683326	Semiconductor photodiode and an optical receiver The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive ...	01/27/2004
6545331	Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus Disclosed is a solid state imaging device, comprising: a photodetection diode; and an insulated gate field effect transistor provided adjacent to the photodetection diode for optical signal detection. In this case, a carrier pocket is provided in a second...	04/08/2003
6225670	Detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector The present invention discloses a semiconductor based detector for radiation with a small but effective barrier between the radiation sensitive volume in the semiconductor and the regions and junctions with readout circuitry, and with no or a lower barrie...	05/01/2001
6146957	Method of manufacturing a semiconductor device having a buried region with higher impurity concentration Since the PN junction of a photodiode is formed of a silicon substrate having a low impurity concentration and an epitaxial layer, the width of the depletion layer in the PN junction is formed wider, the parasitic capacitance by the junction capacitance i...	11/14/2000
6107652	Metal-semiconductor-metal photodetector A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping pl...	08/22/2000
6107643	Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof A photoconductive switch, having at least a part of a first layer doped with dopants providing substantially no free charge carriers for charge transport between the electrodes at the normal operation temperature of the switch, has the nature of the dopin...	08/22/2000
5814873	Schottky barrier infrared sensor A solid-state infrared sensor using a Schottky barrier diode. The sensor has a first layer of a semiconductor of a first conductivity type and a second layer of a metal or a metal silicide and the first and second layer are joined to each other to form th...	09/29/1998
5796155	Schottky barrier infrared detector array with increased effective fill factor An improvement of the design of Schottky barrier infrared detector (SBIR) arrays, as taught by Roosild, et al. We describe modifications of the detector unit cell design which maximize the fraction of detector electrode area exhibiting full spectral emiss...	08/18/1998
5747840	Photodiode with improved photoresponse behavior The quantum efficiency of a photodiode is substantially increased by forming the photodiode on a heavily-doped layer of semiconductor material which, in turn, is formed on a semiconductor substrate. The heavily-doped layer of semiconductor material tends ...	05/05/1998
5539221	Staircase avalanche photodiode An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGax Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic...	07/23/1996
5155565	Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate A thin film p-i-n solar cell and Schottky barrier diode are fabricated adjacent one another on a common flexible polyimide substrate. A titanium nitride diffusion barrier prevents contaminants of an aluminum contact layer on the substrate from reacting wi...	10/13/1992
5140149	Optical apparatus using wavelength selective photocoupler The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating. A photosensor which is...	08/18/1992
4939561	Infrared sensor An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-X GeX epitaxial layer grown on a p-type substrate, wherein the chara...	07/03/1990
4910570	Photo-detector for ultraviolet and process for its production A semiconductor photo-detector is disclosed. The inventive photo-detector is especially sensitive to light in the ultraviolet and/or blue portions of the spectrum. The semiconductor body comprising the detector is arranged with a band structure which, thr...	03/20/1990
4772931	Interdigitated Schottky barrier photodetector A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric cur...	09/20/1988
4442446	Sensitized epitaxial infrared detector An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically ...	04/10/1984
4196438	Article and device having an amorphous silicon containing a halogen and method of fabrication An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a h...	04/01/1980
4027319	Schottky barrier phototransistor Disclosed is a phototransistor comprised of an indium arsenide n-type semiconductor substrate, a thin, relatively lightly doped p-type cadmium diffused region in the substrate forming a photosensitive diode junction, and a metal film in rectifying contact...	05/31/1977
3982260	Light sensitive electronic devices The invention provides light sensitive electronic devices wherein cadmium telluride films are supported on iron substrates....	09/21/1976
3952323	Semiconductor photoelectric device A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type ...	04/20/1976

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Class 257/450 - With doping profile to adjust barrier height