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| Number | Title | Issue Date |
| 7321157 | CoSb-based thermoelectric device fabrication method A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buf... | 01/22/2008 |
| 7317179 | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate Systems and methods are disclosed for shaping and homogenizing a laser beam for interaction with a film. The shaping and homogenizing system may include a lens array and a lens that is positioned to receive laser light from the lens array and produce a respective el... | 01/08/2008 |
| 7285435 | Active matrix organic electroluminescence display device and method for manufacturing the same An active matrix organic electroluminescence display device and a method for manufacturing the same are disclosed. The active matrix organic electroluminescence display device includes a scan line in one direction, a data line substantially perpendicular to the scan... | 10/23/2007 |
| 7277188 | Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate Systems and methods are disclosed for focusing a beam for an interaction with a film deposited on a substrate wherein the focused beam defines a short axis and a long axis. In one aspect, the system may include a detecting system to analyze light reflected from the ... | 10/02/2007 |
| 7135072 | Methods of fabricating silicon carbide crystals Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed... | 11/14/2006 |
| 7115973 | Dual-sided semiconductor device with a resistive element that requires little silicon surface area A dual-sided semiconductor device is formed on a wafer with a resistive element that is formed through the wafer. By forming the resistive element through the wafer, a resistive element, such as a large resistive element, can be formed on the wafer that requires ver... | 10/03/2006 |
| 7088758 | Relax gas discharge laser lithography light source An apparatus and method are disclosed for operating a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, which may comprise: a disp... | 08/08/2006 |
| 7061959 | Laser thin film poly-silicon annealing system A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in a film on a workpiece is disclosed, which may comprise a master oscillator power amplifier MOPA or power oscillator power amplifier confi... | 06/13/2006 |
| 7034328 | Vertical geometry InGaN LED A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quant... | 04/25/2006 |
| 7009140 | Laser thin film poly-silicon annealing optical system A high energy, high repetition rate workpiece surface heating method and apparatus are disclosed which may cmprise a pulsed XeF laser operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical syste... | 03/07/2006 |
| 6992394 | Multi-level conductive lines with reduced pitch The invention describes the use of conductive lines having a non-rectangular shaped cross section to reduce line capacitance for a given pitch. Such conductive lines can reduce the height of integrated circuits with multi-level conductive lines without increasing li... | 01/31/2006 |
| 6961117 | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a f... | 11/01/2005 |
| 6948230 | Integrated circuit inductors The invention relates to an inductor comprising a plurality of interconnected conductive segments interwoven with a substrate. The inductance of the inductor is increased through the use of coatings and films of ferromagnetic materials such as magnetic metals, alloy... | 09/27/2005 |
| 6921925 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 07/26/2005 |
| 6881984 | Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are formed on the substrate, a light extracting section formed on the upper se... | 04/19/2005 |
| 6573531 | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, a... | 06/03/2003 |
| 6521473 | Method of fabricating a liquid crystal display The present invention relates to a method of fabricating a liquid crystal display panel that involves patterning a silicon film crystallized by sequential lateral solidification. The method comprises the steps of preparing a silicon film, crystallizing th... | 02/18/2003 |
| 6437363 | Semiconductor photonic device A semiconductor photonic device includes a substrate having a cleavage plane perpendicular to a principal plane thereof; a ZnO film on the substrate; and a compound semiconductor layer expressed by Inx Gay Alz N (x+y+z=1, ... | 08/20/2002 |
| 6172370 | Lateral PN arrayed digital x-ray image sensor An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two surfaces of the wafer. The PN junctions are formed using neutr... | 01/09/2001 |
| 5434531 | High voltage tolerant switch constructed for a low voltage CMOS process An integrated circuit which includes a pair of serially arranged P channel transistor devices connected with their source and drain terminals in series. The devices are constructed as N well devices in a P substrate. Using a pair of N well devices allows ... | 07/18/1995 |
| 5285090 | Contacts to rod shaped Schottky gate fets Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes... | 02/08/1994 |
| 4633282 | Metal-semiconductor field-effect transistor with a partial p-type drain A metal-semiconductor field-effect transistor (MESFET) is provided with a p-type region adjacent the n-type region under the drain contact. Holes injected from this p-type region compensate the negative space charge region at the channel to substrate inte... | 12/30/1986 |
| 4549196 | Lateral bipolar transistor A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the sidewall of one groo... | 10/22/1985 |
| 4207670 | Method for making a solid state neuron Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.... | 06/17/1980 |
| 4163983 | Solid state neuron A semiconductor neuron comprises a tunnel diode having a region of recrystallized semiconductor material formed in situ in a columnar structure body of semiconductor material by thermal gradient zone melting. Individual electrical leads are affixed to the... | 08/07/1979 |
| 4157564 | Deep diode devices Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the... | 06/05/1979 |
| 4071378 | Process of making a deep diode solid state transformer An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columna... | 01/31/1978 |
| 4063966 | Method for forming spaced electrically isolated regions in a body of semiconductor material An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other. The preferred crystal orientations of the surface on whic... | 12/20/1977 |
| 4063272 | Semiconductor device and method of manufacture thereof Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Is... | 12/13/1977 |
| 4042448 | Post TGZM surface etch Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of the wafer, but th... | 08/16/1977 |
| 4032955 | Deep diode transistor A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed in situ by the mi... | 06/28/1977 |
| 4032960 | Anisotropic resistor for electrical feed throughs An anistropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel region extends entirely through, and terminates in two majo... | 06/28/1977 |
| 4024566 | Deep diode device When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the crystal. This random ... | 05/17/1977 |
| 4024565 | Deep diode solid state transformer An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columna... | 05/17/1977 |
| 4011582 | Deep power diode One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.... | 03/08/1977 |
| 4006040 | Semiconductor device manufacture An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one t... | 02/01/1977 |
| 3995309 | Isolation junctions for semiconductor devices Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized s... | 11/30/1976 |
| 3990093 | Deep buried layers for semiconductor devices A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.... | 11/02/1976 |
| 3988757 | Deep diode zeners A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermomigration of metal "wires" through the body to form a region of c... | 10/26/1976 |
| 3988771 | Spatial control of lifetime in semiconductor device Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore the turn-off time ... | 10/26/1976 |
