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| Number | Title | Issue Date |
| 8143687 | Multi-band, reduced-volume radiation detectors and methods of formation A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has th... | 03/27/2012 |
| 8129812 | Trench isolation structure and method of formation In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another active region. The at least one trench isolation region comprises a ... | 03/06/2012 |
| 8115268 | Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semicondu... | 02/14/2012 |
| 8110886 | Photodiode with integrated semiconductor circuit and method for the production thereof A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by mea... | 02/07/2012 |
| 8044479 | Transistors, semiconductor devices, assemblies and constructions Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material. Liners are formed along sidewalls of the openings, and then s... | 10/25/2011 |
| 8018015 | Buried conductor for imagers A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The p... | 09/13/2011 |
| 7936036 | Solid-state image sensor with two different trench isolation implants A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region;... | 05/03/2011 |
| 7902624 | Barrier regions for image sensors Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comp... | 03/08/2011 |
| 7898052 | Component with a semiconductor junction and method for the production thereof A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Int... | 03/01/2011 |
| 7859075 | Image sensor and method of manufacturing the same An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor i... | 12/28/2010 |
| 7816752 | Solid state imaging device and camera comprising a device isolation having a step In a solid state imaging device which includes a photodiode in the upper part of a silicon substrate and a MOSFET active region separated from the photodiode by a device isolation region, the width of the device isolation region is smaller in its lower part than in ... | 10/19/2010 |
| 7777289 | Integrated photodiode of the floating substrate type An integrated circuit includes at least one photodiode of the floating substrate type which is associated with a read transistor. The photodiode is formed from a buried layer lying beneath the floating substrate and an upper layer lying on the floating substrate. Th... | 08/17/2010 |
| 7768090 | Semiconductor photodetector device A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first condu... | 08/03/2010 |
| 7737519 | Photoelectric conversion device and manufacturing method thereof The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region ... | 06/15/2010 |
| 7732885 | Semiconductor structures with dual isolation structures, methods for forming same and systems including same A semiconductor structure with dual isolation structures is disclosed. The semiconductor structure may include a protruding isolation structure in a pixel array region of a substrate and an embedded isolation structure in a peripheral device region of the same subst... | 06/08/2010 |
| 7642614 | Solid-state imaging device and method for manufacturing the same Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semic... | 01/05/2010 |
| 7638853 | Solid state imaging device, method for fabricating the same, and camera A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a dev... | 12/29/2009 |
| 7586170 | Image sensors including impurity layer adjacent isolation region Image sensors include a pixel region and a logic region. Pixel isolation regions in the pixel region include pixel isolation region walls that are less sloped than logic isolation region walls in the logic region. An impurity layer also may be provided adjacent at l... | 09/08/2009 |
| 7492027 | Reduced crosstalk sensor and method of formation Isolation methods and devices for isolating regions of a semiconductor device are disclosed. The isolation methods and structures include forming an isolating trench among pixels or other active areas of a semiconductor device. The trench extends through the substra... | 02/17/2009 |
| 7485939 | Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here,... | 02/03/2009 |
| 7425745 | Semiconductor device and method for manufacturing the same A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film, a diffusion layer that is formed inside the semiconductor substrate ... | 09/16/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7397100 | Image sensor and method of manufacturing the same An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor i... | 07/08/2008 |
| 7361989 | Stacked imager package An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip... | 04/22/2008 |
| 7354812 | Multiple-depth STI trenches in integrated circuit fabrication Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider tre... | 04/08/2008 |
| 7352042 | Radiation-emitting semiconductor device and method of manufacturing such a device The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a bas... | 04/01/2008 |
| 7348651 | Pinned photodiode fabricated with shallow trench isolation A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-t... | 03/25/2008 |
| 7348652 | Bulk-isolated PN diode and method of forming a bulk-isolated PN diode A technique for making a bulk isolated PN diode. Specifically, a technique is provided for making a voltage clamp with a pair of bulk isolated PN diode. Another embodiment provides for a voltage clamp with a pair of bulk isolated PN diodes in parallel with a pair of... | 03/25/2008 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends betwe... | 03/11/2008 |
| 7342269 | Photoelectric conversion device, and process for its fabrication In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate, a se... | 03/11/2008 |
| 7332701 | Dual-mode CMOS imaging sensor with supporting LED The present invention relates to a sensor device for sensing an image of an object, wherein a detection means (14) for detecting radiation received from the object is supported by a light-emitting semiconductor means (12) for emitting radiation towards... | 02/19/2008 |
| 7326994 | Logic compatible non-volatile memory cell A non-volatile memory cell and a method of manufacturing the same are provided. The non-volatile memory cell includes a semiconductor substrate, a floating gate over the semiconductor substrate, a first, a second, and a third capacitor each having a first plate and ... | 02/05/2008 |
| 7321141 | Image sensor device and manufacturing method thereof A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and a plurality of photodiodes are formed in each photo sensing region. T... | 01/22/2008 |
| 7307327 | Reduced crosstalk CMOS image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels ext... | 12/11/2007 |
| 7303950 | Semiconductor device, method of manufacturing same and method of designing same A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS... | 12/04/2007 |
| 7301188 | CMOS image sensor and method of manufacturing the same An image sensor includes a substrate with an epitaxial layer deposited thereon, a plurality of photodiodes buried in the epitaxial layer, and a plurality of field oxide films interposed between the photodiodes for insulating the photodiodes. Each of the field oxide ... | 11/27/2007 |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7279395 | Suppression of dark current in a photosensor for imaging A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers. ... | 10/09/2007 |
| 7275424 | Wafer level capped sensor A sensor has a die (with a working portion), a cap coupled with the die to at least partially cover the working portion, and a conductive pathway extending through the cap to the working portion. The pathway provides an electrical interface to the working portion. | 10/02/2007 |
| 7274081 | Front-illuminated-type photodiode array A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption l... | 09/25/2007 |
