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"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 7829969 | Storage pixel Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to... | 11/09/2010 |
| 7427740 | Image sensor with drain region between optical black regions An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain r... | 09/23/2008 |
| 7378635 | Method and apparatus for dark current and hot pixel reduction in active pixel image sensors A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer trans... | 05/27/2008 |
| 7332786 | Anti-blooming storage pixel Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to... | 02/19/2008 |
| 7232526 | Method and apparatus for controlling material removal from semiconductor substrate using induced current endpointing A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a curre... | 06/19/2007 |
| 7205523 | Solid state image pickup device, method of manufacturing the same, and camera The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photo... | 04/17/2007 |
| 7078751 | Solid-state imaging device The sources or drains 14 of transistors and photodiodes 13, which constitute shaded pixels covered with a shading layer 16, are formed on a surface of a highly doped well 20 provided on a lowly doped substrate 11. Therefore, a pote... | 07/18/2006 |
| 7061028 | Image sensor device and method to form image sensor device A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but n... | 06/13/2006 |
| 7005690 | Solid-state image sensor The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduc... | 02/28/2006 |
| 7002231 | Barrier regions for image sensors Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge... | 02/21/2006 |
| 6995408 | Bidirectional photothyristor chip A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority ca... | 02/07/2006 |
| 6963092 | Image sensors including photodetector and bypass device connected to a power supply voltage A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charg... | 11/08/2005 |
| 6946702 | Resistance random access memory The present invention provides a resistance random access memory structure, including a plurality of word lines in a substrate, a plurality of reset lines coupled to the word lines, a dielectric layer on the substrate, a plurality of memory units in the dielectric l... | 09/20/2005 |
| 6927434 | Providing current to compensate for spurious current while receiving signals through a line Circuits, methods, and systems are disclosed in which a current is provided to compensate for spurious current while receiving signals through a line. For example, the spurious current can be sensed and the compensating current can be approximately equal to the sens... | 08/09/2005 |
| 6888573 | Digital pixel sensor with anti-blooming control An anti-blooming charge accumulation pixel using an anti-blooming element coupled to the pixel prevents blooming by ensuring that a voltage of a charge accumulation device of the pixel is always returned to a clamping voltage following comparison events. The anti-bl... | 05/03/2005 |
| 6760073 | Solid-state image sensor There is provided a solid-state image sensor including (a) a plurality of first charge transfer sections each for vertically transferring electric charges, formed on a surface of a semiconductor layer, (b) a second charge transfer section for horizontally transferri... | 07/06/2004 |
| 6501109 | Active CMOS pixel with exponential output based on the GIDL mechanism A structure of a new active pixel sensor cell formed in a semiconductor substrate is disclosed. An n-type region is formed in the substrate extending to the surface. Two p+ regions are formed in the n-type region, both extending to the surface and coverin... | 12/31/2002 |
| 6489642 | Image sensor having improved spectral response uniformity An image sensor, includes a semiconductor substrate; a photosensor having, a first photosensing region including a first stack of one or more layers of transparent materials overlying the substrate, the first photosensing region having a spectral response... | 12/03/2002 |
| 6369853 | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A sem... | 04/09/2002 |
| 6278487 | Solid-state image sensing device A solid-state image sensing device includes photoelectric conversion portions, vertical charge transfer portions, a horizontal charge transfer portion, an unwanted charge removing portion, and a potential barrier portion. The photoelectric conversion port... | 08/21/2001 |
| 6169318 | CMOS imager with improved sensitivity An improved pixel design for a CMOS image sensor with a small feature size is described. In conventional image sensors of this type, the quantum efficiency is typically reduced as a result of the decreased thickness of the top n-type layer of the photodio... | 01/02/2001 |
| 5998818 | Amplification type solid-state imaging device The amplification type solid-state imaging device of this invention includes amplification type photoelectric converting elements arranged in a matrix. Each of the amplification type photoelectric converting elements includes: a transistor formed at a sur... | 12/07/1999 |
| 5986297 | Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon... | 11/16/1999 |
| 5942774 | Photoelectric conversion element and photoelectric conversion apparatus A photoelectric conversion element includes a photoelectric conversion portion for generating and storing a charge according to incident light, an amplifying portion having a control region for generating a signal output according to the charge received i... | 08/24/1999 |
| 5903021 | Partially pinned photodiode for solid state image sensors A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the pho... | 05/11/1999 |
| 5898195 | Solid-state imaging device of a vertical overflow drain system A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconduc... | 04/27/1999 |
| 5872371 | Active pixel sensor with punch-through reset and cross-talk suppression In an active pixel sensor having a plurality of pixels, each of the pixels having a photodetector for accumulating charge from incident light, a transfer gate for removing charge from the photodetector, a floating diffusion that acts as a sense node to an... | 02/16/1999 |
| 5867055 | Semiconductor device containing an adjustable voltage generator A semiconductor device and a method of inspecting the same are described. The semiconductor device does not need voltage adjustment of an external driver circuit, since it contains a voltage generator to inspect and memorize the best value of voltage by c... | 02/02/1999 |
| 5861645 | Amplifying type solid-state imaging device and amplifying type solid-state imaging apparatus An amplifying type solid-state imaging device having a transistor formed on a semiconductor base and a charge release portion which stores a signal charge which is generated by light incident on the transistor and outputs a change of an electrical signal ... | 01/19/1999 |
| 5859462 | Photogenerated carrier collection of a solid state image sensor array An image sensor comprising a semiconductor of a first conductivity type having a plurality of pixels formed thereon; and a region heavily doped with the first conductivity type semiconductor beneath the pixels formed such that there is a gradient formed w... | 01/12/1999 |
| 5710447 | Solid state image device having a transparent Schottky electrode Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impu... | 01/20/1998 |
| 5587596 | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range The size of an active pixel sensor cell is reduced by utilizing a single MOS transistor formed in a well to perform the functions conventionally performed by a photogate/photodiode, a sense transistor, and an access transistor. Light energy striking the w... | 12/24/1996 |
| 5567974 | Semiconductor device to absorb stray carriers A photo IC having a plurality of photodiodes is disclosed. A semiconductor region to absorb stray carriers is provided between the photodiodes. Stray carriers generated by incidence of light are absorbed by the semiconductor region. As a result, crosstalk... | 10/22/1996 |
| 5404039 | Solid state imaging device and method of manufacture therefor A solid state imaging device of the present invention includes: a semiconductor substrate of one conductive type; a well layer made of a semiconductor of the other conductive type formed on the semiconductor substrate; a photodetecting portion made of a s... | 04/04/1995 |
| 5349216 | Charge coupled device image sensor A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as ... | 09/20/1994 |
| 5331165 | Split event reduced x-ray imager The present invention relates to a charge coupled device CCD X-ray imager for reducing split events during integration. The imager includes a semiconductor material having a photosensitive region for receiving X-ray radiation energy and for generating ele... | 07/19/1994 |
| 5298778 | Solid state image pickup device An application-type solid state imaging device which includes a plurality of picture elements arranged in a two-dimensional matrix. A sensor region is surrounded by a substrate and a gate region is positioned laterally substantially about the sensor regio... | 03/29/1994 |
| 5285091 | Solid state image sensing device A solid state image sensing device has a plurality of photo sensing elements arranged in a two-dimensional fashion at pixel units pixel unit in the horizontal and vertical directions. Each of the plurality of photo sensing elements is formed of a vertical... | 02/08/1994 |
| 5130774 | Antiblooming structure for solid-state image sensor A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region of the opposite conductivit... | 07/14/1992 |
| 4891682 | Solid state image pick-up device having a number of static induction transistor image sensors A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel reg... | 01/02/1990 |
