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| Number | Title | Issue Date |
| 8154100 | Electromagnetic wave detecting element The present invention is to provide an electromagnetic wave detecting element that can suppress the trapping of charges in a semiconductor layer. Plural lower electrodes, which collect charges generated in the semiconductor layer, are each provided to cover at least... | 04/10/2012 |
| 8129811 | Techniques for three-dimensional circuit integration Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top d... | 03/06/2012 |
| 8120131 | Array of alpha particle sensors An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radi... | 02/21/2012 |
| 8067813 | Integrated MIS photosensitive device using continuous films An integrated photosensitive device with a metal-insulator-semiconductor (MIS) photodiode constructed with one or more substantially continuous layers of semiconductor material and with a substantially continuous layer of dielectric material. ... | 11/29/2011 |
| 8044478 | Image sensor comprising a photodiode in a crystalline semiconductor layer and manufacturing method thereof Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectri... | 10/25/2011 |
| 7906826 | Many million pixel image sensor A CMOS image sensor with a many million pixel count. Applicants have developed techniques for combining its continuous layer photodiode CMOS sensor technology with CMOS integrated circuit lithography stitching techniques to provide digital cameras with an almost unl... | 03/15/2011 |
| 7859074 | Sensor die structure A sensor is implemented in an integrated circuit. The sensor includes one or more sensor pads that are provided at or near a surface of the integrated circuit. One or more integrated circuit components such as a sense amplifier are provided in the integrated circuit... | 12/28/2010 |
| 7816751 | Optical sensor An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetwe... | 10/19/2010 |
| 7786543 | CDS capable sensor with photon sensing layer on active pixel circuit A MOS or CMOS based active pixel sensor with special sampling features to substantially eliminate clock noise. The sensor includes an array of pixels fabricated in or on a substrate, each pixel defining a charge collection node on which charges generated inside a ph... | 08/31/2010 |
| 7772666 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor may be capable of improved thickness uniformity form microlenses formed at a reduced distance from the photodiodes. The CMOS image sensor can include: a semiconductor sub... | 08/10/2010 |
| 7737518 | Optical microsystem and fabrication process The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce ... | 06/15/2010 |
| 7719074 | Sensor die structure A sensor is implemented in an integrated circuit. The sensor includes one or more sensor pads that are provided at or near a surface of the integrated circuit. One or more integrated circuit components such as a sense amplifier are provided in the integrated circuit... | 05/18/2010 |
| 7671435 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors fo... | 03/02/2010 |
| 7598583 | Image sensor An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area ... | 10/06/2009 |
| 7554169 | Semiconductor device and method of manufacturing the same It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially lami... | 06/30/2009 |
| 7554170 | Variably responsive photosensor A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At lea... | 06/30/2009 |
| 7531885 | Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes ... | 05/12/2009 |
| 7525168 | CMOS sensor with electrodes across photodetectors at approximately equal potential A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiod... | 04/28/2009 |
| 7492026 | Light sensor located above an integrated circuit A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer... | 02/17/2009 |
| 7459760 | Photoelectric conversion device and image pickup system with photoelectric conversion device A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a... | 12/02/2008 |
| 7436010 | Solid state imaging apparatus, method for driving the same and camera using the same A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to... | 10/14/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432576 | Grid metal design for large density CMOS image sensor A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where... | 10/07/2008 |
| 7413923 | Method of manufacturing CMOS image sensor Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is ... | 08/19/2008 |
| 7411233 | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semicondu... | 08/12/2008 |
| 7402849 | Parallel, individually addressable probes for nanolithography A microfabricated probe array for nanolithography and process for designing and fabricating the probe array. The probe array consists of individual probes that can be moved independently using thermal bimetallic actuation or electrostatic actuation methods. The prob... | 07/22/2008 |
| 7400023 | Photoelectric converting film stack type solid-state image pickup device and method of producing the same In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched... | 07/15/2008 |
| 7397100 | Image sensor and method of manufacturing the same An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor i... | 07/08/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7381938 | Photoelectric converter and x-ray image pick-up device A photoelectric converter includes a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, and either scan circuits or detection circuits that are arranged on tw... | 06/03/2008 |
| 7375406 | Thermoplastic overmolding for small package turbocharger speed sensor A sensor package apparatus includes a lead frame substrate that supports one or more electrical components, which are connected to and located on the lead frame substrate. A plurality of wire bonds are also provided, which electrically connect the electrical compone... | 05/20/2008 |
| 7372120 | Methods and apparatus to optically couple an optoelectronic chip to a waveguide Methods and apparatus to optically couple an optoelectronic chip to a waveguide are disclosed. A disclosed apparatus includes a substrate, a waveguide mounted on the substrate and an optoelectronic chip bonded to the substrate and having an optical element directly ... | 05/13/2008 |
| 7352043 | Multispectral detector matrix The invention concerns a matrix structure of multispectral detectors (200) comprising: a superimposition of several layers of semiconductor material separated by layers of dielectric material transparent to a light to be det... | 04/01/2008 |
| 7345328 | Solid-state image pick-up device of photoelectric converting film lamination type A solid-state image pick-up device of a photoelectric converting film lamination type including a semiconductor substrate and at least three layers of photoelectric converting films each of which is interposed between a common electrode film and pixel electrode film... | 03/18/2008 |
| 7344937 | Methods and apparatus with silicide on conductive structures Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager... | 03/18/2008 |
| 7342263 | Circuit device A circuit device is provided which can be manufactured at reduced costs and which is highly reliable. The circuit device includes a Sensor area formed on part of a semiconductor substrate, a circuit area formed around the sensor area on the semiconductor substrate t... | 03/11/2008 |
| 7342269 | Photoelectric conversion device, and process for its fabrication In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate, a se... | 03/11/2008 |
| 7338832 | CMOS image sensor and method of fabricating the same A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cov... | 03/04/2008 |
| 7332759 | Method and structure to reduce optical crosstalk in a solid state imager Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are us... | 02/19/2008 |
| 7326589 | Method for producing a TFA image sensor and one such TFA image sensor The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electro... | 02/05/2008 |
