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| Number | Title | Issue Date |
| 8183657 | Solid state imaging device comprising charge retention region and buried layer below gate A solid state imaging device, includes: a sensor cell array having a plurality of sensor cells arranged in a matrix on a substrate, each sensor cell including: a photoelectric transducer provided in the substrate and generating photo-generated electric charges accor... | 05/22/2012 |
| 8174087 | Electromagnectic wave detecting element The present invention is to provide an electromagnetic wave detecting element that can prevent a decrease in light utilization efficiency at sensor portions. The sensor portions are provided so as to correspond to respective intersection portions of scan lines and s... | 05/08/2012 |
| 8154099 | Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate... | 04/10/2012 |
| 8129810 | Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in s... | 03/06/2012 |
| 8106473 | Germanium film optical device A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surfac... | 01/31/2012 |
| 8072040 | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system An image pickup apparatus includes light receiving areas arranged two-dimensionally. A vertical scanning circuit comprises unit circuit stages arranged in the vertical direction and a horizontal scanning circuit comprises unit circuit stages arranged in the horizont... | 12/06/2011 |
| 8035184 | Broadband imaging device This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related... | 10/11/2011 |
| 8030725 | Apparatus and methods for detecting evaporation conditions Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with ... | 10/04/2011 |
| 8030724 | Solid-state imaging device and method for fabricating the same A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main... | 10/04/2011 |
| 8013413 | Distance image sensor In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the firs... | 09/06/2011 |
| 7968963 | Photodiode array and image pickup device using the same A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array 10 according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk por... | 06/28/2011 |
| 7964929 | Method and apparatus providing imager pixels with shared pixel components The disclosed embodiments employ shared pixel component architectures that arrange the shared pixel components for a group of pixels within different pixels of the group. ... | 06/21/2011 |
| 7956434 | Image sensor and method for manufacturing the same Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically ... | 06/07/2011 |
| 7884438 | Megavoltage imaging with a photoconductor based sensor A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the sec... | 02/08/2011 |
| 7847363 | Semiconductor memory Borderless contacts for word lines or via contacts for bit lines are formed using interconnect patterns, a part of which is removed. A semiconductor memory includes: a plurality of active regions AAi, AAi+1, . . . , AAn, which extend... | 12/07/2010 |
| 7843027 | Solid-state imaging device, camera and method of producing the solid-state imaging device A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second condu... | 11/30/2010 |
| 7808066 | Image sensor and method of manufacturing the same An image sensor includes a semiconductor substrate including a pixel region and a peripheral circuit region; interlayer insulating films including metal wires arranged on the pixel region and the peripheral circuit region; and a photodiode and an upper electrode dis... | 10/05/2010 |
| 7795698 | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system An image pickup apparatus having plural light receiving areas arranged two-dimensionally, and vertical and horizontal scanning circuits composed of plural unit circuit stages arranged in the vertical and horizontal directions, respectively. The vertical and horizont... | 09/14/2010 |
| 7791159 | Solid-state imaging device and method for fabricating the same A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main... | 09/07/2010 |
| 7772665 | Solid-state imaging device A first imaging portion includes a first group of photoelectric conversion elements. A second imaging portion includes a second group of photoelectric conversion elements. The first imaging portion and the second imaging portion are disposed at adjacent positions. A... | 08/10/2010 |
| 7755156 | Producing layered structures with lamination A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be ... | 07/13/2010 |
| 7723815 | Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization A wafer bonded composite structure is provided for matching a coefficient of thermal expansion of a first semiconductor chip to a coefficient of thermal expansion of a second semiconductor chip in order to provide a thermally matched hybridized semiconductor chip as... | 05/25/2010 |
| 7701026 | Imaging device A backside imaging device includes a bump that is disposed overlapping with a sensor array region or a photodiode in a planar view. By this configuration, the bump becomes a support, and the semiconductor substrate is prevented from being damaged because of a bendin... | 04/20/2010 |
| 7579666 | Front illuminated back side contact thin wafer detectors The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susce... | 08/25/2009 |
| 7550814 | Solid-state imaging device A solid-state imaging device including: a plurality of photosensitive cells, each having a photodiode, arranged on a semiconductor substrate (1) in a matrix; and a peripheral driving circuit that has a plurality of transistors for driving the plurality of pho... | 06/23/2009 |
| 7545014 | Three-dimensional resonant cells with tilt up fabrication A composite material for providing at least one of a negative effective permeability and a negative effective permittivity for incident radiation of at least one wavelength is described. The composite material comprises a plurality of three-dimensional resonant cell... | 06/09/2009 |
| 7479686 | Backside imaging through a doped layer Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an... | 01/20/2009 |
| 7470965 | Solid-state imaging device In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semi... | 12/30/2008 |
| 7462920 | Verification architecture of infrared thermal imaging array module The present invention relates to a verification architecture of an infrared thermal imaging array module, which includes the following steps. Perform specification design of thermal imaging module, epitaxy, and verification of optical characteristics for calibrating... | 12/09/2008 |
| 7439600 | Photovoltaic device forming a glazing The invention concerns a photovoltaic device (1) comprising a plurality of p-i-n type photovoltaic cells (2) arranged on a substrate (3), wherein said cells (2) are arranged, in the form of a single layer, parallel to one another and the ... | 10/21/2008 |
| 7439599 | PIN photodiode structure and fabrication process for reducing dielectric delamination A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type elect... | 10/21/2008 |
| 7427782 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices A method of making a light active sheet. A bottom substrate having an electrically conductive surface is provided. A hotmelt adhesive sheet is provided. Light active semiconductor elements, such as LED die, are embedded in the hotmelt adhesive sheet. The LED die eac... | 09/23/2008 |
| 7425734 | Thin-film transistor array with ring geometry An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a chann... | 09/16/2008 |
| 7425725 | Temperature sensor for a liquid crystal display panel A sensor is provided, which includes a substrate, an insulating layer formed on the substrate, a semiconductor formed on the insulating layer, an ohmic contact formed on the semiconductor, a sensor input electrode and a sensor output electrode formed on the ohmic co... | 09/16/2008 |
| 7413923 | Method of manufacturing CMOS image sensor Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is ... | 08/19/2008 |
| 7408190 | Thin film transistor and method of forming the same A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer i... | 08/05/2008 |
| 7408238 | Photodiode array and production method thereof, and radiation detector A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incidence surface of light L to be detected, in the n-type silicon substrate 3. Space... | 08/05/2008 |
| 7400023 | Photoelectric converting film stack type solid-state image pickup device and method of producing the same In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched... | 07/15/2008 |
| 7394140 | Micromirror array device with electrostatically deflectable mirror plates Disclosed herein is a micromirror array device that comprises an array of reflective deflectable mirror plates each being associated with one single addressing electrode to be deflected to an ON state angle. A light transmissive electrode is disposed proximate to th... | 07/01/2008 |
| 7388242 | Image sensor having integrated thin film infrared filter An image sensor is disclosed. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a multilayer stack is formed over the pixels, the multilayer stack adapted to filter incident ... | 06/17/2008 |
