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| Number | Title | Issue Date |
| 7880166 | Fast recovery reduced p-n junction rectifier A fast recovery rectifier structure with the combination of Schottky structure to relieve the minority carriers during the forward bias condition for the further reduction of the reverse recovery time during switching in addition to the lifetime killer such as Pt, A... | 02/01/2011 |
| 7705348 | Semiconductor light-emitting device with electrode for N-polar InGaAIN surface One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped a... | 04/27/2010 |
| 7501650 | P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from... | 03/10/2009 |
| 7405419 | Unidirectionally conductive materials for interconnection A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as b... | 07/29/2008 |
| 7323422 | Dielectric layers and methods of forming the same High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or ... | 01/29/2008 |
| 7321157 | CoSb-based thermoelectric device fabrication method A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buf... | 01/22/2008 |
| 7282382 | Method for producing a photodiode contact for a TFA image sensor The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermed... | 10/16/2007 |
| 7241677 | Process for producing integrated circuits including reduction using gaseous organic compounds This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing ce... | 07/10/2007 |
| 7235820 | Group III-nitride light emitting device The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode ... | 06/26/2007 |
| 7229676 | Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by thermal transfer, particularly l... | 06/12/2007 |
| 7227177 | Doped semiconductor nanocrystals A particle, includes a semiconductor nanocrystal. The nanocrystal is doped. ... | 06/05/2007 |
| 7208375 | Semiconductor device A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than th... | 04/24/2007 |
| 7205626 | Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties In a semiconductor module, twenty five semiconductor devices having light receiving properties, for example, are arranged in five by five matrices using a conductor mechanism formed from six lead frames Each column of semiconductor devices is connected in series and... | 04/17/2007 |
| 7204735 | Production apparatus and method of producing a light-emitting device by using the same apparatus The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an a... | 04/17/2007 |
| 7175714 | Electrode-built-in susceptor and a manufacturing method therefor An electrode-built-in susceptor comprises a mounting plate and a supporting plate which are made of an aluminium-nitride-group-sintered member, an inner electrode which is made of a conductive aluminium-nitride-tantalum-nitride-composite-sintered-member or a conduct... | 02/13/2007 |
| 7164188 | Buried conductor patterns formed by surface transformation of empty spaces in solid state materials A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing the monocrystalline substrat... | 01/16/2007 |
| 7129644 | Light-emitting device, and electric device using the same In order to obtain a light-emitting device having a higher aperture ratio in pixels than that of the prior art, a source signal line and a current supply line to be connected with a pixel unit are switched by a switching circuit to use a common wiring line, so that ... | 10/31/2006 |
| 7115909 | Light emitting device and method of manufacturing the same Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor laye... | 10/03/2006 |
| 7109528 | Light receiving or emitting semiconductor apparatus With a solar ball 10 serving as a light-receiving semiconductor apparatus, the outer surface of a spherical solar cell 1 is covered with a light-transmitting outer shell member 11, and electrode members 14, 15 are connected to electrodes ... | 09/19/2006 |
| 7105866 | Heterojunction tunneling diodes and process for fabricating same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the ... | 09/12/2006 |
| 7057202 | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data s... | 06/06/2006 |
| 6939604 | Doped semiconductor nanocrystals A particle, includes a semiconductor nanocrystal. The nanocrystal is doped. ... | 09/06/2005 |
| 6888172 | Apparatus and method for encapsulating an OLED formed on a flexible substrate An apparatus and method are disclosed for encapsulating an OLED device formed on a flexible substrate. The OLED device is moisture protected by an encapsulation which sandwiches the OLED device between two transparent dielectric metal oxide layers. The oxide layers ... | 05/03/2005 |
| 6858866 | III-nitride light emitting diode The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the edd... | 02/22/2005 |
| 6849891 | RRAM memory cell electrodes A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation ... | 02/01/2005 |
| 6717358 | Cascaded organic electroluminescent devices with improved voltage stability A cascaded organic electroluminescent device with connecting units having improved voltage stability is disclosed. The device comprises an anode, a cathode, a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein the organ... | 04/06/2004 |
| 6642540 | Semiconductor integrated circuit device A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, and a metal layer ... | 11/04/2003 |
| 6011272 | Silicided shallow junction formation and structure with high and low breakdown voltages A method, and structure resulting therefrom, of forming a metal silicide at a shallow junction of a diode in a single crystalline substrate without encroaching on the shallow junction by forming a metal layer on the substrate over the junction followed by... | 01/04/2000 |
| 5760482 | Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminum bonding layer The invention relates to a semiconductor device of the type sealed in glass, comprising a silicon semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal by means of a bonding layer, the bonding la... | 06/02/1998 |
| 5614727 | Thin film diode having large current capability with low turn-on voltages for integrated devices A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A firs... | 03/25/1997 |
| 5559817 | Complaint layer metallization A compliant layer metallization for relieving thermal and mechanical stress developed between a semiconductor and a semiconductor submount. The compliant layer metallization includes a compliant layer, a wetting layer and a barrier layer. The compliant la... | 09/24/1996 |
| 5506426 | Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film Chalcopyrite compound semiconductor thin films represented by I-III-VI2-x Vx or I-III-VI2-x VIIx, and semiconductor devices having a I-III-VI2 /I-III-VI2-x Vx or I-III-VI2 | 04/09/1996 |
| 5323059 | Vertical current flow semiconductor device utilizing wafer bonding Briefly stated, the present invention provides a vertical current flow semiconductor device (17). The vertical current flow semiconductor device (17) includes a semiconductor substrate (12) having an intermediate conductor layer (16) on a surface of the s... | 06/21/1994 |
| 5213906 | Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer corresponding to the empirical formula REPc, where RE is ... | 05/25/1993 |
| 5160985 | Insulated gate bipolar transistor An insulated gate bipolar transistor has a P-type well region which is partially formed in a surface of an N- -type epitaxial layer formd on a P+ -type semiconductor substrate. An N+ -type emitter region is partially forme... | 11/03/1992 |
| 5148241 | Method of manufacturing a Schottky diode device A Schottky diode device can be fabricated by forming a positive resist layer on an insulating layer formed on N type substrate, and patterning the resist layer. The pattern in the resist includes (i) a first isolation region-defining annular open pattern ... | 09/15/1992 |
| 4335362 | Semiconductor device and a method of contacting a partial region of a semiconductor surface A semiconductor device comprising, a plurality of semiconductor layers having an outer semiconductor layer, and a contact layer uniformly and entirely covering said outer semiconductive layer and having over its entire surface the same material compositio... | 06/15/1982 |
| 4271424 | Electrical contact connected with a semiconductor region which is short circuited with the substrate through said region Disclosed herein is an improvement for the electrode structure of the MIS type semiconductor integrated circuit, in which the ohmic contact with the Si substrate is formed on the top of the semiconductor chip. The electrodes which consist of an upper Al l... | 06/02/1981 |
| 4231053 | High electrical frequency infrared detector A thin-film single-crystal infrared detector exhibiting an increased freqcy of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, p... | 10/28/1980 |
| 4011582 | Deep power diode One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.... | 03/08/1977 |
