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| Number | Title | Issue Date |
| 8063463 | Solid state image wavelength converter A method for encoding information that is encoded in spatial variations of the intensity of light characterized by a first wavelength in light characterized by a second wavelength, the method comprising: transmitting the first wavelength light through a photo-conduc... | 11/22/2011 |
| 8008741 | Photodiode array A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels ... | 08/30/2011 |
| 7994601 | Semiconductor light receiving device The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor ... | 08/09/2011 |
| 7936034 | Mesa structure photon detection circuit A MESA-type photonic detection device, including at least one first junction, which itself includes a first receiving layer and sides formed or etched in the receiving layer. These sides at least partially include a layer with a doping opposite the doping of the fir... | 05/03/2011 |
| 7898051 | Imaging device, method of driving imaging device, and method of manufacturing imaging device An imaging device is provided and includes: a photoelectric conversion layer that has a silicon crystal structure and generates signal charges upon incidence of light; a multiplication and accumulation layer that multiplies the signal charges by a phenomenon of aval... | 03/01/2011 |
| 7875946 | Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type for... | 01/25/2011 |
| 7696591 | Overvoltage protection apparatus and an associated protection circuit The invention relates to an overvoltage protection apparatus having a semiconductor substrate, a first doping region in order to provide a protection diode, and a second doping region in order to provide a protection resistance, with the second doping region being i... | 04/13/2010 |
| 7453131 | Photodiode detector and associated readout circuitry A photodetector circuit incorporates an APD detector structure (10) comprising a pā silicon handle wafer (12) on which a SiO2 insulation layer (14) is deposited in known manner. During manufacture a circular opening (16) is f... | 11/18/2008 |
| 7432537 | Avalanche photodiode structure An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first mult... | 10/07/2008 |
| 7378689 | Apparatus comprising an avalanche photodiode Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD ... | 05/27/2008 |
| 7372495 | CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to ... | 05/13/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7351995 | Floating body germanium phototransistor having a photo absorption threshold bias region A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a fir... | 04/01/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7341921 | Photodiode The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in ... | 03/11/2008 |
| 7332785 | Dye-sensitized solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6... | 02/19/2008 |
| 7326905 | Photodetector and optical receiver An optical receiver is provided with an optical-signal-receiving section and a controlling section. The optical-signal-receiving section incorporates a photodetector. The photodetector has an APD. Through a passivation film, a photoconductor is placed on a portion o... | 02/05/2008 |
| 7326970 | Metamorphic avalanche photodetector A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multipl... | 02/05/2008 |
| 7309638 | Method of manufacturing a semiconductor component A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth s... | 12/18/2007 |
| 7301233 | Semiconductor chip package with thermoelectric cooler The semiconductor chip package may include a substrate having circuit patterns and substrate pads connected with the circuit patterns. At least one semiconductor chip is mounted on the substrate, and a thermoelectric cooler having a P-type material plate and an N-ty... | 11/27/2007 |
| 7301223 | High temperature electronic devices In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for u... | 11/27/2007 |
| 7271376 | Avalanche photodiode with reduced sidewall defects A photodetector circuit incorporates an avalanche photodiode structure having a contact layer (14) forming an ohmic contact over an annular region (18) with the annular guard ring (8). In the fabrication process, the starting substrate can eithe... | 09/18/2007 |
| 7268339 | Large area semiconductor detector with internal gain A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top s... | 09/11/2007 |
| 7262095 | System and method for reducing process-induced charging A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate. ... | 08/28/2007 |
| 7259408 | Avalanche photodiode An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 11... | 08/21/2007 |
| 7256062 | Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the p... | 08/14/2007 |
| 7233051 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type ... | 06/19/2007 |
| 7216423 | Manufacturing process for smaller active areas in flat panel X-ray detectors The present invention relates to a method for forming an active area or flat panel in an X-ray detector device. The method comprises forming at least one flat form factor panel in a first size on a substrate of a second size and extending at least one contact of the... | 05/15/2007 |
| 7215369 | Compact pixel reset circuits using reversed current readout Compact CMOS pixel sensors containing three or four total transistors and four or five control lines provide a high percentage of sensor area for the photodiode that measures light intensity. The CMOS pixel sensors thus have good light sensitivity. The CMOS pixel se... | 05/08/2007 |
| 7209623 | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region defined along an optical waveguide. The absorption region includes a first type of semiconductor material having a... | 04/24/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1ā2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1ā2 microns to an intrinsic semic... | 04/10/2007 |
| 7199437 | Fabrication process for embedding optical band gap structures in a low temperature co-fired ceramic substrate A method for embedding optical band gap (OBG) devices in a ceramic substrate (100). The method includes the step (320) of pre-forming an OBG structure (105). The OBG structure can be a micro optical electromechanical systems (MOEMS) device. Furt... | 04/03/2007 |
| 7196390 | Solid state image wavelength converter A method for encoding information that is encoded in spatial variations of the intensity of light (24) of a first wave-length into light of a second wavelength, the method comprising: generating a first density distribution of electrons homologous with the sp... | 03/27/2007 |
| 7193208 | Time-of-flight capable high resolution pet detector An array of position-sensitive avalanche photodiodes is provided in which output signal contacts from corners of each photodiode are grouped in common for readout. Each photodiode may be provided on a single wafer or chip, with photodiodes being separated by a trenc... | 03/20/2007 |
| 7170775 | MRAM cell with reduced write current A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an ... | 01/30/2007 |
| 7157300 | Fabrication of thin film germanium infrared sensor by bonding to silicon wafer A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate... | 01/02/2007 |
| 7145226 | Scalable microelectronic package using conductive risers This invention relates to an apparatus and methods for increasing the microelectronic package density by stacking multiple microelectronic packages in an array and controlling package to package scalability without stressing the carrier substrates and without limiti... | 12/05/2006 |
| 7122453 | Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a subresolution assist feature that is transmissive of at least a portion of the radiation. The subresolution assist feature alters a patt... | 10/17/2006 |
| 7115963 | Circuitry for image sensors with avalanche photodiodes In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are f... | 10/03/2006 |
