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| Number | Title | Issue Date |
| 8164149 | Vertical hall sensor A vertical Hall sensor which is integrated in a semiconductor chip has at least 6 electric contacts which are arranged along a straight line on the surface of the semiconductor chip. The electric contacts are wired according to a predetermined rule, namely such that... | 04/24/2012 |
| 8143684 | Magnetoresistive element A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first su... | 03/27/2012 |
| 8093670 | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions Methods and apparatus for providing an integrated circuit including a substrate having a magnetic field sensor, first and second conductive layers generally parallel to the substrate, and a dielectric layer disposed between the first and second conductive layers suc... | 01/10/2012 |
| 8072037 | Method and system for electrically coupling a chip to chip package A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the chip and the chip package have at least one such converter ... | 12/06/2011 |
| 8008740 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 ... | 08/30/2011 |
| 7944009 | Magnetoresistive device having specular sidewall layers A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall. ... | 05/17/2011 |
| 7893511 | Integrated circuit, memory module, and method of manufacturing an integrated circuit An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous com... | 02/22/2011 |
| 7872323 | Magnetoresistive device having specular sidewall layers A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall. ... | 01/18/2011 |
| 7872322 | Magnetic field sensor with a hall element A symmetrical vertical Hall element comprises a well of a first conductivity type that is embedded in a substrate of a second conductivity type and which is contacted by four contacts serving as current and voltage contacts. From the electrical point of view, such a... | 01/18/2011 |
| 7808062 | Signal isolator linear receiver A signal isolator for providing at an output thereof representations of input currents from a source provided in an input conductor supported on a substrate having a bridge circuit suited for electrical connection to a source of electrical energization with a pair o... | 10/05/2010 |
| 7732882 | Method and system for electrically coupling a chip to chip package A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the chip and the chip package have at least one such converter ... | 06/08/2010 |
| 7719071 | Bipolar spin transistors and the applications of the same A bipolar spin transistor is provided. In one embodiment of the present invention, the bipolar spin transistor includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type that is different f... | 05/18/2010 |
| 7663198 | Magnetoresistive random access memory device with alternating liner magnetization orientation An arrangement of magnetic liners for the bit lines or word lines of an MRAM device that reduces or eliminates stray magnetic fields at the ends of the magnetic liners, thereby reducing the occurrence of offset fields over portions of the MRAM device due to the magn... | 02/16/2010 |
| 7602033 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling ... | 10/13/2009 |
| 7573112 | Methods and apparatus for sensor having capacitor on chip A magnetic sensor comprises a plurality of layers including a substrate having circuitry, at least one conductive layer to interconnect the circuitry, and an insulator layer to electrically insulate the at least one conductive layer. First and second conductive laye... | 08/11/2009 |
| 7564110 | Electrical lapping guides made from tunneling magnetoresistive (TMR) material Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a b... | 07/21/2009 |
| 7508042 | Spin transfer MRAM device with magnetic biasing The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in play by the flow of spin polarized electrons into the free layer allows... | 03/24/2009 |
| 7492022 | Non-magnetic semiconductor spin transistor A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semi... | 02/17/2009 |
| 7459759 | Magnetic random access memory A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in wh... | 12/02/2008 |
| 7437260 | Concept of compensating for piezo influences on integrated circuitry A semiconductor chip includes a first functional element having a first electronic functional-element parameter exhibiting a dependence relating to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a first output signal... | 10/14/2008 |
| 7420365 | Single chip MR sensor integrated with an RF transceiver At least one magnetic field sensing device and an RF transceiver are integrated in a discrete, single-chip package. Rather than requiring at least two separate chips to wirelessly transmit the device output, an integrated, single chip solution can be used. The singl... | 09/02/2008 |
| 7391091 | Magnetic particle flow detector A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact wi... | 06/24/2008 |
| 7372119 | Cross-shaped Hall device having extensions with slits A Hall device of the present invention includes a cross-shaped magnetometric sensing surface, a pair of power terminal portions and a pair of output terminal portions. The surface is formed of a rectangular and mutually opposed extensions provided on each side of th... | 05/13/2008 |
| 7369372 | Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface betw... | 05/06/2008 |
| 7358599 | Optical semiconductor device having a lead frame and electronic equipment using same An optical semiconductor device 1a includes a lead frame 4 having an aperture 7, a submount 8 disposed on one surface of the lead frame 4 to close the aperture 7, a semiconductor optical element 3 which has an ... | 04/15/2008 |
| 7348591 | Switch element, memory element and magnetoresistive effect element A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between base ends of the carbon nanotu... | 03/25/2008 |
| 7345477 | Magnetic detection device including resistance adjusting unit In a magnetic detection device for obtaining an output from between a variable resistance element using the magnetoresistance effect and a reference resistance element, a balance between resistance values in the device can be easily adjusted in a wide range. A volta... | 03/18/2008 |
| 7339245 | Hall sensor A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A spac... | 03/04/2008 |
| 7330371 | Method and structure for generating offset fields for use in MRAM devices A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and... | 02/12/2008 |
| 7312506 | Memory cell structure A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic l... | 12/25/2007 |
| 7313013 | Spin-current switchable magnetic memory element and method of fabricating the memory element A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a ra... | 12/25/2007 |
| 7309903 | Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the ... | 12/18/2007 |
| 7302357 | Concept for compensating piezo-influences on an integrated semiconductor circuit A compensation signal, which derives the mechanical stress, which acts on an integrated semiconductor circuit, from two partial compensation signals, which are generated by semiconductor elements with different stress characteristics, can be determined in more detai... | 11/27/2007 |
| 7272033 | Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lowe... | 09/18/2007 |
| 7262449 | MTJ element for magnetic random access memory A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magneti... | 08/28/2007 |
| 7259437 | High performance spin-valve transistor The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics.... | 08/21/2007 |
| 7253490 | Magnetic sensor having vertical hall device and method for manufacturing the same A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecti... | 08/07/2007 |
| 7211199 | Magnetically-and electrically-induced variable resistance materials and method for preparing same Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced resistance (EPIR) switching effects, the latter observable at room tempera... | 05/01/2007 |
| 7208808 | Magnetic random access memory with lower switching field A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer for... | 04/24/2007 |
| 7205596 | Adiabatic rotational switching memory element including a ferromagnetic decoupling layer A magnetoresistive memory element includes a stacked structure with a ferromagnetic reference region including a fixed magnetization; a ferromagnetic free region including a free magnetization that is free to be switched between oppositely aligned directions with re... | 04/17/2007 |
