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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8030719 | Thermal sensing and reset protection for an integrated circuit chip There is provided a semiconductor package that includes a first semiconductor die mounted on a package substrate. The semiconductor package further includes a second semiconductor die mounted on the first semiconductor die and including a thermal sensing and reset p... | 10/04/2011 |
| 7936030 | Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lowe... | 05/03/2011 |
| 7719069 | Three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body In one illustrative example, a three terminal magnetic sensor includes a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a carrier substrate body which carries the... | 05/18/2010 |
| 7719070 | Non-magnetic semiconductor spin transistor A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semi... | 05/18/2010 |
| 7423329 | Semiconductor device and magneto-resistive sensor integration A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-res... | 09/09/2008 |
| 7388268 | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer compo... | 06/17/2008 |
| 7362549 | Storage device having first and second magnetic elements that interact magnetically to indicate a storage state A storage device includes a storage medium and a probe having a tip and a first magnetic element. The tip of the probe is adapted to form a dent in the storage medium. The storage device further has a second magnetic element, where the first and second magnetic elem... | 04/22/2008 |
| 7349247 | Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic s... | 03/25/2008 |
| 7339245 | Hall sensor A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A spac... | 03/04/2008 |
| 7309903 | Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the ... | 12/18/2007 |
| 7265543 | Integrated set/reset driver and magneto-resistive sensor A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one ore more reorientation elements for adjusting the magneto-resistive-sensing elements, and semicondu... | 09/04/2007 |
| 7262449 | MTJ element for magnetic random access memory A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magneti... | 08/28/2007 |
| 7244997 | Magneto-luminescent transducer An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor hav... | 07/17/2007 |
| 7239000 | Semiconductor device and magneto-resistive sensor integration A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-res... | 07/03/2007 |
| 7208808 | Magnetic random access memory with lower switching field A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer for... | 04/24/2007 |
| 7197207 | Apparatus and method for optical interconnection An apparatus (and method) for launching a modulated optical signal, includes a waveguide, an antenna structure for communicating with the waveguide and with an externally-applied optical field and having an output port, and an electrically-variable-impedance device ... | 03/27/2007 |
| 7193288 | Magnetoelectric transducer and its manufacturing method A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, an... | 03/20/2007 |
| 7173275 | Thin-film transistors based on tunneling structures and applications A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at leas... | 02/06/2007 |
| 7170173 | Magnetically lined conductors A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The corners of the conductor where the second surface and the sides meet are rounded. The rounded corners have... | 01/30/2007 |
| 7164180 | Magnetoresistive random-access memory device Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect deri... | 01/16/2007 |
| 7164181 | Spin injection devices Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region and spin precession of injected electrons in a magnetic field induced b... | 01/16/2007 |
| 7141843 | Integratable polarization rotator Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor laye... | 11/28/2006 |
| 7129534 | Magneto-resistive memory and method of manufacturing the same A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with copper and then planarized. The electrically conductive material is prov... | 10/31/2006 |
| 7126151 | Interconnected high speed electron tunneling devices An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layer... | 10/24/2006 |
| 7105852 | High speed electron tunneling devices A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it t... | 09/12/2006 |
| 7084423 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 08/01/2006 |
| 7038526 | Method and apparatus facilitating operation of a resonant tunneling device at a high frequency An apparatus includes a circuit having first and second portions which are each coupled between first and second nodes. The first portion includes a resonant tunneling device, and the second portion has a reactance that includes, at a selected frequency, a complex c... | 05/02/2006 |
| 7031569 | Optical multi-demultiplexer An arrayed-waveguide grating type optical multi-demultiplexer includes input waveguides, a first slab waveguide, a channel waveguide array, a second slab waveguide, and output waveguides. A pair of different refractive index regions, each having a refractive index d... | 04/18/2006 |
| 7019371 | Current-in-plane magnetic sensor including a trilayer structure A current-in-plane magnetic sensor comprises a sensor stack including first and second layers of ferromagnetic material, a first nano-oxide layer positioned adjacent to the first layer of ferromagnetic material, and a layer of non-magnetic material positioned betwee... | 03/28/2006 |
| 6921953 | Self-aligned, low-resistance, efficient MRAM read/write conductors The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 07/26/2005 |
| 6903429 | Magnetic sensor integrated with CMOS A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third ... | 06/07/2005 |
| 6878979 | Spin switch and magnetic storage element using it A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semicond... | 04/12/2005 |
| 6879012 | Giant planar hall effect in epitaxial ferromagnetic semiconductor devices Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the... | 04/12/2005 |
| 6867468 | Magnetic shielding for reducing magnetic interference A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator dispose... | 03/15/2005 |
| 6861718 | Spin valve transistor, magnetic reproducing head and magnetic information storage system A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a collector, a base formed on the collector, a tunnel barrier layer formed ... | 03/01/2005 |
| 6833599 | Sensitivity enhancement of semiconductor magnetic sensor A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate. One of the source and the drain includes adjoining two regions. The gat... | 12/21/2004 |
| 6787868 | Microlenses for integrated optical devices The invention provides integrated optical matching elements for use in integrated optical devices. The matching elements each comprise one or more lenses. The lenses may have low index contrast with the surrounding medium. Required dioptric power is achieved by usin... | 09/07/2004 |
| 6756649 | High speed electron tunneling device and applications A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there across, and a second arrangement between the first and second non-insul... | 06/29/2004 |
| 6734514 | Hall effect sensor A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein t... | 05/11/2004 |
| 6683359 | Hall effect device with multiple layers A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a de... | 01/27/2004 |
