Class 257/411 - Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the gate insulator is made of a composite
No. of patents: 895
Last issue date: 05/21/2013

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Number	Title	Issue Date
8445974	Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same A semiconductor structure is provided that includes at least one asymmetric gate stack located on a surface of a semiconductor structure. The at least one asymmetric gate stack includes, from bottom to top, a high k gate dielectric, a sloped threshold voltage adjust...	05/21/2013
8445975	Replacement metal gate transistors with reduced gate oxide leakage A semiconductor device has a substrate, a gate dielectric layer, and a metal gate electrode on the gate dielectric layer. The gate dielectric layer includes an oxide layer having a dielectric constant (k) greater than 4, and silicon concentrated at interfaces of the...	05/21/2013
8410559	Selectively self-assembling oxygen diffusion barrier A shallow trench isolation structure is formed in a semiconductor substrate adjacent to an active semiconductor region. A selective self-assembling oxygen barrier layer is formed on the surface of the shallow trench isolation structure that includes a dielectric oxi...	04/02/2013
8395225	Semiconductor device, an electronic device and an electronic apparatus A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 ...	03/12/2013
8390082	Gate electrode having a capping layer A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed. ...	03/05/2013
8319295	Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies A new, effective and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET), resulting in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) is p...	11/27/2012
8294224	Devices and methods to improve carrier mobility Electronic apparatus and methods of forming the electronic apparatus include a silicon oxynitride layer on a semiconductor device for use in a variety of electronic systems. The silicon oxynitride layer may be structured to control strain in a silicon channel of the...	10/23/2012
8269289	Transistor device and methods of manufacture thereof Methods of forming transistor devices and structures thereof are disclosed. A first dielectric material is formed over a workpiece, and a second dielectric material is formed over the first dielectric material. The workpiece is annealed, causing a portion of the sec...	09/18/2012
8258588	Sealing layer of a field effect transistor An exemplary structure for a gate structure of a field effect transistor comprises a gate electrode; a gate insulator under the gate electrode having footing regions on opposing sides of the gate electrode; and a sealing layer on sidewalls of the gate structure, whe...	09/04/2012
8258587	Transistor performance with metal gate The present disclosure provides a method for making a semiconductor device having metal gate stacks. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a metal gate layer on the high k dielectric material layer; form...	09/04/2012
8232612	Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances A semiconductor structure. The structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a gate dielectric region, and (iv) a gate electrode region, (v) a plural...	07/31/2012
8227874	Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes A semiconductor structure. The semiconductor structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a final gate dielectric region, (iv) a final gate electrod...	07/24/2012
8203188	Split gate oxides for a laterally diffused metal oxide semiconductor (LDMOS) An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes a first heavily doped region to represent a source region. A second heavily doped region represents a drain region of the semiconductor device. A t...	06/19/2012
8193593	Multi-layer gate dielectric A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant. ...	06/05/2012
8178934	Dielectric film with hafnium aluminum oxynitride film The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made...	05/15/2012
8154090	Non-volatile two-transistor semiconductor memory cell and method for producing the same The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally ...	04/10/2012
8154091	Integrated electronic circuit including a thin film portion based on hafnium oxide An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very ...	04/10/2012
8125038	Nanolaminates of hafnium oxide and zirconium oxide A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer ...	02/28/2012
8120124	Ultra thin TCS (SiCl) cell nitride for DRAM capacitor with DCS (SiHCl) interface seeding layer A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride see...	02/21/2012
8115262	Dielectric multilayer structures of microelectronic devices and methods for fabricating the same A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amo...	02/14/2012
8106469	Methods and apparatus of fluorine passivation The present disclosure provides methods and apparatus of fluorine passivation in IC device fabrication. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate and passivating a surface of the substrate with a mixture of hydr...	01/31/2012
8102013	Lanthanide doped TiOfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety...	01/24/2012
8084834	Semiconductor device and method for manufacturing same A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitrid...	12/27/2011
8067809	Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricatin...	11/29/2011
8063452	Semiconductor device and method for manufacturing the same A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board ...	11/22/2011
8053849	Replacement metal gate transistors with reduced gate oxide leakage Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by forming a protective layer between the gate oxide layer and metal gate electrode, thereby reducing stress. Embodiments include forming a protective layer o...	11/08/2011
8030717	Semiconductor device A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed o...	10/04/2011
8013402	Transistors with multilayered dielectric films Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises...	09/06/2011
7994591	Semiconductor device and method for manufacturing the same Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon oxynitride (SiON) layer formed on a semiconductor substrate, a hafnium silicon oxynitride (HfSiON) layer formed ...	08/09/2011
7989903	Semiconductor device with extension structure and method for fabricating the same A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source ex...	08/02/2011
7986016	Semiconductor device and associated manufacturing methodology for decreasing thermal instability between an insulating layer and a substrate According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes G...	07/26/2011
7960803	Electronic device having a hafnium nitride and hafnium oxide film The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in...	06/14/2011
7956426	Lanthanide dielectric with controlled interfaces Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielect...	06/07/2011
7936026	Semiconductor device and method of manufacturing the same A semiconductor device may include a semiconductor substrate, a diffusion layer provided over the semiconductor substrate, source and drain diffusion regions provided in upper regions of the diffusion layer, a gate insulating film provided over the source and drain ...	05/03/2011
7915694	Gate electrode having a capping layer A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed. ...	03/29/2011
7875938	LDMOS device with multiple gate insulating members An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a portion of the substrate between the source and the drain region, such that...	01/25/2011
7863695	Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semicond...	01/04/2011
7859066	Nonvolatile semiconductor memory device and method of manufacturing the same A nonvolatile semiconductor memory device has a plurality of memory strings each including a plurality of electrically rewritable memory cells serially connected. The memory string includes a columnar semiconductor portion extending in the vertical direction from a ...	12/28/2010
7834408	Semiconductor device and method for manufacturing the same It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive ele...	11/16/2010
7812412	Semiconductor device According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate i...	10/12/2010

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Class 257/411 - Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)