Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 8178875 | Nonvolatile memory device and method for manufacturing same A nonvolatile memory device includes a plurality of component memory layers stacked on one another. Each of the plurality of component memory layers includes a first wiring, a second wiring provided non-parallel to the first wiring, and a stacked structure unit prov... | 05/15/2012 |
| 8084768 | Semiconductor device A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with... | 12/27/2011 |
| 7994499 | Semiconductor probe having wedge shape resistive tip and method of fabricating the same A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of ... | 08/09/2011 |
| 7977673 | Semiconductor layer with a GaOsystem To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a β-Ga2O3 substrate 1 made of a β-Ga2O3 single crystal, a... | 07/12/2011 |
| 7875883 | Electric device using solid electrolyte The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid el... | 01/25/2011 |
| 7851790 | Isolated Germanium nanowire on Silicon fin The present invention describes a method of and an apparatus for providing a wafer, the wafer including Silicon; etching trenches in the wafer to form Silicon fins; filling Silicon Oxide in the trenches; planarizing the Silicon Oxide; recessing the Silicon Oxide to ... | 12/14/2010 |
| 7825408 | Semiconductor device A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with... | 11/02/2010 |
| 7576355 | Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which... | 08/18/2009 |
| 7528405 | Conductive memory stack with sidewall A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element. The multi-resistive state element is sandwiched between the electrodes such that the top face of the bottom electrode is in cont... | 05/05/2009 |
| 7453085 | Nano-elastic memory device and method of manufacturing the same A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predet... | 11/18/2008 |
| 7432179 | Controlling gate formation by removing dummy gate structures A method of forming semiconductor structures comprises following steps. A gate dielectric layer is formed over a substrate in an active region. A gate electrode layer is formed over the gate dielectric layer. A first photo resist is formed over the gate electrode la... | 10/07/2008 |
| 7423285 | Wire cross-point fet structure The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires 2 and 3 are disposed to ... | 09/09/2008 |
| 7420204 | Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode... | 09/02/2008 |
| 7405419 | Unidirectionally conductive materials for interconnection A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as b... | 07/29/2008 |
| 7378328 | Method of fabricating memory device utilizing carbon nanotubes A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high elect... | 05/27/2008 |
| 7351992 | Forming nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volu... | 04/01/2008 |
| 7318962 | Magnetically directed self-assembly of molecular electronic junctions comprising conductively coated ferromagnetic microparticles A device having a substrate, a pair of ferromagnetic leads on a surface of the substrate, laterally separated by a gap, and one or more ferromagnetic microparticles comprising a conductive coating at least partially within the gap. The conductive coating forms at le... | 01/15/2008 |
| 7265803 | Reconfigurable logic through deposition of organic pathways A circuit sheet comprising a substrate and wells dispersed on the substrate operable to hold conductive polymers that form circuit devices. ... | 09/04/2007 |
| 7229676 | Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by thermal transfer, particularly l... | 06/12/2007 |
| 7170089 | (4,5,9,10-Tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester, method of synthesizing thereof, and molecular electronic device using the same A new compound derivative that can be used to form a unit molecular film as a rectifier in a molecular electronic device, a new rectifying compound (4,5,9,10-tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester and its derivative ... | 01/30/2007 |
| 7164188 | Buried conductor patterns formed by surface transformation of empty spaces in solid state materials A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing the monocrystalline substrat... | 01/16/2007 |
| 7138836 | Hot carrier injection suppression circuit A method of preventing Hot Carrier Injection in input/output connections on low voltage integrated circuits. As integrated circuit voltages drop generally so does the external voltages that those circuits can tolerate. By placing input/output devices, in series, ext... | 11/21/2006 |
| 7126153 | Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode... | 10/24/2006 |
| 7022531 | Semiconductor memory device and method of fabricating the same A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory ... | 04/04/2006 |
| 7011987 | Method of fabricating organic electroluminescence panel package A packaging fabrication for an organic electroluminescence panel is disclosed. The panel comprises a printed circuit board, one or a plurality of OEL panels and a plurality of bumps, wherein the OEL is provided with poly solder interconnections in area array. The pr... | 03/14/2006 |
| 6992321 | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer lay... | 01/31/2006 |
| 6897467 | Controllable ovanic phase-change semiconductor memory device An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same, are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lowe... | 05/24/2005 |
| 6878595 | Technique for suppression of latchup in integrated circuits (ICS) The present invention relates to a technique that can be used to reduce the sensitivity of integrated circuits to a failure mechanism to which some integrated circuits (ICs) are susceptible, known as latchup. The present invention relates to a scheme for suppressing... | 04/12/2005 |
| 6797979 | Metal structure for a phase-change memory device The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilizatio... | 09/28/2004 |
| 6794677 | Semiconductor integrated circuit device and method for fabricating the same Variations in the size of a linear pattern resulting from difference in mask pattern layout are prevented by setting the perimeter of the linear pattern per unit area in a specified range irrespective of the type of a semiconductor integrated circuit device or by ad... | 09/21/2004 |
| 6781145 | Controlable ovonic phase-change semiconductor memory device An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lower... | 08/24/2004 |
| 6770524 | Method to enhance performance of thermal resistor device An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase c... | 08/03/2004 |
| 6756605 | Molecular scale electronic devices Molecular scale electronic devices are disclosed. Such devices include at least two conductive contacts, and a conductive path bridging the contacts. The conductive path is able to be written into a perturbed state by a voltage pulse, which can be of high or low con... | 06/29/2004 |
| 6674146 | Composite dielectric layers An apparatus including a contact point on a substrate; a first dielectric layer comprising a material having a dielectric constant less than five formed on the contact point, and a different second dielectric layer formed on the substrate and separated fr... | 01/06/2004 |
| 6642627 | Semiconductor chip having bond pads and multi-chip package A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is formed on the semiconductor substrate. A pad-rearrangement pat... | 11/04/2003 |
| 6621095 | Method to enhance performance of thermal resistor device An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and ... | 09/16/2003 |
| 6465884 | Semiconductor device with variable pin locations An semiconductor device including logic circuitry, a plurality of pins, and an interface unit coupling the logic circuitry to the plurality of pins, wherein the interface unit permits any of the pins to be coupled to any portion of the logic circuitry. Th... | 10/15/2002 |
| 6395590 | Capacitor plate formation in a mixed analog-nonvolatile memory device A process is provided for manufacturing a semiconductor device. A lower polycrystalline silicon layer is deposited on a substrate surface and on one or more structures that protrude from the substrate surface. A dielectric layer is formed on the lower pol... | 05/28/2002 |
| 6387726 | Method of fabricating a silicon solar cell A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped region... | 05/14/2002 |
| 6329670 | Conductive material for integrated circuit fabrication A conductive composition of titanium boronitride (TiBx Ny) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the... | 12/11/2001 |
