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| Number | Title | Issue Date |
| 8188454 | Forming a phase change memory with an ovonic threshold switch A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to... | 05/29/2012 |
| 8183553 | Resistive switching memory element including doped silicon electrode A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function ... | 05/22/2012 |
| 8178861 | Semiconductor device A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer provided above the conductive layers. Both ends of the conductive layers ... | 05/15/2012 |
| 8173989 | Resistive random access memory device and methods of manufacturing and operating the same Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one f... | 05/08/2012 |
| 8173990 | Memory array with a selector connected to multiple resistive cells An array includes a transistor comprising a first terminal, a second terminal and a third terminal; a first contact plug connected to the first terminal of the transistor; a second contact plug connected to the first terminal of the transistor; a first resistive mem... | 05/08/2012 |
| 8158966 | Phase change memory device having protective layer and method for manufacturing the same A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsor... | 04/17/2012 |
| 8154002 | Nanoscale wire-based data storage The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other... | 04/10/2012 |
| 8154003 | Resistive non-volatile memory device The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the variable resistive material layer; and a second electrode coupled to the me... | 04/10/2012 |
| 8154004 | Hybrid MRAM array structure and operation This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ... | 04/10/2012 |
| 8148709 | Magnetic device with integrated magneto-resistive stack This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular t... | 04/03/2012 |
| 8148710 | Phase-change memory device using a variable resistance structure A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first... | 04/03/2012 |
| 8143609 | Three-terminal cascade switch for controlling static power consumption in integrated circuits A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a ... | 03/27/2012 |
| 8143611 | Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when suppli... | 03/27/2012 |
| 8143610 | Semiconductor phase-change memory device A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion extending in a direction along the data line. A data contact structure is co... | 03/27/2012 |
| 8138490 | Variable resistance non-volatile memory cells and methods of fabricating same Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structur... | 03/20/2012 |
| 8138489 | Non-volatile semiconductor storage device and method of manufacturing the same A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements having a resistance-change element and a Schottky diode connected in serie... | 03/20/2012 |
| 8134139 | Programmable metallization cell with ion buffer layer A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ion... | 03/13/2012 |
| 8134140 | Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrod... | 03/13/2012 |
| 8129707 | Semiconductor integrated circuit device With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer o... | 03/06/2012 |
| 8124955 | Memory devices and methods of forming the same Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite si... | 02/28/2012 |
| 8124956 | Phase change memory devices A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of a... | 02/28/2012 |
| 8120004 | Storage node, phase change memory device and methods of operating and fabricating the same A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower ... | 02/21/2012 |
| 8120007 | Phase-change memory device, phase-change channel transistor and memory cell array A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory... | 02/21/2012 |
| 8120005 | Phase change memory devices and their methods of fabrication In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A hole penetrates the first interlayer insulating layer. A first and a sec... | 02/21/2012 |
| 8120006 | Non-volatile memory device Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory device may include at least one first electrode and at least one sec... | 02/21/2012 |
| 8115188 | Memory element and display device Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal lo... | 02/14/2012 |
| 8115187 | Triodes using nanofabric articles and methods of making the same Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also h... | 02/14/2012 |
| 8110822 | Thermal protect PCRAM structure and methods for making A memory cell as described herein includes a conductive contact and a memory element comprising programmable resistance memory material overlying the conductive contact. An insulator element extends from the conductive contact into the memory element, the insulator ... | 02/07/2012 |
| 8106376 | Method for manufacturing a resistor random access memory with a self-aligned air gap insulator A memory device including a programmable resistive memory material is described along with methods for manufacturing the memory device. A memory device disclosed herein includes top and bottom electrodes and a multilayer stack disposed between the top and bottom ele... | 01/31/2012 |
| 8106377 | Resistance change element and method of manufacturing the same In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition meta... | 01/31/2012 |
| 8106375 | Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting mater... | 01/31/2012 |
| 8097874 | Programmable resistive memory cell with sacrificial metal Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed betwe... | 01/17/2012 |
| 8093577 | Three-dimensional phase-change memory array A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements dispos... | 01/10/2012 |
| 8093576 | Chemical-mechanical polish termination layer to build electrical device isolation A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned removal of the insulation at the carbon film during a fabrication pr... | 01/10/2012 |
| 8093575 | Memristive device with a bi-metallic electrode A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive ma... | 01/10/2012 |
| 8084761 | Structure for phase change memory and the method of forming same A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change mat... | 12/27/2011 |
| 8080817 | Memory cells In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region ... | 12/20/2011 |
| 8080816 | Silver-selenide/chalcogenide glass stack for resistance variable memory The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at le... | 12/20/2011 |
| 8076665 | Semiconductor device A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer provided above the conductive layers. Both ends of the conductive layers ... | 12/13/2011 |
| 8071971 | Semiconductor device including air gap Embodiments relate to a semiconductor device, and more particularly, to a semiconductor device and a manufacturing method thereof that can reduce RC delay within the semiconductor device. Embodiments provide a semiconductor device including: a first interlayer diele... | 12/06/2011 |
