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| Number | Title | Issue Date |
| 8188460 | Bi-layer pseudo-spin field-effect transistor A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulati... | 05/29/2012 |
| 7767997 | Semiconductor device with solid electrolyte switching A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in ... | 08/03/2010 |
| 7408235 | Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wa... | 08/05/2008 |
| 7382001 | Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode i... | 06/03/2008 |
| 7351996 | Method of increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 04/01/2008 |
| 7351997 | Single photon receptor A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconduct... | 04/01/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7323711 | High-temperature superconductive device A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the secon... | 01/29/2008 |
| 7307275 | Encoding and error suppression for superconducting quantum computers The present invention involves a quantum computing structure, comprising: one or more logical qubits, which is encoded into a plurality of superconducting qubits; and each of the logical qubits comprises at least one operating qubit and at least one ancilla qubit. A... | 12/11/2007 |
| 7288783 | Optical semiconductor device and method for fabricating the same Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization dependency can be eliminated as described above. Thus, the optical sem... | 10/30/2007 |
| 7253434 | Suspended carbon nanotube field effect transistor The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and dra... | 08/07/2007 |
| 7250648 | Ferroelectric rare-earth manganese-titanium oxides Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices. ... | 07/31/2007 |
| 7250624 | Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates. Assuming the corrections of ... | 07/31/2007 |
| 7208784 | Single-electron transistor for detecting biomolecules A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate fac... | 04/24/2007 |
| 7186380 | Transistor and sensors made from molecular materials with electric dipoles A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate; (b) a die... | 03/06/2007 |
| 7166858 | Variable capacitor single-electron device The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel jun... | 01/23/2007 |
| 7157731 | Semiconductor device and its manufacture In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are formed. Side wall spacers of ... | 01/02/2007 |
| 7151274 | Dual panel type organic electroluminescent device An organic electroluminescent device includes first and second substrates facing each other and spaced apart from each other, each of the first and second substrates having a first region and a second region in a periphery of the first region; an array element on an... | 12/19/2006 |
| 7145170 | Coupled superconducting charge quantum bit device and controlled-not gate using the same A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode ... | 12/05/2006 |
| 7138651 | Logic apparatus and logic circuit A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a second single-electron device... | 11/21/2006 |
| 7135701 | Adiabatic quantum computation with superconducting qubits A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H0 and (ii) a problem Hamiltonian H | 11/14/2006 |
| 7098092 | Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor Disclosed is to a single electron device, a method of manufacturing the same, and a method of simultaneously manufacturing a single electron device and an MOS transistor. Accordingly, the single electron device of the present invention comprises, on a substrate, sem... | 08/29/2006 |
| 7067341 | Single electron transistor manufacturing method by electro-migration of metallic nanoclusters A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at ro... | 06/27/2006 |
| 7057172 | Particle detector assembly A particle detector assembly includes a substrate on which are mounted at least two superconducting quasiparticle detectors. A processing system is connected to the detectors and distinguishes between events detected simultaneously in each detector and non-simultane... | 06/06/2006 |
| 7041539 | Method for making an island of material confined between electrodes, and application to transistors A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island (30) of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the l... | 05/09/2006 |
| 7026642 | Vertical tunneling transistor The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may ... | 04/11/2006 |
| 7022287 | Single particle electrochemical sensors and methods of utilization The present invention discloses an electrochemical device for detecting single particles, and methods for using such a device to achieve high sensitivity for detecting particles such as bacteria, viruses, aggregates, immuno-complexes, molecules, or ionic species. Th... | 04/04/2006 |
| 7018881 | Suspended gate single-electron device The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (110) located over a substrate (115) and a quantum island (120) situated between the source and dr... | 03/28/2006 |
| 7019372 | Particle detector assembly A particle detector assembly includes a superconducting absorber to which is coupled superconducting tunnel junction detectors for detecting particles incident on the absorber. Each superconducting tunnel junction detector includes superconducting tunnel junction de... | 03/28/2006 |
| 7015499 | Permanent readout superconducting qubit A solid-state quantum computing structure includes a d-wave superconductor in sets of islands that clean Josephson junctions separate from a first superconducting bank. The d-wave superconductor causes the ground state for the supercurrent at each junction to be dou... | 03/21/2006 |
| 6979836 | Superconducting low inductance qubit A superconducting structure that can operate, for example, as a qubit or a superconducting switch is presented. The structure includes a loop formed from two parts. A first part includes two superconducting materials separated by a junction. The junction can, for ex... | 12/27/2005 |
| 6974971 | Matrix array devices with flexible substrates A matrix array device, for example, an active matrix display device, image sensor, or the like, comprises a matrix circuit (12, 14, 16, 18) carried on a flexible substrate (20) which circuit includes an array of semiconductor devices (12), such ... | 12/13/2005 |
| 6943368 | Quantum logic using three energy levels A method for quantum computing with a quantum system comprising a first energy level, a second energy level, and a third energy level. The first energy level and said second energy level are capable of being degenerate with respect to each other. In the method a sig... | 09/13/2005 |
| 6936841 | Methods for controlling qubits A control system for an array of qubits is disclosed. The control system according to the present invention provides currents and voltages to qubits in the array of qubits in order to perform functions on the qubit. The functions that the control system can perform ... | 08/30/2005 |
| 6872645 | Methods of positioning and/or orienting nanostructures Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and p... | 03/29/2005 |
| 6844571 | III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metal... | 01/18/2005 |
| 6833556 | Insulated gate field effect transistor having passivated schottky barriers to the channel A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-s... | 12/21/2004 |
| 6822255 | Finger SQUID qubit device A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to the interior of said loop. Eac... | 11/23/2004 |
| 6818914 | Semiconductor element and process for manufacturing the same A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noise. In order to accomplish this a control electrode is formed so as to cover the ... | 11/16/2004 |
| 6812484 | Finger squid qubit device A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to the interior of said loop. Eac... | 11/02/2004 |
