Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8169034 | Semiconductor device A semiconductor device includes: a drift layer of a first conductivity type; a base layer of a second conductivity type provided on the drift layer; an emitter layer of the first conductivity type provided in part of an upper portion of the base layer; a buffer laye... | 05/01/2012 |
| 8134212 | Implanted well breakdown in high voltage devices An n-type isolation structure is disclosed which includes an n-type BISO layer in combination with a shallow n-well, in an IC. The n-type BISO layer is formed by implanting n-type dopants into a p-type IC substrate in addition to a conventional n-type buried layer (... | 03/13/2012 |
| 8049284 | Bipolar device compatible with CMOS process technology The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector... | 11/01/2011 |
| 8026555 | Bipolar/dual FET structure having FETs with isolated channels According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate. In the bipolar/d... | 09/27/2011 |
| 7956423 | Semiconductor device with trench gate and method of manufacturing the same A method of a semiconductor device, which includes an insulated-gate FET and an electronic element, includes three steps. The first step is the step of forming a trench gate of the insulated-gate FET in a first region of a semiconductor base and a trench element-iso... | 06/07/2011 |
| 7855421 | Embedded phase-change memory and method of fabricating the same An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate... | 12/21/2010 |
| 7728388 | Power semiconductor device A power semiconductor device includes a P type silicon substrate; a deep N well in the P type silicon substrate; a P grade region in the deep N well; a P+ drain region in the P grade region; a first STI region in the P grade region; a second STI region in... | 06/01/2010 |
| 7723802 | Semiconductor device A semiconductor device includes a P diffusion region formed in the surface of an N− epitaxial layer apart from other P diffusion regions; an N+ diffusion region formed in the surface of the P diffusion region so as to be surrounded by the P d... | 05/25/2010 |
| 7723803 | Bipolar device compatible with CMOS process technology The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector... | 05/25/2010 |
| 7602025 | High voltage semiconductor device and method of manufacture thereof A drift diffusion layer of a low concentration is formed so as to surround a collector buffer layer having a relatively high concentration including a high-concentration collector diffusion layer in a plane structure. Thereby, current crowding in corner portions of ... | 10/13/2009 |
| 7586161 | Edge structure with voltage breakdown in the linear region One aspect of the invention relates to an edge structure for a semiconductor component having two electrodes arranged opposite one another on opposite sides of a semiconductor body having a doped zone of the first charge carrier type. The semiconductor body has at l... | 09/08/2009 |
| 7560782 | Transistor structure with high input impedance and high current capability An integrated transistor device is formed in a chip of semiconductor material having an electrical-insulation region delimiting an active area accommodating a bipolar transistor of vertical type and a MOSFET of planar type, contiguous to one another. The active area... | 07/14/2009 |
| 7439558 | Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base re... | 10/21/2008 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7408434 | Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package An inductor embedded in a substrate, including a substrate, a coil electrode formed by filling a metal in a spiral hole formed on the substrate, an insulation layer formed on the substrate, and an external connection pad formed on the insulation layer to be connecte... | 08/05/2008 |
| 7372098 | Low power flash memory devices A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell transistors. These electrons are accelerated in a vertical electric field and ... | 05/13/2008 |
| 7365372 | Semiconductor device and method for manufacturing semiconductor device The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to eac... | 04/29/2008 |
| 7361571 | Method for fabricating a trench isolation with spacers A method for forming a shallow trench isolation (STI) in a semiconductor device, is presented. In one embodiment, the method includes successively forming a pad oxide and a pad nitride on a silicon substrate, successively etching the pad nitride, the pad oxide, and ... | 04/22/2008 |
| 7349217 | IC socket assembly The IC socket assembly includes the heat sink for abutting the upper surface of an IC package to dissipate heat generated thereby, and a fixing member for fixing the heat sink to the housing. The fixing member includes: a frame, mounted on a surface of the circuit b... | 03/25/2008 |
| 7339236 | Semiconductor device, driver circuit and manufacturing method of semiconductor device The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS tr... | 03/04/2008 |
| 7336118 | Inverter apparatus To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided betwe... | 02/26/2008 |
| 7332358 | MOSFET temperature sensing A MOSFET has its gate voltage controlled to provide a constant drain current of the MOSFET, for example to limit inrush current for charging a capacitance of a power supply arrangement. A decrease in the gate voltage supplied to the MOSFET, corresponding to an incre... | 02/19/2008 |
| 7329570 | Method for manufacturing a semiconductor device An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a P-well and an N-well for high voltage (HV) devices and a first well in a low voltage/medium voltage (LV/MV) region for a logic device, ... | 02/12/2008 |
| 7326996 | Semiconductor device and manufacturing process thereof The semiconductor device according to one of the aspects of the present invention includes a semiconductor substrate of a first conductivity type, having upper and lower surfaces. A collector region of a second conductivity type is formed on the lower surface of the... | 02/05/2008 |
| 7327026 | Vacuum diode-type electronic heat pump device and electronic equipment having the same An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first se... | 02/05/2008 |
| 7319257 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/15/2008 |
| 7310458 | Stacked module systems and methods The present invention provides methods for constructing stacked circuit modules and precursor assemblies with flexible circuitry. Using the methods of the present invention, a single set of flexible circuitry whether articulated as one or two flex circuits may be em... | 12/18/2007 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7301195 | Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same A semiconductor memory device comprises a substrate; a semiconductor layer of a first conductive type isolated from the substrate by an insulator layer; a memory transistor having a gate electrode, a drain and a source regions of a second conductive type formed in t... | 11/27/2007 |
| 7294552 | Electrical contact for a MEMS device and method of making A method for making a subsurface electrical contact on a micro-electrical-mechanical-systems (MEMS) device. The contact is formed by depositing a layer of polycrystalline silicon onto a surface within a cavity buried under a device silicon layer. The polycrystalline... | 11/13/2007 |
| 7285837 | Electrostatic discharge device integrated with pad A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. F... | 10/23/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7280328 | Semiconductor integrated circuit device An inventive semiconductor integrated circuit device includes: an external connection terminal 1; an electrostatic discharge protection circuit 2; an output circuit 3; an output prebuffer circuit 4; an input prebuffer circuit 5; an... | 10/09/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7268643 | Apparatus, system and method capable of radio frequency switching using tunable dielectric capacitors An embodiment of the present invention provides an apparatus, comprising a radio frequency switch capable of using tunable dielectric capacitors as the switching element. The apparatus may further comprise a cross connector connecting a plurality of ports and wherei... | 09/11/2007 |
| 7263344 | Method for reducing IM2 noise in a down conversion circuit The present invention relates generally to communications, and more specifically to a method and apparatus for minimizing DC offset and second-order modulation products (IM2 noise) while demodulating RF signals. The principle of the invention can be applied to diffe... | 08/28/2007 |
| 7259442 | Selectively doped trench device isolation A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment includes a semiconductor substrate having a trench. A thin field oxide layer is grown on the side walls of the trench, and the trench is filled with a he... | 08/21/2007 |
| 7256456 | SOI substrate and semiconductor integrated circuit device A semiconductor IC device includes a base substrate comprising P−-type silicon, a first P+-type silicon layer is provided on the base substrate, and an N+-type silicon layer and a second P+-type silicon layer are provide... | 08/14/2007 |
| 7256445 | Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions An EEPROM memory cell uses an emitter polysilicon film for fabricating shallow source/drain regions to increase a breakdown voltage of the wells. The wells are fabricated to be approximately 100 nm (0.1 micrometers (μm)) in depth with a breakdown voltage of approxi... | 08/14/2007 |
