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| Number | Title | Issue Date |
| 7605431 | Electrostatic discharge protection apparatus for semiconductor devices The present invention provides several embodiments with layout patterns for ESD protection. An apparatus with a layout pattern may be configured to protect I/O pads or the power rail. The layout pattern may designed to increase the current paths for ESD stress curre... | 10/20/2009 |
| 7569894 | Semiconductor device with NMOS transistors arranged continuously A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS transistors are electrically isolated from each other by a device is... | 08/04/2009 |
| 7547948 | Semiconductor device including bipolar junction transistor with protected emitter-base junction A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second ... | 06/16/2009 |
| 7518194 | Current amplifying integrated circuit Present invention proposes a dramatic improvement of CMOS IC technology by providing high speed bipolar current amplifiers compatible with CMOS technological process while retaining the footprint compatible to one of standard CMOS devices. This invention promises fu... | 04/14/2009 |
| 7514754 | Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a second buried layer. The first and second epitaxial layers are disposed ... | 04/07/2009 |
| 7511346 | Design of high-frequency substrate noise isolation in BiCMOS technology A high-frequency noise isolation structure and a method for forming the same are provided. The noise isolation structure isolates a first device region and a second device region over a semiconductor substrate. The noise isolation structure preferably includes a sin... | 03/31/2009 |
| 7498639 | Integrated BiCMOS semiconductor circuit An integrated BiCMOS semiconductor circuit has active moat areas in silicon. The active moat areas include electrically active components of the semiconductor circuit, which comprise active window structures for base and/or emitter windows. The integrated BiCMOS sem... | 03/03/2009 |
| 7476942 | SOI lateral semiconductor device and method of manufacturing the same The SOI lateral semiconductor device includes a semiconductor region of a first conductivity type, a buried oxide film layer in the semiconductor region, a thin active layer on the buried oxide film layer, an anode region in the thin active layer, and a drain layer ... | 01/13/2009 |
| 7449754 | Single poly BiCMOS flash cell with floating body A BiCMOS integrated circuit (IC) includes a floating gate-type non-volatile memory (NVM) device that uses the polycrystalline silicon gate of a CMOS FET and the P-base and N-emitter diffusions of a bipolar transistor to provide an isolated P-type body and N-type sou... | 11/11/2008 |
| 7439140 | Formation of standard voltage threshold and low voltage threshold MOSFET devices Wells are formed in a substrate where standard Vt and low Vt devices of both a first and second type are to be fabricated. Wells defining the locations of first type standard Vt devices are masked, and a first voltage threshold implant adjustment is performed within... | 10/21/2008 |
| 7400017 | Reverse conducting semiconductor device and a fabrication method thereof To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including; a second conductive type ba... | 07/15/2008 |
| 7372109 | Diode and applications thereof A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer. Isolation regions are adjacent to two sides of the buried layer, each... | 05/13/2008 |
| 7361552 | Semiconductor integrated circuit including a DRAM and an analog circuit A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation f... | 04/22/2008 |
| 7358596 | Device isolation for semiconductor devices Exemplary embodiments of the present invention disclose a semiconductor assembly having at least one isolation structure formed. The semiconductor assembly comprises: a first trench in a semiconductive substrate; a second trench extending the overall trench depth in... | 04/15/2008 |
| 7358130 | Method for monitoring lateral encroachment of spacer process on a CD SEM A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measu... | 04/15/2008 |
| 7355248 | Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gat... | 04/08/2008 |
| 7349251 | Integrated memory circuit arrangement A memory circuit arrangement includes a switching element per column that can be used to connect or disconnect two bit lines for memory cells of a column. The switching element leads to a reduction of the chip area and/or to an improvement in the electronic properti... | 03/25/2008 |
| 7341905 | Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence consists of sixteen specific mask steps that permit a variety of bipolar/CMOS/DMOS devices to be fabr... | 03/11/2008 |
| 7329925 | Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f... | 02/12/2008 |
| 7329566 | Semiconductor device and method of manufacture A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) (100, 200) that includes a semiconductor substrate (110) having a first conductivity type and buried semiconductor region (115) having a s... | 02/12/2008 |
| 7329570 | Method for manufacturing a semiconductor device An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a P-well and an N-well for high voltage (HV) devices and a first well in a low voltage/medium voltage (LV/MV) region for a logic device, ... | 02/12/2008 |
| 7329583 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 02/12/2008 |
| 7323750 | Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrat... | 01/29/2008 |
| 7321257 | Semiconductor device capable of detecting an open bonding wire using weak current An IC chip has a series regulator built therein. A battery voltage is applied to an input pin. An output of a transistor constituting the series regulator occurs at an output pin via an output pad. A feedback signal derived from an output voltage occurs at an end of... | 01/22/2008 |
| 7309883 | Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a well bias voltage. The second well is adjacent to the first well, an... | 12/18/2007 |
| 7307328 | Semiconductor device with temperature sensor A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor ... | 12/11/2007 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7304353 | Formation of standard voltage threshold and low voltage threshold MOSFET devices Wells are formed in a substrate where standard Vt and low Vt devices of both a first and second type are to be fabricated. Wells defining the locations of first type standard Vt devices are masked, and a first voltage threshold implant adjustment is performed within... | 12/04/2007 |
| 7304334 | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided ... | 12/04/2007 |
| 7304354 | Buried guard ring and radiation hardened isolation structures and fabrication methods Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isol... | 12/04/2007 |
| 7285838 | Semiconductor device and method of manufacturing the same A semiconductor device includes a first n-type source/drain region 48a and a second p-type source/drain region 48b formed on a semiconductor substrate 20 away from side surfaces of first and second gate electrodes 39a, | 10/23/2007 |
| 7285830 | Lateral bipolar junction transistor in CMOS flow An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for c... | 10/23/2007 |
| 7285837 | Electrostatic discharge device integrated with pad A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. F... | 10/23/2007 |
| 7283338 | Power supply device for low-voltage electronic residual current circuit breakers A power supply device for low-voltage electronic residual current circuit breakers includes an electronic rectifier stage suitable to receive in input a mains voltage and to generate a first unipolar voltage whose value depends on the value of the mains voltage, and... | 10/16/2007 |
| 7279931 | High voltage tolerance output stage An output stage structure includes first and second PMOS transistors and first and second NMOS transistors, wherein the MOS transistors are manufactured with a twin well process. The first PMOS transistor has a source coupled to a supply voltage (VDD), and a gate co... | 10/09/2007 |
| 7279378 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/09/2007 |
| 7279753 | Floating base bipolar ESD devices The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated circuit, a floating base, and a grounded emitter. When an ESD pulse hits t... | 10/09/2007 |
| 7279399 | Method of forming isolated pocket in a semiconductor substrate A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 10/09/2007 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 7274317 | Transmitter using vertical BJT A transmitter having a vertical BJT, capable of reducing power consumption, carrier leakage of a local oscillator and an error vector magnitude (EVM), is disclosed. In the transmitter, vertical BJTs implemented by a standard triplex well CMOS process are used in a f... | 09/25/2007 |