Did You Know...
...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8148783 | Semiconductor device Semiconductor device including semiconductor layer, first impurity region on surface layer portion of semiconductor layer, body region at interval from first impurity region, second impurity region on surface layer portion of body region, field insulating film at in... | 04/03/2012 |
| 7893500 | High voltage GaN transistors A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first f... | 02/22/2011 |
| 7893499 | MOS transistor with gate trench adjacent to drain extension field insulation An integrated circuit containing an MOS transistor with a trenched gate abutting an isolation dielectric layer over a drift region. The body well and source diffused region overlap the bottom surface of the gate trench. An integrated circuit containing an MOS transi... | 02/22/2011 |
| 7868388 | Embedded memory in a CMOS circuit and methods of forming the same In some aspects, a memory circuit is provided that includes (1) a two-terminal memory element formed on a substrate; and (2) a CMOS transistor formed on the substrate and adapted to program the two-terminal memory element. The two-terminal memory element is formed b... | 01/11/2011 |
| 7781842 | Semiconductor device and method for producing it A semiconductor device which has a semiconductor body and a method for producing it. At the semiconductor body, a first electrode which is electrically connected to a first near-surface zone of the semiconductor body and a second electrode which is electrically conn... | 08/24/2010 |
| 7777278 | Lateral semiconductor component with a drift zone having at least one field electrode A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a firs... | 08/17/2010 |
| 7692248 | Semiconductor device and method of fabricating the same A semiconductor device comprising a substrate having a well region, at least one well pickup region formed on the substrate to surround the well pickup region, a first drain region formed on the substrate to be positioned on one side of the source region, and a firs... | 04/06/2010 |
| 7582939 | Semiconductor diode, electronic component and voltage source inverter The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison t... | 09/01/2009 |
| 7439590 | Semiconductor device A semiconductor device features connecting gate patterns of all transistors to a N+ or +P junction by the first connected wiring layer to prevent degradation of characteristics of the semiconductor device which results from plasma damages during a process. In order ... | 10/21/2008 |
| 7411248 | Vertical unipolar component periphery A vertical unipolar component formed in a semiconductor substrate, comprising vertical fingers made of a conductive material surrounded with silicon oxide, portions of the substrate being present between the fingers and the assembly being coated with a conductive la... | 08/12/2008 |
| 7375400 | Field emission display device An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, a... | 05/20/2008 |
| 7375398 | High voltage FET gate structure A FET device for operation at high voltages includes a substrate, a first well and a second well within the substrate that are doped with implants of a first type and second type, respectively. The first and second wells define a p-n junction. A field oxide layer wi... | 05/20/2008 |
| 7368785 | MOS transistor device structure combining Si-trench and field plate structures for high voltage device A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elon... | 05/06/2008 |
| 7368299 | MTJ patterning using free layer wet etching and lift off techniques Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is pat... | 05/06/2008 |
| 7345326 | Electric signal transmission line An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a metal electrode through which an electric signals flows. The ground ... | 03/18/2008 |
| 7332778 | Semiconductor device and method of manufacturing same To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate ( | 02/19/2008 |
| 7323752 | ESD protection circuit with floating diffusion regions This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD eve... | 01/29/2008 |
| 7321504 | Static random access memory cell A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter h... | 01/22/2008 |
| 7304356 | IGBT or like semiconductor device of high voltage-withstanding capability A multiple-cell insulated-gate-bipolar-transistor chip is disclosed which includes a semiconductor substrate having formed therein a p+-type collector region and an n−-type base region, with a pn junction therebetween. An annular trench is et... | 12/04/2007 |
| 7301179 | Semiconductor device having a high breakdown voltage transistor formed thereon An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. A... | 11/27/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7286383 | Bit line sharing and word line load reduction for low AC power SRAM architecture In a SRAM structure, space and power saving is achieved by providing row and column select lines to select a specific bit cell, and reducing the number of bit lines in the structure used for writing to and reading from the bit cells. The number of bit lines is reduc... | 10/23/2007 |
| 7283089 | Radar system and car radar system A power supply apparatus controls the gate and drain power supplies at the rise time so that an output voltage of the gate power rises earlier than that of the drain power supply. Another power supply control apparatus controls the gate and drain power supplies at t... | 10/16/2007 |
| 7265740 | Suppression of leakage current in image acquisition In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D1 and D2 is progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photo... | 09/04/2007 |
| 7250630 | Electronic devices formed of high-purity molybdenum oxide The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present such a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage... | 07/31/2007 |
| 7205614 | High density ROM cell A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a fi... | 04/17/2007 |
| 7186924 | Dielectric structure for printed circuit board traces A trace cover suitable for shielding a conductive trace on a top layer of a circuit board. The trace cover includes a dielectric body disposed substantially over the conductive trace, side shielding perpendicular to the direction of the conductive trace and substant... | 03/06/2007 |
| 7173796 | Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same In one illustrative example of the invention, a spin valve sensor of a magnetic head has a sensor stack structure which includes a free layer structure and an antiparallel (AP) pinned layer structure separated by a spacer layer. A capping layer structure formed over... | 02/06/2007 |
| 7170126 | Structure of vertical strained silicon devices A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces res... | 01/30/2007 |
| 7157782 | Electrically-programmable transistor antifuses Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. The antifuse transistor has source, drain, gate, and substrate terminals. The gate has an associated gate oxide. In its u... | 01/02/2007 |
| 7148559 | Substrate engineering for optimum CMOS device performance An integrated semiconductor structure having different types of complementary metal oxide semiconductor devices (CMOS), i.e., PFETs and NFETs, located atop a semiconductor substrate, wherein each CMOS device is fabricated such that the current flow for each device i... | 12/12/2006 |
| 7141831 | Snapback clamp having low triggering voltage for ESD protection An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body adjacent the first P type region so as to form a PN junction having a widt... | 11/28/2006 |
| 7142046 | Current sharing using gate modulated diodes A system includes an output terminal at which power is provided to a load, wherein the load defines a load current. A respective power supply can be coupled to each of a plurality of input terminals for providing current to the load. Each of a plurality of gate modu... | 11/28/2006 |
| 7115921 | Nano-scaled gate structure with self-interconnect capabilities Gate conductors on an integrated circuit are formed with enlarged upper portions which are utilized to electrically connect the gate conductors with other devices. A semiconductor device comprises a gate conductor with an enlarged upper portion which electrically co... | 10/03/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7087958 | Termination structure of DMOS device In one embodiment of the invention, a semiconductor device set includes at least one trench-typed MOSFET and a trench-typed termination structure. The trench-typed MOSFET has a trench profile and includes a gate oxide layer in the trench profile, and a polysilicon l... | 08/08/2006 |
| 7075121 | Magnetic tunneling junction element having thin composite oxide film A tunneling junction element comprises: a substrate; a lower conductive layer formed on the substrate; a first oxide layer formed on the lower conductive layer and having a non-stoichiometric composition;a second oxide layer formed on the first oxide layer and havin... | 07/11/2006 |
| 7056761 | Avalanche diode with breakdown voltage controlled by gate length In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate. ... | 06/06/2006 |
| 6987299 | High-voltage lateral transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 01/17/2006 |
| 6979879 | Trim zener using double poly process In a zener zap diode device and a system for making such a device using a double poly process, p+ and n+regions are formed in a tub by means of p-doped and n-doped polysilicon regions, and a p-n junction is formed between the p+ region and an n-tub or between the n+... | 12/27/2005 |
