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| Number | Title | Issue Date |
| 7795610 | Semiconductor light emitting device The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the ... | 09/14/2010 |
| 7423284 | Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type A... | 09/09/2008 |
| 7319057 | Phase change material memory device A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the f... | 01/15/2008 |
| 7314776 | Method to manufacture a phase change memory Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method ma... | 01/01/2008 |
| 7276725 | Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of a substrate so as to expose a... | 10/02/2007 |
| 7259437 | High performance spin-valve transistor The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics.... | 08/21/2007 |
| 7176483 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin ... | 02/13/2007 |
| 7140102 | Electrode sandwich separation Materials bonded together are separated using electrical current, thermal stresses, mechanical force, any combination of the above methods, or any other application or removal of energy until the bonds disappear and the materials are separated. In one embodiment the... | 11/28/2006 |
| 7141843 | Integratable polarization rotator Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor laye... | 11/28/2006 |
| 7122735 | Quantum well energizing method and apparatus A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer that catalyzes a chemical reaction and captures hot electrons and hot phonons generated by ... | 10/17/2006 |
| 7112484 | Thin film diode integrated with chalcogenide memory cell An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive p... | 09/26/2006 |
| 7078687 | Thin film analyzing method The present invention provides is a thin film analyzing method which can be applied to various fields, and which makes it possible to detect and analyze in a simple manner, with high precision, a distribution of a specific component in a thin film formed on a suppor... | 07/18/2006 |
| 7049009 | Silver selenide film stoichiometry and morphology control in sputter deposition A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 m... | 05/23/2006 |
| 7026642 | Vertical tunneling transistor The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may ... | 04/11/2006 |
| 7002174 | Characterization and measurement of superconducting structures A structure comprising a tank circuit inductively coupled to a flux qubit or a phase qubit. In some embodiments, a low temperature preamplifier is in electrical communication with the tank circuit. The tank circuit comprises an effective capacitance and an effective... | 02/21/2006 |
| 6999806 | High temperature superconducting josephson junctin, superconducting electronic device provided with the former and method of manufacturing high temperature superconducting josephson junction A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements selected from the group of Ba, Sr... | 02/14/2006 |
| 6995390 | Switching device using superlattice without any dielectric barriers A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected based on “Dimensional Crossov... | 02/07/2006 |
| 6989569 | MOS transistor with a controlled threshold voltage A MOS transistor with a controlled threshold voltage includes a SOI which includes a substrate composed of a semi-conducting material, a single crystal layer composed of a semi-conducting material and an insulating layer interposed between the substrate and the sing... | 01/24/2006 |
| 6974965 | Agglomeration elimination for metal sputter deposition of chalcogenides A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced, and machine readable media c... | 12/13/2005 |
| 6971165 | Method for fabrication of separators for electrode pairs in diodes An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third materi... | 12/06/2005 |
| 6949453 | Agglomeration elimination for metal sputter deposition of chalcogenides A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced, and machine readable media c... | 09/27/2005 |
| 6849868 | Methods and apparatus for resistance variable material cells The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver ... | 02/01/2005 |
| 6835949 | Terahertz device integrated antenna for use in resonant and non-resonant modes and method An assembly includes a device for receiving at least one input to produce an output. An antenna supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna supports a selected one of the input and ... | 12/28/2004 |
| 6818918 | Josephson junctions with a continually graded barrier A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a firs... | 11/16/2004 |
| 6734455 | Agglomeration elimination for metal sputter deposition of chalcogenides A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced, and machine readable media c... | 05/11/2004 |
| 6734454 | Internally shunted Josephson junction device A Josephson junction has inherent resistance which effectively shunts the junction and thereby obviates a separate shunt resistor and thus reduces surface area in an integrated circuit including a plurality of Josephson junctions. The Josephson junction comprises a ... | 05/11/2004 |
| 6674090 | Structure and method for planar lateral oxidation in active An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a def... | 01/06/2004 |
| 6642608 | MoNx resistor for superconductor integrated circuit A superconductor integrated circuit (10) includes a silicon substrate (12) a niobium ground layer (14), an anodized niobium first ground insulator layer (16), a second ground insulator layer (22), a molybdenum nitrogen (MoNx) resistor (18) prov... | 11/04/2003 |
| 6627915 | Shaped Josephson junction qubits A superconducting qubit is presented. The qubit is a shaped long Josephson junction with a magnetic fluxon such that, in the presence of an externally applied magnetic field, a fluxon potential energy function indicating a plurality of pinning sites in th... | 09/30/2003 |
| 6580102 | Four-terminal system for reading the state of a phase qubit Quantum computing systems and methods that use opposite magnetic moment states read the state of a qubit by applying current through the qubit and measuring a Hall effect voltage across the width of the current. For reading, the qubit is grounded to freez... | 06/17/2003 |
| 6541789 | High temperature superconductor Josephson junction element and manufacturing method for the same In a method of manufacturing a Josephson junction, a first superconductive layer is formed on a substrate. An insulating film is formed on the first superconductive layer. The insulating film is etched to have an inclination portion. The first superconduc... | 04/01/2003 |
| 6521961 | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-bar... | 02/18/2003 |
| 6426514 | Dual non-parallel electronic field electro-optic effect device The present invention is for an improved modulator and detection device that use reversed biased diodes containing not intentionally doped (NID) optically active regions sandwiched between conductive layers of p-doped and n-doped semiconductor layers. A p... | 07/30/2002 |
| 6344659 | Superconducting transistor arrangement and a method relating thereto The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base electrode thus formi... | 02/05/2002 |
| 6188919 | Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions A SNS Josephson junction (10) is provided for use in a superconducting integrated circuit. The SNS junction (10) includes a first high temperature superconducting (HTS) layer (14) deposited and patterned on a substrate (18), such that the first HTS layer ... | 02/13/2001 |
| 6157044 | Tunnel junction type josephson device A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide ... | 12/05/2000 |
| 6087687 | MISFET device with ferroelectric gate insulator A semiconductor device is provided, which is readily and correctly designed even when the semiconductor device is further miniaturized. This device includes a semiconductor substrate, a source region and a drain region formed to be apart from each other i... | 07/11/2000 |
| 6051846 | Monolithic integrated high-Tc superconductor-semiconductor structure A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferabl... | 04/18/2000 |
| 6011981 | Oxide superconductor multilayered film and oxide superconductor josephson device An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces... | 01/04/2000 |
| 5965900 | Tunnel-effect superconductive detector cell The invention relates to a detector cell comprising tunnel-effect superconductive devices organized in a two-dimensional array and placed on a common substrate, each superconductive device comprising a tunnel-effect superconductive junction and being elec... | 10/12/1999 |
