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| Number | Title | Issue Date |
| 8188538 | Semiconductor device and method of manufacturing semiconductor device The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom s... | 05/29/2012 |
| 8178922 | Trench MOSFET with ultra high cell density and manufacture thereof A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench... | 05/15/2012 |
| 8178920 | Semiconductor device and method of forming the same A semiconductor device and a method of forming thereof has a base body has a field stopping layer, a drift layer, a current spreading layer, a body region, and a source contact region layered in the order on a substrate. A trench that reaches the field stopping laye... | 05/15/2012 |
| 8178921 | Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the... | 05/15/2012 |
| 8178923 | Power semiconductor device having low gate input resistance A power semiconductor device having low gate input resistance and a manufacturing method thereof are provided. The power semiconductor device includes a substrate, at least a trench transistor, a conductive layer, a metal contact plug, an insulating layer, an interl... | 05/15/2012 |
| 8174065 | Semiconductor device having vertical transistor and method of fabricating the same There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dime... | 05/08/2012 |
| 8174064 | Semiconductor device and method for forming the same A semiconductor device includes a conductive pattern formed on the substrate; an interlayer dielectric layer formed on the conductive pattern; a contact plug connected to the conductive pattern extending through the interlayer dielectric layer; a semiconductor layer... | 05/08/2012 |
| 8169021 | Trench gate semiconductor device and method of manufacturing the same A trench gate semiconductor device including: a semiconductor layer having a first conductivity type; a first diffusion region having a second conductivity type having a planar structure on the semiconductor layer; a second diffusion region having the first conducti... | 05/01/2012 |
| 8164138 | Recessed channel transistor A recessed channel transistor includes an isolation layer provided in a semiconductor substrate to define an active region. A trench is provided in the semiconductor substrate to extend across the active region. A gate insulation layer covers a sidewall and a bottom... | 04/24/2012 |
| 8164139 | MOSFET structure with guard ring A trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure with guard ling, includes: a substrate including an epi layer region on the top thereof a plurality of source and body regions formed in the epi layer; a metal layer including a plurality ... | 04/24/2012 |
| 8164140 | Method for fabricating semiconductor memory device A method for manufacturing a semiconductor device comprises forming a first spacer layer at sidewalls of one or more gate electrodes, forming a trench by etching an isolation insulating layer exposed between the gate electrodes, forming a second spacer layer on side... | 04/24/2012 |
| 8159025 | Gate electrode in a trench for power MOS transistors A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isola... | 04/17/2012 |
| 8159024 | High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance In one aspect, a lateral MOS device is provided. The lateral MOS device includes a gate electrode disposed at least partially in a gate trench to apply a voltage to a channel region, and a drain electrode spaced from the gate electrode, and in electrical communicati... | 04/17/2012 |
| 8154074 | Silicon carbide semiconductor device and manufacturing method of the same A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench v... | 04/10/2012 |
| 8154073 | Semiconductor device A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in... | 04/10/2012 |
| 8148775 | Methods of providing electrical isolation and semiconductor structures including same Methods of isolating gates in a semiconductor structure. In one embodiment, isolation is achieved using a spacer material in combination with fins having substantially vertical sidewalls. In another embodiment, etch characteristics of various materials utilized in f... | 04/03/2012 |
| 8143668 | SiGe MOSFET semiconductor device with sloped source/drain regions Performance of a semiconductor device having a MIS transistor is improved. A semiconductor device includes: a pair of source/drain regions each formed by stacking a semiconductor layer on a main surface of a silicon substrate; a sidewall insulating film covering eac... | 03/27/2012 |
| 8138542 | Semiconductor device and manufacturing method of the semiconductor device A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type pa... | 03/20/2012 |
| 8125027 | Semiconductor device having trenches extending through channel regions A semiconductor device includes an n-type semiconductor substrate, an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately, p-type cha... | 02/28/2012 |
| 8125024 | Trench MOSgated device with deep trench between gate trenches A trench gated MOSFET especially for operation in high radiation environments has a deep auxiliary trench located between the gate trenches. A boron implant is formed in the walls of the deep trench (in an N channel device); a thick oxide is formed in the bottom of ... | 02/28/2012 |
| 8125025 | Semiconductor device A semiconductor device (such as a MOSFET) can prevent a lowering in the reliability of a gate insulating film and can cope with a finer trench pattern. The MOSFET has a plurality of trenches penetrating a p−-type doped region and a gate electrode formed... | 02/28/2012 |
| 8125026 | Gate of trench type MOSFET device and method for forming the gate A gate of a trench type MOSFET device and a method of forming a gate. A gate of a trench type MOSFET device may include a gate oxide film formed on and/or over a trench type gate poly such that parasitic capacitance may be produced in a gate poly. An electric field ... | 02/28/2012 |
| 8120101 | Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally pe... | 02/21/2012 |
| 8120100 | Overlapping trench gate semiconductor device An overlapping trench gate semiconductor device includes a semiconductor substrate, a plurality of shallow trenches disposed on the semiconductor substrate, a first conductive layer disposed in the shallow trenches, a plurality of deep trenches respectively disposed... | 02/21/2012 |
| 8120098 | Semiconductor device and power converter using the same A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift n− layer 110 is exposed to its main ... | 02/21/2012 |
| 8120102 | Semiconductor device A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate e... | 02/21/2012 |
| 8120099 | Semiconductor device with buried gate and method for fabricating the same A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a trench formed in a substrate, a junction region formed in the substrate on both sides of the trench, a first gate insulation layer formed on the surface of th... | 02/21/2012 |
| 8115251 | Recessed gate channel with low Vt corner A recessed gate FET device includes a substrate having an upper and lower portions, the lower portion having a reduced concentration of dopant material than the upper portion; a trench-type gate electrode defining a surrounding channel region and having a gate diele... | 02/14/2012 |
| 8110871 | Semiconductor device with recess and fin structure The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the ac... | 02/07/2012 |
| 8110872 | Semiconductor device with transistor, conductive pad, and contact A semiconductor device includes a transistor, a conductive pad, and a contact. The conductive pad is electrically connected to the transistor. The conductive pad may include, but is not limited to, a first region and a second region. The contact is electrically conn... | 02/07/2012 |
| 8106446 | Trench MOSFET with deposited oxide A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body. ... | 01/31/2012 |
| 8101993 | MSD integrated circuits with shallow trench A trench MOSFET device with embedded Schottky rectifier, gate-drain and gate-source diodes on single chip is formed with shallow trench structure to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse le... | 01/24/2012 |
| 8101994 | Semiconductor device having multiple fin heights A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to... | 01/24/2012 |
| 8097915 | Semiconductor memory device A semiconductor memory device comprises a plurality of memory cells, each memory cell having a respective transistor. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, wher... | 01/17/2012 |
| 8097916 | Method for insulating a semiconducting material in a trench from a substrate A method for insulating a semiconducting material in a trench from a substrate, wherein the trench is formed in the substrate and comprising an upper portion and a lower portion, the lower portion being lined with a first insulating layer and filled, at least partia... | 01/17/2012 |
| 8093653 | Trench metal oxide-semiconductor transistor and fabrication method thereof A fabrication method of a trench metal oxide-semiconductor (MOS) transistor is provided. After the gate trenches are formed in the epitaxial layer, impurities of a first conductive type are implanted into the epitaxial layer by using a blanket implantation process. ... | 01/10/2012 |
| 8093654 | Vertical transistor component A method for producing a vertical transistor component includes providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extends as far ... | 01/10/2012 |
| 8089123 | Semiconductor device comprising transistor structures and methods for forming same A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielec... | 01/03/2012 |
| 8084813 | Short gate high power MOSFET and method of manufacture A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a c... | 12/27/2011 |
| 8084814 | Semiconductor device and method of producing the same A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear s... | 12/27/2011 |
