Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 8188537 | Semiconductor device and production method therefor It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; one of a drain region and a source region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the s... | 05/29/2012 |
| 8183627 | Hybrid fin field-effect transistor structures and related methods Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide. ... | 05/22/2012 |
| 8183628 | Semiconductor structure and method of fabricating the semiconductor structure In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type an... | 05/22/2012 |
| 8169020 | Semiconductor device with buried bit lines and method for fabricating the same A semiconductor device includes a substrate having trenches, buried bit lines formed in the substrate, and including a metal silicide layer and a metallic layer, wherein the metal silicide layer contacts sidewalls of the trenches and the metallic layer is formed ove... | 05/01/2012 |
| 8164137 | Multiple-gate MOS transistor using Si substrate and method of manufacturing the same Provided are a multiple-gate MOS (metal oxide semiconductor) transistor and a method of manufacturing the same. The transistor includes a single crystalline active region having a channel region having an upper portion of a streamlined shape (∩) obtained by patter... | 04/24/2012 |
| 8125023 | Vertical type power semiconductor device having a super junction structure In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the out... | 02/28/2012 |
| 8125022 | Semiconductor device and method of manufacturing the same A semiconductor device 1 includes a first semiconductor region 2B and a second semiconductor region 5 provided on a main surface of a substrate 2, being apart from each other and having first conductivity; a third semiconductor region ... | 02/28/2012 |
| 8120096 | Power semiconductor device and method of manufacturing the same A power semiconductor device capable of transmitting gate signals in all directions (e.g., up-/down-ward/right-/left-ward) on a plane and a method of manufacturing the same. The power semiconductor device includes first conductive regions, formed to a predetermined ... | 02/21/2012 |
| 8120097 | Method and apparatus for controlling a circuit with a high voltage sense device A control circuit with a high voltage sense device. In one embodiment, a circuit includes a first transistor disposed in a first substrate having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage. A voltage... | 02/21/2012 |
| 8115250 | Semiconductor device and manufacturing method of the same Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity t... | 02/14/2012 |
| 8110870 | Semiconductor device A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact... | 02/07/2012 |
| 8101992 | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access transistors extending generally upward and aligned generally atop a corresponding local data/bit line. Select... | 01/24/2012 |
| 8093652 | Breakdown voltage for power devices A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surf... | 01/10/2012 |
| 8084812 | Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in... | 12/27/2011 |
| 8084811 | Power devices with super junctions and associated methods manufacturing Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trenc... | 12/27/2011 |
| 8076717 | Vertically-oriented semiconductor selection device for cross-point array memory A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The se... | 12/13/2011 |
| 8058683 | Access device having vertical channel and related semiconductor device and a method of fabricating the access device An access device and a semiconductor device are disclosed. The access device includes a vertically oriented channel separating a lower source/drain region and an upper source/drain region, a gate dielectric disposed on the channel, and a unified gate electrode/conne... | 11/15/2011 |
| 8039892 | Semiconductor device and a method for manufacturing a semiconductor device A semiconductor device is disclosed. In one embodiment, the semiconductor device includes a channel formation region formed on a side wall, having a mixture of a first semiconductor material with a first lattice constant, a second semiconductor material and carbon, ... | 10/18/2011 |
| 8039893 | CMOS inverter coupling circuit comprising vertical transistors There is provided a semiconductor device formed of a highly integrated high-speed CMOS inverter coupling circuit using SGTs provided on at least two stages. A semiconductor device according to the present invention is formed of a CMOS inverter coupling circuit in wh... | 10/18/2011 |
| 8035158 | Semiconductor device Aiming at realizing high breakdown voltage and low ON resistance of a semiconductor device having the super-junction structure, the semiconductor device of the present invention has a semiconductor substrate having an element forming region having a gate electrode f... | 10/11/2011 |
| 8022471 | Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further comprises tilt-angle implanted body... | 09/20/2011 |
| 8008712 | Metallization and its use in, in particular, an IGBT or a diode The invention relates to a metallization for an IGBT or a diode. In the case of this metallization, a copper layer (10, 12) having a layer thickness of approximately 50 μm is applied to the front side and/or rear side of a semiconductor body (1) direc... | 08/30/2011 |
| 8004037 | MOS type semiconductor device A surface between gate electrodes in an MOS gate structure is patterned so that missing portions are partially provided in surfaces of n+ emitter regions to thereby enlarge surface areas of p+ contact regions surrounded by the surfaces of the n... | 08/23/2011 |
| 7994569 | Semiconductor device and method for forming the same A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power semiconductor is a vertical insulated gate bipolar transistor with injection efficiency adjustment formed by high... | 08/09/2011 |
| 7989880 | Nonvolatile semiconductor memory device and method of manufacturing the same A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped por... | 08/02/2011 |
| 7977738 | Semiconductor memory device and manufacturing method thereof A semiconductor memory device includes bodies electrically floating; sources; drains; gate electrodes, each of which is adjacent to one side surface of the one of the bodies via a gate dielectric film; plates, each of which is adjacent to the other side surface of t... | 07/12/2011 |
| 7977737 | Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capac... | 07/12/2011 |
| 7977736 | Vertical channel transistors and memory devices including vertical channel transistors A semiconductor device is provided which includes an NMOS vertical channel transistor located on a substrate and including a p+ polysilicon gate electrode surrounding a vertical p-channel region, and a PMOS vertical channel transistor located on the substrate and in... | 07/12/2011 |
| 7968937 | Vertical transistor and array with vertical transistors A vertical transistor includes a substrate, a semiconductor structure, a gate, a gate dielectric layer, and a conductive layer. The semiconductor structure is disposed on the substrate and includes two vertical plates and a bottom plate. The bottom plate has an uppe... | 06/28/2011 |
| 7960780 | Vertical-type semiconductor device In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surroundi... | 06/14/2011 |
| 7948027 | Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same An embedded bit line structure, in which, a substrate includes an insulator layer having an original top surface and a semiconductor layer on the original top surface of the insulator layer, and a bit line is disposed within the lower portion of the trench along one... | 05/24/2011 |
| 7943989 | Nano-tube MOSFET technology and devices This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constitutin... | 05/17/2011 |
| 7943988 | Power MOSFET with a gate structure of different material A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over... | 05/17/2011 |
| 7943987 | Semiconductor component with a drift zone and a drift control zone A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with ... | 05/17/2011 |
| 7923771 | Semiconductor device and method for manufacturing the same A semiconductor device (10) of the present invention includes: a drift layer (5) that includes a reference concentration layer (4) including an impurity of a first conductive type at a first reference concentration and a low concentration layer ... | 04/12/2011 |
| 7915671 | Semiconductor device having super junction structure A semiconductor device includes a silicon substrate having a (110)-oriented surface, a PN column layer disposed on the (110)-oriented surface, a channel-forming layer disposed on the PN column layer, a plurality of source regions disposed at a surface portion of the... | 03/29/2011 |
| 7910986 | Semiconductor memory device and data processing system A semiconductor memory device includes a silicon pillar, a gate electrode covering a side surface of the silicon pillar via a gate insulation film, diffusion layers (11, 12) provided in a lower part and an upper part, respectively of the silicon pillar, a bit... | 03/22/2011 |
| 7902596 | Bidirectional semiconductor device and a manufacturing method thereof A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in... | 03/08/2011 |
| 7884419 | Semiconductor device and method of fabricating the same Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device includes a first conductive well region in a semiconductor substrate and a second conductive well region on or in the first conductive well region. A g... | 02/08/2011 |
| 7880224 | Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two secti... | 02/01/2011 |
