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| Number | Title | Issue Date |
| 8183616 | Semiconductor device, RF-IC and manufacturing method of the same Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an inter... | 05/22/2012 |
| 8169014 | Interdigitated capacitive structure for an integrated circuit System and method for an improved interdigitated capacitive structure for an integrated circuit. A preferred embodiment comprises a first layer of a sequence of substantially parallel interdigitated strips, each strip of either a first polarity or a second polarity,... | 05/01/2012 |
| 8138539 | Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive members, and a plurality of second parallel conductive members disposed over the plurality of first paralle... | 03/20/2012 |
| 8120086 | Low leakage capacitors including portions in inter-layer dielectrics An integrated circuit structure includes a semiconductor substrate including a first region and a second region; an insulation region in the second region of the semiconductor substrate; and an inter-layer dielectric (ILD) over the insulation region. A transistor is... | 02/21/2012 |
| 8053824 | Interdigitated mesh to provide distributed, high quality factor capacitive coupling Apparatuses and methods for increasing well distributed, high quality-factor on-chip capacitance of integrated circuit devices are disclosed. In one aspect, an integrated circuit device structure includes a first metal line implemented on a metallization layer of a ... | 11/08/2011 |
| 8022458 | Capacitors integrated with metal gate formation A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate; and a capacitor over the substrate. The capacitor includes a first layer including a first... | 09/20/2011 |
| 7994561 | Semiconductor device for preventing the leaning of storage nodes A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are... | 08/09/2011 |
| 7968929 | On-chip decoupling capacitor structures The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with a passive capacitor formed in the back-end-of-line wiring to provide an improved overall capacitance density. In some embodiments, the structure includes... | 06/28/2011 |
| 7960773 | Capacitor device and method for manufacturing the same This invention provides a capacitor device with a high dielectric constant material and multiple vertical electrode plates. The capacitor devices can be directly fabricated on a wafer with low temperature processes so as to be integrated with active devices formed o... | 06/14/2011 |
| 7902583 | Capacitor pair structure for increasing the match thereof A capacitor pair structure for increasing the match thereof has two finger electrode structures interlacing with each other in parallel and a common electrode being between the two finger electrode structures to form a capacitor pair structure with an appropriate ra... | 03/08/2011 |
| 7838919 | Capacitor structure The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a secon... | 11/23/2010 |
| 7768055 | Passive components in the back end of integrated circuits Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed... | 08/03/2010 |
| 7763925 | Semiconductor device incorporating a capacitor and method of fabricating the same A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region s... | 07/27/2010 |
| 7745868 | Semiconductor device and method of forming the same A semiconductor device may include a MOS transistor having source and drain regions in a semiconductor substrate, a first inter-layer insulator having first contact holes that reach the source and drain regions over the MOS transistor. Cell contact plugs in the firs... | 06/29/2010 |
| 7667256 | Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement An integrated circuit arrangement is disclosed. In one embodiment, the integrated circuit arrangement includes at least three conductive structure levels in which in each case elongated interconnects are arranged. ... | 02/23/2010 |
| 7663175 | Semiconductor integrated circuit device A semiconductor integrated circuit device provided with a plurality of power supply wire layers including a first potential power supply wire and a second potential power supply wire formed in different layers. At least one capacitor contact wire extends from one of... | 02/16/2010 |
| 7659568 | Monolithic ceramic capacitor and method for adjusting equivalent series resistance thereof An external electrode structure for a monolithic ceramic capacitor provided with a function as a resistance element is capable of preventing a reduction of the external electrode due to baking in a reducing atmosphere, so that Ni or a Ni alloy can be used in an inte... | 02/09/2010 |
| 7638830 | Vertical metal-insulator-metal (MIM) capacitors An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielect... | 12/29/2009 |
| 7635888 | Interdigitated capacitors The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide opti... | 12/22/2009 |
| 7633111 | Semiconductor structure A semiconductor structure, for improving rectifier efficiency in passive backscatter transponders or backscatter remote sensors for use in high-frequency electromagnetic fields, is provided. The semiconductor structure has a dielectric layer on whose upper side is a... | 12/15/2009 |
| 7528433 | Capacitor structure A capacitor structure with a cross-coupling design is provided. In the capacitor structure, conductive lines or electrode plates are coupled together by cross coupling an electrode above or below or aside the other electrode. By cross coupling and fewer vias, the la... | 05/05/2009 |
| 7485912 | Flexible metal-oxide-metal capacitor design A flexible scheme for forming a multi-layer capacitor structure is provided. The multi-layer capacitor structure includes a first electrode and a second electrode extending through at least one metallization layer, wherein the first electrode and the second electrod... | 02/03/2009 |
| 7473955 | Fabricated cylinder capacitor for a digital-to-analog converter A fabricated cylinder capacitor having two or more layers is provided, each layer having a bottom plate and top plate portions. A first set of vias connect the bottom plate portions and a second set of vias connect the top plate portions. The bottom plate portions a... | 01/06/2009 |
| 7456462 | Fabricated U-shaped capacitor for a digital-to-analog converter A layered capacitor having top and bottom plates formed from multiple layers. The capacitor has a bottom layer comprising a bottom plate portion and at least one upper layer, each upper layer comprising top and bottom plate portions. A first set of vias connect the ... | 11/25/2008 |
| 7436069 | Semiconductor device, having a through electrode semiconductor module employing thereof and method for manufacturing semiconductor device having a through electrode The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes 103 extending through the silicon substrate 101 is provided. An insulating film 105 is buried within the through hole 103. A ... | 10/14/2008 |
| 7432545 | Semiconductor device A capacity element with a simple configuration exhibits excellent production reliability. A semiconductor device 100 includes a capacity element consisting of a lower electrode 102, an SiCN film 107 and an upper electrode 113. In an insul... | 10/07/2008 |
| 7417275 | Capacitor pair structure for increasing the match thereof A capacitor pair structure for increasing the match thereof has two finger electrode structures interlacing with each other in parallel and a common electrode being between the two finger electrode structures to form a capacitor pair structure with an appropriate ra... | 08/26/2008 |
| 7385241 | Vertical-type capacitor structure Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at least one dielectric layer on the substrate to insulate the first ele... | 06/10/2008 |
| 7382014 | Semiconductor device with capacitor suppressing leak current A semiconductor device with a capacitor includes a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer including more than one polycrystalline tantalum oxide layer and more than one separation layer, wherein the polycry... | 06/03/2008 |
| 7378739 | Capacitor and light emitting display using the same A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer,... | 05/27/2008 |
| 7375376 | Semiconductor display device and method of manufacturing the same A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 05/20/2008 |
| 7358555 | Semiconductor device While improving the frequency characteristics of a decoupling capacitor, suppressing the voltage drop of a source line and stabilizing it, the semiconductor device which suppressed decline in the area efficiency of decoupling capacitor arrangement is offered. | 04/15/2008 |
| 7348624 | Semiconductor device including a capacitor element A semiconductor device having a capacitor including a first electrode, a second electrode and an insulator. The semiconductor device includes first layers and second layers laminated alternately. The first layers each includes lines of the first electrode and lines ... | 03/25/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7342314 | Device having a useful structure and an auxiliary structure The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having... | 03/11/2008 |
| 7326990 | Semiconductor device and method for fabricating the same A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least on... | 02/05/2008 |
| 7321150 | Semiconductor device precursor structures to a double-sided capacitor or a contact A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least one opening in an insulating layer on a semiconductor wafer. A first c... | 01/22/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7317221 | High density MIM capacitor structure and fabrication process A stacked integrated circuit (IC) MIM capacitor structure and method for forming the same the MIM capacitor structure including a first MIM capacitor structure formed in a first IMD layer comprising an first upper and first lower electrode portions; at least a secon... | 01/08/2008 |
| 7312131 | Method for forming multilayer electrode capacitor A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connecte... | 12/25/2007 |
