Class 257/306 - Stacked capacitor

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the capacitor device contains a number
No. of patents: 2148
Last issue date: 05/29/2012

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Number	Title	Issue Date
8188529	Semiconductor device and method for manufacturing the same A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the ...	05/29/2012
8183615	Memory cell with a vertically oriented transistor coupled to a digit line and method of forming the same A memory cell, array and device include an active area formed in a substrate with a vertical transistor including a first end disposed over a first portion of the active area. The vertical transistor is formed as an epitaxial post on the substrate surface, extends f...	05/22/2012
8134196	Integrated circuit system with metal-insulator-metal circuit element An integrated circuit system is provided including forming a substrate, forming a first contact having multiple conductive layers over the substrate and a layer of the multiple conductive layers on other layers of the multiple conductive layers, forming a dielectric...	03/13/2012
8125014	Semiconductor device and fabricating method of the same Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the open...	02/28/2012
8106438	Stud capacitor device and fabrication method The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the substrate and the...	01/31/2012
8101986	Dynamic random access memory with silicide contacts, CMOS logic section and LDD structure In a DRAM-incorporated semiconductor device (SOC) which has a DRAM section and a logic section being formed on one and the same substrate, with the object of providing, with low cost, a SOC having necessary and sufficient characteristics in the DRAM section, while a...	01/24/2012
8093641	Storage capacitor and method of manufacturing a storage capacitor An integrated circuit including a storage capacitor suitable for use in a DRAM cell, as well as to a method of manufacturing such a storage capacitor is disclosed. The storage capacitor is formed at least partially above a semiconductor substrate surface. The invent...	01/10/2012
8093643	Multi-resistive integrated circuit memory A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern re...	01/10/2012
8093642	Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insu...	01/10/2012
8049263	Semiconductor device including metal-insulator-metal capacitor and method of manufacturing same A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric film formed over the lower electrode, and an upper electrode formed ove...	11/01/2011
8049262	Semiconductor device with increased channel length and method for fabricating the same A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is buried into both the trench and the first recess region. An active region is defined by the field oxide lay...	11/01/2011
8030697	Cell structure of semiconductor device having an active region with a concave portion A cell structure of a semiconductor device includes an active region, having a concave portion, and an inactive region that defines the active region. A gate pattern in the active region is arranged perpendicular to the active region. A landing pad on the active reg...	10/04/2011
7999301	Semiconductor device and method of manufacturing the same After a ferroelectric capacitor (1) is formed and before a wiring (15) to be a pad is formed, an alumina film (11) is formed as a diffusion suppressing film suppressing diffusion of hydrogen and moisture. Subsequently, the wiring (15) is ...	08/16/2011
7985999	Semiconductor device having capacitor A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mo...	07/26/2011
7982254	Semiconductor device and method of fabricating the same A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the pr...	07/19/2011
7977725	Integrated circuit semiconductor device including stacked level transistors An integrated circuit semiconductor device includes a first transistor formed at a lower substrate and configured with at least one of a vertical transistor and a planar transistor. A bonding insulation layer is formed on the first transistor, and an upper substrate...	07/12/2011
7977724	Capacitor and method of manufacturing the same comprising a stabilizing member A capacitor includes a cylindrical storage electrode formed on a substrate. A ring-shaped stabilizing member encloses an upper portion of the storage electrode to structurally support the storage electrode and an adjacent storage electrode. The ring-shaped stabilizi...	07/12/2011
7956400	MIM capacitor integration An integrated metal-insulator-metal capacitor is formed so that there is an extension portion of its top plate that does not face any portion of the bottom plate, and an extension portion of its bottom plate that does not face any portion of the top plate. Vias conn...	06/07/2011
7952129	Semiconductor devices having a vertical channel transistor Embodiments according to the inventive concept can provide semiconductor devices including a substrate and a plurality of active pillars arranged in a matrix on the substrate. Each of the pillars includes a channel part that includes a channel dopant region disposed...	05/31/2011
7939877	DRAM unit cells, capacitors, methods of forming DRAM unit cells, and methods of forming capacitors Some embodiments include methods of forming capacitors. A first capacitor storage node may be formed within a first opening in a first sacrificial material. A second sacrificial material may be formed over the first capacitor storage node and over the first sacrific...	05/10/2011
7936001	Semiconductor device In a pair of adjacent stack contact and stack contact in the semiconductor device, the plugs and the plugs are disposed so that a center-to-center distance of the plugs extending through a second interlayer insulating film, which is thicker than the first interlayer...	05/03/2011
7932550	Method of forming high aspect ratio structures An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structur...	04/26/2011
7919803	Semiconductor memory device having a capacitor structure with a desired capacitance and manufacturing method therefor A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films therebetween, a contact plug connects an upper face of each lower electro...	04/05/2011
7902582	Tantalum lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal e...	03/08/2011
7893481	Top electrode barrier for on-chip die de-coupling capacitor and method of making same An improvement in the method of fabricating on chip decoupling capacitors which help prevent L di/dt voltage droop on the power grid for high surge current conditions is disclosed. The inclusion of a hybrid metal/metal nitride top electrode/barrier provides for a lo...	02/22/2011
7884409	Semiconductor device and method of fabricating the same A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate,...	02/08/2011
7884410	Nonvolatile memory devices and methods of fabricating the same Example embodiments may provide nonvolatile memory devices and example methods of fabricating nonvolatile memory devices. Example embodiment nonvolatile memory devices may include a switching device on a substrate and/or a storage node electrically connected to the ...	02/08/2011
7872292	Capacitance dielectric layer and capacitor A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the se...	01/18/2011
7859039	X-shaped semiconductor capacitor structure A semiconductor capacitor structure includes a first metal layer, a second metal layer, a first set of via plugs, a second set of via plugs, and a dielectric layer. The first metal layer includes a first portion, a plurality of parallel-arranged second portions, a t...	12/28/2010
7825451	Array of capacitors with electrically insulative rings The invention includes methods and integrated circuitry. Pillars project outwardly from openings in a first material over individual capacitor storage node locations. Insulative material is deposited over the first material laterally about sidewalls of the projectin...	11/02/2010
7825452	Memory cell with buried digit line A memory cell, array and device include an active area formed in a substrate with a vertical transistor including a first end disposed over a first portion of the active area. The vertical transistor is formed as an epitaxial post on the substrate surfaces extends f...	11/02/2010
7816721	Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain w...	10/19/2010
7786523	Capacitor of dynamic random access memory and method of manufacturing the capacitor A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate elec...	08/31/2010
7781819	Semiconductor devices having a contact plug and fabrication methods thereof Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hol...	08/24/2010
7759717	Capacitors comprising dielectric regions having first and second oxide material portions of the same chemical compositon but different densities A capacitor includes a first capacitor electrode which includes conductive metal. A second capacitor electrode is spaced from the first capacitor electrode. A capacitor dielectric region is received between the first and second capacitor electrodes. Such region comp...	07/20/2010
7745867	Integrated DRAM process/structure using contact pillars A capacitor under bitline DRAM memory cell and method for its fabrication provides a high density memory cell with the capacitor formed in the PMD layer. The memory cell utilizes several variations of storage contact pillar structures as, for example, a storage plat...	06/29/2010
7741671	Capacitor for a semiconductor device and manufacturing method thereof Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; ...	06/22/2010
7741670	Semiconductor decoupling capacitor A semiconductor capacitor that includes a plurality of overlapping conductive layers and a field-effect transistor. The plurality of conductive layers include a first and second conductive layers that are spaced apart to creating a capacitance between the plurality ...	06/22/2010
7728373	DRAM device with cell epitaxial layers partially overlap buried cell gate electrode A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cel...	06/01/2010
7728374	Embedded memory device and a manufacturing method thereof An embedded memory device solves the problem of the low reliability of the circuit due to the unstable power source. The embedded memory includes a metal-oxide semiconductor (MOS) capacitor and a metal-insulator-metal (MIM) capacitor to increase the stability of the...	06/01/2010

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Class 257/306 - Stacked capacitor