Class 257/279 - Pn junction gate in compound semiconductor material (e.g., GaAs)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter including a pn junction gate formed in a
No. of patents: 105
Last issue date: 11/09/2010

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Number	Title	Issue Date
7829919	Semiconductor device A semiconductor device which can prevent peeling off of a gate electrode is provided. The semiconductor device has GaN buffer layer 12 formed on substrate 11, undoped AlGaN layer 13 formed on this buffer layer 12, drain electrode 16	11/09/2010
7635882	Logic switch and circuits utilizing the switch A logic switch intentionally utilizes GIDL current as its primary mechanism of operation. Voltages may be applied to a doped gate overlying and insulated from a pn junction. A first voltage initiates GIDL current, and the logic switch is bidirectionally conductive. ...	12/22/2009
7554138	Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer The invention relates to a method of manufacturing a semiconductor strained layer and to a method of manufacturing a semiconductor device (10) in which a semiconductor body (11) of silicon is provided, at a surface thereof, with a first semiconductor l...	06/30/2009
7531854	Semiconductor device having strain-inducing substrate and fabrication methods thereof A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from t...	05/12/2009
7345329	Method for reduced N+ diffusion in strained Si on SiGe substrate The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N typ...	03/18/2008
7339235	Semiconductor device having SOI structure and manufacturing method thereof A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel dire...	03/04/2008
7297580	Methods of fabricating transistors having buried p-type layers beneath the source region The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer...	11/20/2007
7235862	Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ...	06/26/2007
7211861	Insulated gate semiconductor device An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate l...	05/01/2007
7180159	Bipolar transistor having base over buried insulating and polycrystalline regions A bipolar transistor in a monocrystalline semiconductor substrate (101), which has a first conductivity type and includes a surface layer (102) of the opposite conductivity type. The transistor comprises an emitter contact (110) on the surface l...	02/20/2007
7179731	Hypercontacting The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region ...	02/20/2007
7116567	GaN semiconductor based voltage conversion device A converter is provided having an AC input and a DC output. The converter includes a rectifier that receives the AC input and that provides a rectifier output, a series connected current to magnetic field energy storage device and current interrupter connected acros...	10/03/2006
7109100	Semiconductor device and method for manufacturing semiconductor device To provide a semiconductor device able to be made uniform in diffusion depth of the impurity in a diffusion layer by a single diffusion and to give the desired threshold voltage and improved in yield and a method of producing the same. The device has a channel layer...	09/19/2006
7081663	Gate-enhanced junction varactor with gradual capacitance variation A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-po...	07/25/2006
7078787	Design and operation of gate-enhanced junction varactor with gradual capacitance variation A semiconductor junction varactor is designed with gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing...	07/18/2006
7056779	Semiconductor power device A p type base layer is formed in one surface region of an n type base layer. An n type emitter layer is formed in a surface region of the p type base layer. An emitter electrode is formed on the n type emitter layer and the p type base layer. A trench is formed in t...	06/06/2006
7037785	Method of manufacturing flash memory device Disclosed is a method of manufacturing the flash memory device. The method comprises the steps of sequentially forming a tunnel oxide film, a first polysilicon film and a hard mask film on a semiconductor substrate, etching portions of the hard mask film, the first ...	05/02/2006
7026797	Extremely high-speed switchmode DC-DC converters Switchmode DC—DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III-V compound semic...	04/11/2006
7026669	Lateral channel transistor A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports ...	04/11/2006
7015519	Structures and methods for fabricating vertically integrated HBT/FET device Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for f...	03/21/2006
6969627	Light-emitting diode and the manufacturing method of the same The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An L...	11/29/2005
6956239	Transistors having buried p-type layers beneath the source region The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer...	10/18/2005
6946717	High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup...	09/20/2005
6924516	Semiconductor device A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer,wherein: surfaces of the channel lay...	08/02/2005
6906350	Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source, a drain and a gate. The gate is situated between the source and the drain...	06/14/2005
6833571	Transistor device including buried source A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device when a voltage is applied to its gate. The drain region of the devic...	12/21/2004
6768146	III-V nitride semiconductor device, and protection element and power conversion apparatus using the same A GaN-based Schottky diode includes a sapphire substrate on which are formed a GaN buffer layer, an n+-type GaN layer, and an n-type GaN layer that has a surface portion thereof shaped to form a protrusion having an upper face with which a Ti electrode fo...	07/27/2004
6740911	α-WO3-gate ISFET devices and method of making the same Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solutio...	05/25/2004
6734476	Semiconductor devices having group III-V compound layers A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transiti...	05/11/2004
6670658	Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type ...	12/30/2003
6495871	Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type ...	12/17/2002
6492674	Semiconductor device having an improved plug structure and method of manufacturing the same A conductive plug is formed in an interlayer insulation film and on an isolating layer which isolates semiconductor elements on a semiconductor substrate. The conductive plug electrically connects a pair of active regions of the semiconductor elements for...	12/10/2002
6465834	Semiconductor device In the case of a large capacity DRAM (Dynamic Random Access Memory) of a conventional type, since a signal voltage read out from a memory cell is low, the action thereof is apt to be unstable. If a gain is added to a memory cell to obtain a large output v...	10/15/2002
6429471	Compound semiconductor field effect transistor and method for the fabrication thereof Disclosed is a compound semiconductor field effect transistor. The compound semiconductor field effect transistor has a charge absorption layer and a semiconductor laminated structure. The charge absorption layer includes a compound semiconductor layer of...	08/06/2002
6384428	Silicon carbide semiconductor switching device The present semiconductor switching device comprises a silicon carbide single crystal of hexagonal symmetry having a first conductive type and a semiconductor region of a second conductive type opposite to the first conductive type and locating in the sil...	05/07/2002
6365919	Silicon carbide junction field effect transistor A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a p...	04/02/2002
6313482	Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein Silicon carbide power devices having trench-based charge coupling regions include a silicon carbide substrate having a silicon carbide drift region of first conductivity type (e.g., N-type) and a trench therein at a first face thereof. A uniformly doped s...	11/06/2001
6303947	Silicon carbide vertical FET and method for manufacturing the same A silicon carbide vertical field-effect transistor is provided wherein a first conductivity type drift layer formed of silicon carbide is laminated on a first conductivity type silicon carbide drain layer, and a second conductivity type gate region and a ...	10/16/2001
6285046	Controllable semiconductor structure with improved switching properties The invention concerns a controllable semiconductor structure comprising a base region (101, 201, 301, 401), a source region (106, 212, 312, 412) and a drain region (107, 213, 313, 413) a conductive duct being provided in the base region between the sourc...	09/04/2001
6278144	Field-effect transistor and method for manufacturing the field effect transistor A high power FET has a first conductivity epitaxial layer overlying a semi-insulating substrate, a second conductivity epitaxial layer, a gate being in Schottky contact with the second conductivity layer, and source and drain regions being in ohmic contac...	08/21/2001

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Class 257/279 - Pn junction gate in compound semiconductor material (e.g., GaAs)