Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7989852 | Integrated circuits and interconnect structure for integrated circuits An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively. The first plane-like metal layer and the N plane-like metal layers are located sep... | 08/02/2011 |
| 7863657 | Efficient transistor structure An integrated circuit comprises a first drain region having a symmetric shape across at least one of horizontal and vertical centerlines. A first gate region has a first shape that surrounds the first drain region. A second drain region has the symmetric shape. A se... | 01/04/2011 |
| 7626219 | Surround gate access transistors with grown ultra-thin bodies A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching... | 12/01/2009 |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7372111 | Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the d... | 05/13/2008 |
| 7355257 | Semiconductor superjunction device A semiconductor superjunction device has a superjunction structure formed in a drift region of the device. The superjunction structure has alternately arranged n-type regions and p-type semiconductor regions layered parallel with the drift direction of carriers, per... | 04/08/2008 |
| 7339203 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region ... | 03/04/2008 |
| 7280380 | Semiconductor memory device and method of making design change to semiconductor chip The positions of the main driver 10, the output pad 20 and the first buffer 61 and the second buffer 62 are changed from the central region 111 to the peripheral region 120, and the first control signal line 31 and th... | 10/09/2007 |
| 7276758 | Non-volatile memory having three states and method for manufacturing the same Disclosed is a non-volatile memory having three data states and a method for manufacturing the same. The non-volatile memory includes a silicon substrate having a device separation film; a floating gate formed on the silicon substrate; a tunnel oxide film interposed... | 10/02/2007 |
| 7268378 | Structure for reduced gate capacitance in a JFET A junction field effect transistor (JFET) with a reduced gate capacitance. A gate definition spacer is formed on the wall of an etched trench to establish the lateral extent of an implanted gate region for a JFET. After implant, the gate is annealed. In addition to ... | 09/11/2007 |
| 7265398 | Method and structure for composite trench fill A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combinatio... | 09/04/2007 |
| 7262447 | Metal oxide silicon transistor and semiconductor apparatus having high λ and β performances A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor substrate via a gate oxide film. A threshold voltage of the source side r... | 08/28/2007 |
| 7244970 | Low capacitance two-terminal barrier controlled TVS diodes A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and... | 07/17/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7230275 | Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first cha... | 06/12/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7180105 | Normally off JFET A normally off JFET is formed by the implantation of a P base; and a shallower P island atop the P base, forming a narrow lateral conduction channel between the two and a shallow gate implant in the device top surface which forms a second lateral conduction channel ... | 02/20/2007 |
| 7170116 | Integrated circuit well bias circuitry Well bias circuitry for selectively biasing the voltages of the well areas of an integrated circuit. In one embodiment, the well bias circuitry includes a switching cell located in a row of cells of the integrated circuit for selectively coupling a voltage supply li... | 01/30/2007 |
| 7141856 | Multi-structured Si-fin Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produc... | 11/28/2006 |
| 7092609 | Method to realize fast silicon-on-insulator (SOI) optical device A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are... | 08/15/2006 |
| 7053404 | Active semiconductor component with an optimized surface area A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-section with an undulated closed ... | 05/30/2006 |
| 7045831 | Semiconductor device A semiconductor device of the present invention comprises a semiconductor chip, metal layers formed on a first main surface of the semiconductor chip, a first conductive layer layered on a second main surface of the semiconductor chip, consisting of a plurality of c... | 05/16/2006 |
| 7042046 | Super-junction semiconductor device and method of manufacturing the same Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with... | 05/09/2006 |
| 7026668 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 04/11/2006 |
| 7023033 | Lateral junction field-effect transistor A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semi... | 04/04/2006 |
| 7002205 | Super-junction semiconductor device and method of manufacturing the same Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with... | 02/21/2006 |
| 6972444 | Wafer with saw street guide A wafer is formed with metal traces that extend a distance across the wafer on opposite sides of a saw street. The resistances of the metal traces, which can each be formed from one or more layers of metal, are measured before the saw street is cut. During and after... | 12/06/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6936874 | Semiconductor apparatus having a large-size bus connection In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circ... | 08/30/2005 |
| 6919610 | Power semiconductor device having RESURF layer A semiconductor device including a drain layer having a first conductivity type, a drift layer having the first conductivity type, which is formed on the drain layer and has an impurity concentration lower than that in the drain layer, and a RESURF layer having a se... | 07/19/2005 |
| 6894346 | Semiconductor device A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the s... | 05/17/2005 |
| 6885110 | Electrical circuit board and TFT array substrate and liquid crystal display device utilizing the same TFT array substrates used for liquid crystal display panels are disclosed of which the fabrication processes are simplified and the manufacturing costs are reduced by reducing the number of masks used in fabricating the TFT array substrates. A gate wiring line metal... | 04/26/2005 |
| 6870189 | Pinch-off type vertical junction field effect transistor and method of manufacturing the same A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region (2) of a second conduc... | 03/22/2005 |
| 6855970 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 02/15/2005 |
| 6831328 | Anode voltage sensor of a vertical power component and use for protecting against short circuits The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate ( | 12/14/2004 |
| 6759693 | Nanotube permeable base transistor A permeable base transistor (PBT) having a base layer including metallic nanotubes embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter and collector layers of the semiconductor material. ... | 07/06/2004 |
| 6750477 | Static induction transistor In a static induction transistor, in addition to a first gate layer (4), a plurality of second gate layers (41) having a shallower depth and a narrower gap therebetween than those of the first gate layer (4) are provided in an area surrounded by... | 06/15/2004 |
| 6737677 | Wide bandgap semiconductor device and method for manufacturing the same The present invention provides a wide bandgap semiconductor device encompassing: (a) a drift layer of a first conductivity type made of a wide bandgap semiconductor material; (b) a body region of a second conductivity type made of the wide bandgap semiconductor mate... | 05/18/2004 |
| 6727533 | Semiconductor apparatus having a large-size bus connection In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circ... | 04/27/2004 |
| 6727559 | Compound semiconductor device A local oscillation FET has a source connecting pad, a drain connecting pad and a gate connecting pad. The source connecting pad occupies one corner of a substrate, and the drain and gate connecting pads are placed at the neighboring corners so that the three connec... | 04/27/2004 |
