Class 257/265 - In integrated circuit

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter in a single monolithic semiconductor chip
No. of patents: 56
Last issue date: 09/13/2011

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Number	Title	Issue Date
8017981	Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap powe...	09/13/2011
7332384	Technique for forming a substrate having crystalline semiconductor regions of different characteristics Different types of crystalline semiconductor regions are provided on a single substrate by forming a dielectric region within a first crystalline semiconductor region. Thereafter, a second crystalline region is positioned above the dielectric region by wafer bond te...	02/19/2008
7327012	Bipolar Transistor Devices A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ...	02/05/2008
7285831	CMOS device with improved performance and method of fabricating the same A complementary metal oxide semiconductor (CMOS) device having improved performance includes a first device active region including at least one pair of transistor active regions wherein one transistor active region has a first width and the other transistor active ...	10/23/2007
7274084	Enhanced PFET using shear stress A semiconductor device structure includes a gate structure disposed on a portion of substrate, source and drain regions disposed adjacent to the portion so as to form a channel region in the portion, and trench isolation regions located immediately adjacent to the s...	09/25/2007
7256086	Trench lateral power MOSFET and a method of manufacturing the same A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional...	08/14/2007
7235437	Multi-planar layout vertical thin-film transistor inverter A vertical thin-film transistor (V-TFT) inverter circuit and a method for forming a multi-planar layout TFT inverter circuit have been provided. The method comprising: forming a P-channel TFT with a gate, a first source/drain (S/D) region in a first horizontal plane...	06/26/2007
7179750	Method for manufacturing multi-thickness gate dielectric layer of semiconductor device In a method for manufacturing a multi-thickness gate dielectric layer of a semiconductor device, a first dielectric layer is formed on a semiconductor substrate. A second dielectric layer is formed using a different dielectric material from the material constituting...	02/20/2007
7135724	Structure and method for making strained channel field effect transistor using sacrificial spacer A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single...	11/14/2006
7109096	Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device including: providing a substrate having an insulating layer and a single crystal silicon layer formed on the insulating layer; forming a strain-inducing semiconductor layer on the single crystal silicon layer, the str...	09/19/2006
7091755	Low voltage input circuit with high voltage tolerance capability An input circuit includes a first buffer having a first power terminal coupled to a first supply voltage, a second power terminal coupled to ground potential, an input to receive an input signal, and an output to generate a first output signal, a second buffer havin...	08/15/2006
7056793	Semiconductor device and a method for manufacturing same A semiconductor device, and method for manufacturing the same, manufactured by a simpler process, compared to a conventional trench lateral power MOSFET for a withstand voltage of 80 V, having a smaller device pitch and lower on-resistance per unit area as compared ...	06/06/2006
7049661	Semiconductor device having epitaxial layer A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper sur...	05/23/2006
6974981	Isolation structures for imposing stress patterns A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate STI fill material. The STI regions are formed in the substrate layer and impose...	12/13/2005
6958505	Integrated circuit including active components and at least one passive component associated fabrication method There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating laye...	10/25/2005
6946700	Trench DRAM cell with vertical device and buried word lines A DRAM array having trench capacitor cells of potentially 4F2 surface area (F being the photolithographic minimum feature width), and a process for fabricating such an array. The array has a cross-point cell layout in which a memory cell is located at the...	09/20/2005
6906393	Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively l...	06/14/2005
6894346	Semiconductor device A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the s...	05/17/2005
6885078	Circuit isolation utilizing MeV implantation A circuit isolation technique that uses implanted ions in embedded portions of a wafer substrate to lower the resistance of the substrate under circuits formed on the wafer or portions of circuits formed on the wafer to prevent the flow of injected currents across t...	04/26/2005
6867445	Semiconductor memory devices including different thickness dielectric layers for the cell transistors and refresh transistors thereof Semiconductor memory devices include memory cell transistors having spaced apart memory cell transistor source and drain regions, and a memory cell transistor insulated gate electrode that includes a memory cell transistor gate dielectric layer. Refresh transistors ...	03/15/2005
6841430	Semiconductor and fabrication method thereof A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a silicon epitaxial layer formed on a silicon layer germanium relax which...	01/11/2005
6750486	Semiconductor and fabrication method thereof A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a silicon epitaxial layer formed on a silicon layer germanium relax which...	06/15/2004
6653655	Integrated semiconductor device including high-voltage interconnections passing through low-voltage regions The integrated semiconductor device includes a first chip of semiconductor material having first, high-voltage, regions at a first high-value voltage; a second chip of semiconductor material having second high-voltage regions connected to the first voltag...	11/25/2003
6631218	CMOS digital optical navigation chip A CMOS digital integrated circuit digitally captures an image, generates a result surface on which a minima resides, and compares the result surfaces. The correlation of the result surfaces represents a best fit image displacement between image frames....	10/07/2003
6615401	Blocked net buffer insertion A method of determining a desired connection path between a pair of points of a net separated by one or more blockages, while reducing path delays and ramp time violations and without placing buffers within any of the blockages....	09/02/2003
6534844	Integrated decoupling networks fabricated on a substrate having shielded quasi-coaxial conductors A hybrid circuit having a quasi-coaxial fully shielded conductor, and incorporating a ground plane on the component side of a substrate, can bypass and/or filter a signal using integrated thick film components and without through holes or vias. A thin pad...	03/18/2003
6433370	Method and apparatus for cylindrical semiconductor diodes Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second...	08/13/2002
6420754	Semiconductor integrated circuit device A gate electrode of a field-effect transistor used as a peripheral circuit is constituted by the same gate electrode structure as a double-level gate electrode structure of nonvolatile memory cells. A hole for connecting the two layers of the gate electro...	07/16/2002
6400574	Molded ball grid array A method and apparatus for encapsulating a BGA package. Specifically, the molded packaging material is configured to provide cups on the backside of the package, opposite the semiconductor device. The cups expose pads on the substrate and are configured t...	06/04/2002
6255710	3-D smart power IC An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positi...	07/03/2001
6232180	Split gate flash memory cell A split gate flash memory cell formed in a semiconductor substrate is disclosed. The memory cell comprises: a deep n-well formed in the substrate; a p-well formed in the deep n-well; a select gate structure formed on the p-well, the select gate structure ...	05/15/2001
6233368	CMOS digital optical navigation chip A CMOS digital integrated circuit (IC) chip on which an image is captured, digitized, and then processed on-chip in substantially the digital domain. A preferred embodiment comprises imaging circuitry including a photo cell array for capturing an image an...	05/15/2001
5877538	Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench A trench power MOSFET includes a body region which is not shorted to the source region and which is entirely covered by the source region within each cell of the MOSFET. The body region within each MOSFET cell is brought to the surface of the substrate (o...	03/02/1999
5847417	Semiconductor device and method of manufacturing same A normally-off semiconductor device with gate regions formed in a high-quality base is manufactured by forming a P+ layer in a lower surface of an N- substrate, selectively forming P+ gate regions in an upper surface of...	12/08/1998
5510632	Silicon carbide junction field effect transistor device for high temperature applications A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially...	04/23/1996
5488241	Integrated device combining a bipolar transistor and a field effect transistor An integrated device combines a bipolar transistor (10) and a junction field effect transistor (12) so as to produce an output voltage (Vd) which is higher than the breakdown voltage (BVCEO) of the bipolar transistor (10). A lateral extension (...	01/30/1996
5412234	Integrated semiconductor circuit having improved breakdown voltage characteristics It is possible to limit the voltage across a diode to the level of the pinch-off voltage of a JFET in an integrated circuit by connecting the diode in series with the JFET. As a result, the voltage offered through the JFET can be higher than the breakdown...	05/02/1995
5382816	Semiconductor device having vertical transistor with tubular double-gate A semiconductor device allowing control of its threshold voltage without requiring change in the materials of its gate electrodes and suitable for high density integration is disclosed. The semiconductor device includes a p type monocrystalline silicon su...	01/17/1995
5338949	Semiconductor device having series-connected junction field effect transistors A JFET configuration is obtained whose pinch-off voltage can be set by means of mask dimensions, without process changes, and which is at the same time suitable for operation at very low and very high voltages by cascoding of a first JFET with a diffused ...	08/16/1994
5323028	MOS composite static induction thyristor In a MOS controlled power device, or MOS composite a static induction thyristor, an static induction thyristor (SI thyristor) unit, a MOS transistor connected in cascode relation to the SI thyristor unit and a voltage regulation element are merged onto th...	06/21/1994

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Class 257/265 - In integrated circuit