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| Number | Title | Issue Date |
| 8063419 | Integrated circuit having compensation component An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to t... | 11/22/2011 |
| 7994548 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The... | 08/09/2011 |
| 7977713 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The... | 07/12/2011 |
| 7888712 | Semiconductor device and method for manufacturing same A semiconductor device includes a first conductive type SiC semiconductor substrate; a second conductive type well formed on the SiC semiconductor substrate; a first impurity diffusion layer formed by introducing a first conductive type impurity so as to be partly o... | 02/15/2011 |
| 7872285 | Vertical gallium nitride semiconductor device and epitaxial substrate Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epi... | 01/18/2011 |
| 7863656 | Semiconductor device A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer a... | 01/04/2011 |
| 7838913 | Hybrid FET incorporating a finFET and a planar FET A stack of a vertical fin and a planar semiconductor portion are formed on a buried insulator layer of a semiconductor-on-insulator substrate. A hybrid field effect transistor (FET) is formed which incorporates a finFET located on the vertical fin and a planar FET l... | 11/23/2010 |
| 7772621 | Semiconductor device with structured current spread region and method A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The... | 08/10/2010 |
| 7750377 | Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors A vertical JFET 1a according to the present invention has an n+ type drain semiconductor portion 2, an n-type drift semiconductor portion 3, a p+ type gate semiconductor portion 4, an n-type channel semiconduc... | 07/06/2010 |
| 7714365 | Semiconductor component with Schottky zones in a drift zone A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for producing a semiconductor component. ... | 05/11/2010 |
| 7629633 | Vertical thin film transistor with short-channel effect suppression A vertical thin film transistor (TFT) structure allows for a channel length to be scaled down, below that allowed by lateral TFT structures, to nanoscale (i.e., below 100 nm). However, while reducing the channel length, short-channel effects have been found in previ... | 12/08/2009 |
| 7554137 | Power semiconductor component with charge compensation structure and method for the fabrication thereof A semiconductor component (1) with charge compensation structure (3) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which pr... | 06/30/2009 |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7432145 | Power semiconductor device with a base region and method of manufacturing same A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). ... | 10/07/2008 |
| 7372087 | Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage A structure for use in a static induction transistor includes a semiconductor body having first and second semiconductor layers on a substrate, with the second layer having a dopant concentration of around an order of magnitude higher than the dopant concentration o... | 05/13/2008 |
| 7365372 | Semiconductor device and method for manufacturing semiconductor device The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to eac... | 04/29/2008 |
| 7342264 | Memory cell and method for manufacturing the same The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow trench isolations together def... | 03/11/2008 |
| 7304335 | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density A vertical-conduction and planar-structure MOS device having a double thickness gate oxide includes a semiconductor substrate including spaced apart active areas in the semiconductor substrate and defining a JFET area therebetween. The JFET area also forms a channel... | 12/04/2007 |
| 7294885 | Reverse blocking semiconductor component with charge compensation The invention relates to a field effect controllable semiconductor component, comprising a semiconductor body with a first terminal zone and a second terminal zone, a channel zone formed between the two terminal zones, a control electrode, and also a plurality of co... | 11/13/2007 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7268379 | Memory cell and method for manufacturing the same The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow trench isolations together def... | 09/11/2007 |
| 7265398 | Method and structure for composite trench fill A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combinatio... | 09/04/2007 |
| 7265393 | Thin-film transistor with vertical channel region A vertical thin-film transistor (V-TFT) is provided along with a method for forming the V-TFT. The method comprises: providing a substrate made from a material such as Si, quartz, glass, or plastic; conformally depositing an insulating layer overlying the substrate;... | 09/04/2007 |
| 7262946 | Integrated electronic disconnecting circuits, methods, and systems Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an external terminal is very rapidly propagated to shut off the blockin... | 08/28/2007 |
| 7250643 | Semiconductor device and method of manufacturing the same A semiconductor device includes: a gate electrode that is provided on a semiconductor layer; a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode; a source wall that extends from the source elect... | 07/31/2007 |
| 7250359 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer.... | 07/31/2007 |
| 7242040 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,... | 07/10/2007 |
| 7211845 | Multiple doped channel in a multiple doped gate junction field effect transistor A multiple doped channel in a multiple doped gate junction field effect transistor. In accordance with a first embodiment of the present invention, a junction field effect transistor (JFET) circuit structure comprises a vertical channel. The vertical channel compris... | 05/01/2007 |
| 7211844 | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemic... | 05/01/2007 |
| 7195987 | Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si1-x... | 03/27/2007 |
| 7180105 | Normally off JFET A normally off JFET is formed by the implantation of a P base; and a shallower P island atop the P base, forming a narrow lateral conduction channel between the two and a shallow gate implant in the device top surface which forms a second lateral conduction channel ... | 02/20/2007 |
| 7173284 | Silicon carbide semiconductor device and manufacturing method A silicon carbide semiconductor device that includes J-FETs has a drift layer of epitaxially grown silicon carbide having a lower impurity concentration level than a substrate on which the drift layer is formed. Trenches are formed in the surface of the drift layer,... | 02/06/2007 |
| 7126167 | Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises... | 10/24/2006 |
| 7098519 | Avalanche radiation detector The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor... | 08/29/2006 |
| 7087958 | Termination structure of DMOS device In one embodiment of the invention, a semiconductor device set includes at least one trench-typed MOSFET and a trench-typed termination structure. The trench-typed MOSFET has a trench profile and includes a gate oxide layer in the trench profile, and a polysilicon l... | 08/08/2006 |
| 7075132 | Programmable junction field effect transistor and method for programming the same A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source and drain are fabricated in a semiconductor substrate. A first porti... | 07/11/2006 |
| 7071055 | Method of forming a contact structure including a vertical barrier structure and two barrier layers This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or more barrier layers formed above the conductive layer, and a barrier... | 07/04/2006 |
| 7067363 | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density A vertical-conduction and planar-structure MOS device having a double thickness gate oxide includes a semiconductor substrate including spaced apart active areas in the semiconductor substrate and defining a JFET area therebetween. The JFET area also forms a channel... | 06/27/2006 |
| 7061739 | Overcurrent protection circuit Disclosed is an overcurrent protection circuit including an overcurrent trip and a switching element. A switched current passing through the switching element can be detected by the overcurrent trip and the switching element can be tripped to open if the switched cu... | 06/13/2006 |
| 7030680 | On chip power supply A technique, for drawing power from the external signal circuit to power on-chip elements for an integrated circuit diode (ICD), utilizes an integrated diode and capacitor. The capacitor is charged by the external applied voltage during the time the ICD blocks the e... | 04/18/2006 |
