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| Number | Title | Issue Date |
| 7928479 | Semiconductor device and method for manufacturing the same A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is ... | 04/19/2011 |
| 7915650 | Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the ... | 03/29/2011 |
| 7804114 | Tiered gate device with source and drain extensions In one embodiment, a tiered gate device is provided including a source, a drain, and a gate foot therebetween. A gate head is attached to the gate foot. A source extension extends from on an uppermost surface of the source toward the gate foot along the substrate. I... | 09/28/2010 |
| 7335968 | High permeability composite films to reduce noise in high speed interconnects A transmission line circuit provides a structure for improved transmission line operation on integrated circuits. The transmission line circuit includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed ... | 02/26/2008 |
| 7288844 | Semiconductor device, semiconductor circuit and method for producing semiconductor device The present invention is provided with a transmission line element having a ground wiring and a power supply wiring formed interposing an insulating film, on the power supply wiring on a semiconductor chip, lead or printed-circuit board, such that the capacitance pe... | 10/30/2007 |
| 7286616 | Data transmission system A data transmission system in which normal transmission can be performed irrespectively of the inserting orientation of a connector is provided. A transmitting device transmits to a receiving device a differential transmission signal including polarity decision data... | 10/23/2007 |
| 7230319 | Electronic substrate A substrate for mounting a device is disclosed. The substrate includes at least one transition for providing an RF connection to a lead of the device, the lead extending from a device input to an otherwise free end. The transition comprises two spaced apart electric... | 06/12/2007 |
| 7170118 | Field effect transistor (FET) device having corrugated structure and method for fabrication thereof Within both a field effect transistor (FET) device and a method for fabricating the field effect transistor (FET) device there is provided: (1) a semiconductor substrate; (2) a gate electrode formed over the semiconductor substrate and covering a channel region with... | 01/30/2007 |
| 7166877 | High frequency via Techniques that enable the transitioning of high frequency signals on a printed wiring board processed in accordance with industry standards (such as the IPC specifications) are disclosed. One embodiment provides a high frequency via structure for a printed wiring b... | 01/23/2007 |
| 7135717 | Semiconductor switches and switching circuits for microwave The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ... | 11/14/2006 |
| 7102482 | Relay and cross-connect The present invention relates to a fuse-relay including a first pole (1, 11, 21, 31, 81) and a second pole (2, 12, 22, 32, 82). According to the invention the fuse-relay includes a resilient device (5, 18, 27, 37, 87) that is held in an elastica... | 09/05/2006 |
| 7026222 | Method of forming a capacitor A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the grou... | 04/11/2006 |
| 7002252 | Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure A wiring structure for effectively reducing wiring capacitance, and a method of forming the wiring structure is disclosed. An underlying film having a dielectric constant lower than that of silicon oxide is formed on at least side surfaces of the wires of a wiring l... | 02/21/2006 |
| 6982471 | Semiconductor memory device The present invention relates to a semiconductor memory device including a fuse box wherein the layout of a fuse box used to control a memory cell array is improved, a fuse box is divided into a plurality of blocks, and an index mark is applied to every fuse box or ... | 01/03/2006 |
| 6951806 | Metal region for reduction of capacitive coupling between signal lines A structure includes a substrate, first and second signal lines above the substrate, where unused substrate surface area exists between the first and second signal lines, and a first shield line in the unused substrate surface area. To define the first shield line, ... | 10/04/2005 |
| 6946374 | Methods of manufacturing flash memory semiconductor devices A manufacturing method for fabricating flash memory semiconductor devices is disclosed. According to one example, the manufacturing method may include: forming a trench on a silicon substrate by forming a photoresist pattern on the silicon substrate and performing a... | 09/20/2005 |
| 6946717 | High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup... | 09/20/2005 |
| 6872993 | Thin film memory device having local and external magnetic shielding A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends along the back and side surfaces of a word line and/or digital lines of a... | 03/29/2005 |
| 6844603 | Nonvolatile NOR two-transistor semiconductor memory cell and associated NOR semiconductor memory device and method for the fabrication thereof The invention relates to a nonvolatile NOR two-transistor semiconductor memory cell, an associated semiconductor memory device and a method for the fabrication thereof, in which one-transistor memory cells are located in an active region formed in annular fashion an... | 01/18/2005 |
| 6828608 | Semiconductor integrated circuit device A semiconductor integrated circuit device having an input buffer connected to an input terminal, includes: a transfer gate one node of which is connected to the input terminal and the other node to an internal circuit, the transfer gate being on in an ordinary state... | 12/07/2004 |
| 6822702 | Pixellated devices such as active matrix liquid crystal displays A method of forming an active plate for a liquid crystal display is disclosed in which the source and drain conductors (28, 30), pixel electrodes (38) and column conductors (32) are formed by depositing and patterning a transparent conductor lay... | 11/23/2004 |
| 6809339 | Semiconductor device and method for manufacturing same In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial... | 10/26/2004 |
| 6784470 | Buffer, buffer operation and method of manufacture An integrated circuit includes an output buffer operable to drive an output node. The output buffer may comprise a MOSFET having a JFET integrated within a portion of a drain region of the MOSFET. The JFET may comprise a gate of second conductivity formed in semicon... | 08/31/2004 |
| 6762494 | Electronic package substrate with an upper dielectric layer covering high speed signal traces An electronic package component includes a flip-chip device mounted to a BGA substrate. The BGA substrate includes conductive traces formed on its upper surface and configured in a coplanar waveguide structure. The package includes a dielectric coating applied over ... | 07/13/2004 |
| 6747299 | High frequency semiconductor device A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer pro... | 06/08/2004 |
| 6712284 | High frequency semiconductor device In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, inte... | 03/30/2004 |
| 6642084 | Methods for forming aligned fuses disposed in an integrated circuit An integrated circuit includes a first conductive layer, an insulator layer disposed on the first conductive layer, and a second conductive layer disposed on the insulator layer. A first fuse is disposed in the first conductive layer and provides a first ... | 11/04/2003 |
| 6563150 | High frequency field effect transistor A traveling wave FET in which increasing distances between electrodes and the design of semiconductor regions associated with the various electrodes act to increase maximum gain parameters of the device. The relationship of the electrode series resistance... | 05/13/2003 |
| 6541290 | Architecture of laser fuse box of semiconductor integrated circuit and method for fabricating the same A fuse layout structure in a laser fuse box of a semiconductor integrated circuit and a method for fabricating the same. In one embodiment of the invention, the fuse layout structure in a laser fuse box of the semiconductor integrated circuit comprises a ... | 04/01/2003 |
| 6522004 | Semiconductor integrated circuit device In a semiconductor storage device, a line of lower-side backing wiring is provided on a line of gate wiring via an insulation layer, and a line of upper-side backing wiring is provided further on the top layer thereof via another insulation layer. Contact... | 02/18/2003 |
| 6518608 | Semiconductor integrated circuit device with enhanced protection from electrostatic breakdown A semiconductor integrated circuit device includes a plurality of internal circuits formed in a circuit forming region; a plurality of power lines separately connected to the internal circuits; a signal wire routed between the internal circuits; and a pro... | 02/11/2003 |
| 6507110 | Microwave device and method for making same A microwave device, including a substrate having a first surface and a second surface, a plurality of electrically conductive vias extending through the substrate from the first surface to the second surface, a first interconnect trace connected to the fi... | 01/14/2003 |
| 6433408 | Highly integrated circuit including transmission lines which have excellent characteristics An integrated circuit is composed of a substrate, a first conductor formed on the substrate, an insulating film formed on the first conductor and the substrate, a second conductor formed on the insulating film, a first interconnection formed in the insula... | 08/13/2002 |
| 6410948 | Memory cell arrays comprising intersecting slanted portions A memory device includes memory cells, bit lines, active area lines running generally in parallel to the bit lines, and transistors formed in each active area line and electrically coupling memory cells to corresponding bit lines. Each bit line includes s... | 06/25/2002 |
| 6365919 | Silicon carbide junction field effect transistor A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a p... | 04/02/2002 |
| 6274896 | Drive transistor with fold gate A drive transistor for an ink jet print head includes a semiconductor substrate having a serpentine channel of a first type doping, the channel comprising substantially parallel first and second serpentine channel portions, the first and second serpentine... | 08/14/2001 |
| 5998817 | High power prematched MMIC transistor with improved ground potential continuity A multicell transistor for use in a circuit has an input ground plane for an input waveguide and an output ground plane for an output waveguide. The multicell transistor includes a gate electrode coupled to the input waveguide, a drain electrode coupled t... | 12/07/1999 |
| 5945700 | Semiconductor device having a semiconductor switch structure A semiconductor device that has a structure wherein plural incremental circuits each of which is structured by a combination of a field effect transistor and a transmission line are connected and arranged in serial, in the arrangement of the above increme... | 08/31/1999 |
| 5889297 | High frequency semiconductor device with slots On two active areas formed in a semiconductor substrate, source electrodes, gate electrodes, and drain electrodes are disposed symmetrically to each other. A gate pad section electrically connected to both gate electrodes is disposed at one side of the ac... | 03/30/1999 |
| 5861644 | High-frequency traveling wave field-effect transistor A method of improving the performance of a traveling wave field-effect transistor operated at frequencies in the microwave range or above the microwave range comprising the steps of forming a depletion region beneath a gate electrode wherein, in a plane t... | 01/19/1999 |
