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Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 7994547 | Semiconductor devices and assemblies including back side redistribution layers in association with through wafer interconnects Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be... | 08/09/2011 |
| 7910961 | Image sensor with low crosstalk and high red sensitivity A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the ... | 03/22/2011 |
| 7586136 | Semiconductor structure The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping ... | 09/08/2009 |
| 7576375 | Thin film transistor array A thin film transistor array includes a substrate, scan lines, data lines, thin film transistors, upper electrodes and pixel electrodes. The scan lines and the data lines are disposed on the substrate to define pixel areas on the substrate. The thin film transistors... | 08/18/2009 |
| 7442970 | Active photosensitive structure with buried depletion layer An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. Du... | 10/28/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432576 | Grid metal design for large density CMOS image sensor A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where... | 10/07/2008 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7417268 | Image sensor An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit be... | 08/26/2008 |
| 7408197 | Organic light-emitting display device A scanning line, a signal line, a first current supply line, and a second current supply line are formed on a glass substrate, a first electrode is formed on the wiring layer comprising the above members, an organic layer comprising a hole transport layer, a light-e... | 08/05/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7388229 | Thin film transistor substrate, manufacturing method of thin film transistor, and display device A thin film transistor substrate includes a first conductive layer formed on a substrate, an anti-diffusion layer deposited on the first conductive layer, a semiconductor layer formed on the anti-diffusion layer, a gate insulating layer deposited on the semiconducto... | 06/17/2008 |
| 7382009 | Solid state image pickup device including an amplifying MOS transistor having particular conductivity type semiconductor layers, and camera using the same device To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention ... | 06/03/2008 |
| 7372497 | Effective method to improve sub-micron color filter sensitivity An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens ar... | 05/13/2008 |
| 7368755 | Array substrate of liquid crystal display and fabrication method thereof Provided is an array substrate of an LCD that includes a substrate, an active layer, a first insulating layer, and a gate electrode sequentially formed on the substrate. A source region and a drain region reside in predetermined regions of the active layer and each ... | 05/06/2008 |
| 7365380 | Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w... | 04/29/2008 |
| 7361927 | Transistor, circuit board, display and electronic equipment A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may b... | 04/22/2008 |
| 7332737 | Isolation trench geometry for image sensors A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less tha... | 02/19/2008 |
| 7322020 | Circuit layout and semiconductor substrate for photosensitive chip A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking... | 01/22/2008 |
| 7309878 | 3-D readout-electronics packaging for high-bandwidth massively paralleled imager Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure... | 12/18/2007 |
| 7292279 | Solid state image sensing device and photographing apparatus The present invention provides a solid state image sensing device capable of performing high-speed focal point adjustment without using a special optical system and a photographing apparatus including the device. Multiple photoelectric conversion elements are arrang... | 11/06/2007 |
| 7276749 | Image sensor with microcrystalline germanium photodiode layer A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charg... | 10/02/2007 |
| 7276731 | Wiring line assembly and method for manufacturing the same, and thin film transistor array substrate having the wiring line assembly and method for manufacturing the same In a method for fabricating a thin film transistor array substrate, a glass substrate undergoes an oxygen plasma treatment. A silver or silver alloy-based conductive layer is deposited onto the substrate, and patterned to thereby form a gate line assembly proceeding... | 10/02/2007 |
| 7276746 | Metal-oxide-semiconductor varactors Integrated circuit varactors and methods for varactor fabrication are provided. Varactors are formed on integrated circuits that contain complementary metal-oxide-semiconductor (CMOS) transistors. The same semiconductor fabrication process steps are used to form bot... | 10/02/2007 |
| 7265697 | Decoder of digital-to-analog converter In a decoder of a digital-to-analog converter, the gamma voltage selection is controlled by a reduced number of NMOS and PMOS transistors according to the characteristic of the NMOS and PMOS transistor, such that the layout area of the switch array is reduced. Moreo... | 09/04/2007 |
| 7265387 | Display device The present invention provides a display device including a scanning line (3) formed on an insulating substrate, an auxiliary capacitance line (4), a signal line (8), a gate electrode (2) connected to the scanning line, a source electrode... | 09/04/2007 |
| 7259444 | Optoelectronic device with patterned ion implant subcollector In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a ... | 08/21/2007 |
| 7259790 | MOS type solid-state image pickup device and driving method comprised of a photodiode a detection portion and a transfer transistor An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the ... | 08/21/2007 |
| 7244971 | Solid state image pickup device A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertic... | 07/17/2007 |
| 7236197 | Solid-state image sensor using junction gate type field-effect transistor as pixel A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is ... | 06/26/2007 |
| 7235831 | Light-receiving element and photoelectric conversion device In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provi... | 06/26/2007 |
| 7230288 | Solid-state image pickup device and fabrication method thereof A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical tran... | 06/12/2007 |
| 7217968 | Recessed gate for an image sensor A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surfa... | 05/15/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7214999 | Integrated photoserver for CMOS imagers An exemplary system and method for providing an integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS host wafer (460) bonded with a monocrystalline, optically active dono... | 05/08/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7180091 | Semiconductor device and manufacturing method thereof The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of t... | 02/20/2007 |
| 7180108 | Transistor, circuit board, display and electronic equipment A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may b... | 02/20/2007 |
| 7170117 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 01/30/2007 |
| 7161193 | Electro-optical device and electronic apparatus There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspo... | 01/09/2007 |
