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| Number | Title | Issue Date |
| 7598545 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices The present invention is directed to CMOS structures that include at least one nMOS device located on one region of a semiconductor substrate; and at least one pMOS device located on another region of the semiconductor substrate. In accordance with the present inven... | 10/06/2009 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7310965 | Compressor head, internal discriminator, external discriminator, manifold design for refrigeration recovery apparatus The compressor head, internal and/or external discriminator, and manifold design in general utilize ball valves on the suction and discharge of a cylinder head in the recovery of refrigerant liquid and/or vapor. The device facilitates the flashing of liquid refriger... | 12/25/2007 |
| 7159412 | Compressor head, internal discriminator, external discriminator, manifold design for refrigeration recovery apparatus The compressor head, internal and/or external discriminator, and manifold design in general utilize ball valves on the suction and discharge of a cylinder head in the recovery of refrigerant liquid and/or vapor. The device facilitates the flashing of liquid refriger... | 01/09/2007 |
| 7073346 | Compressor head, internal discriminator, external discriminator, manifold design for refrigerant recovery apparatus and vacuum sensor The compressor head, internal and/or external discriminator, and manifold design in general utilize ball valves on the suction and discharge of a cylinder head in the recovery of refrigerant liquid and/or vapor. The device facilitates the flashing of liquid refriger... | 07/11/2006 |
| 6933604 | Semiconductor device, semiconductor module and hard disk The back surface of a semiconductor chip (16) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this semiconductor chip (16). The back surface of this metal plate (23) and the back s... | 08/23/2005 |
| 6825877 | Multiplex bucket brigade circuit A sensor chip assembly time delay integration circuit useful with image sensing arrays uses a duplex bucket brigade circuit (120) with two or more charge transfer paths, a number of capacitors (130, 133, 136) common to the charge transfer paths, and a ... | 11/30/2004 |
| 6459077 | Bucket brigade TDI photodiode sensor A TDI sensor includes a bias charge voltage circuit, a reset voltage circuit, a bucket brigade column having a plurality of nodes, and a plurality of pinned photodiodes. Each photodiode is formed integral with a corresponding node of the bucket brigade co... | 10/01/2002 |
| 6445021 | Negative differential resistance reoxidized nitride silicon-based photodiode and method A photodiode that exhibits a photo-induced negative differential resistance region upon biasing and illumination is described. The photodiode includes an N+ silicon substrate, a silicon nitride layer formed on the N+ silicon substrate, a reoxidized nitrid... | 09/03/2002 |
| 6417531 | Charge transfer device with final potential well close to floating diffusion region A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge transfer region has a boundary sub-region contracting towar... | 07/09/2002 |
| 6380568 | CMOS image sensor and method for fabricating the same A CMOS image sensor containing a plurality of unit pixels, each unit pixel having a light sensing region and a peripheral circuit region, includes: a semiconductor substrate of a first conductive type; a transistor formed on the peripheral circuit region ... | 04/30/2002 |
| 6157081 | High-reliability damascene interconnect formation for semiconductor fabrication A high-reliability damascene interconnect structure and a method for forming the same are provided. An interlevel dielectric is formed over a semiconductor topography, and trenches for interconnects and/or vias are formed in the interlevel dielectric. A t... | 12/05/2000 |
| 6133596 | Near complete charge transfer device A charge transfer structure (30) includes a substrate comprised of semiconductor material and, coupled to a surface of the substrate, a plurality of serially coupled devices each having a gate terminal. The plurality of serially coupled devices include a ... | 10/17/2000 |
| 5436493 | Color imaging charge-coupled array with multiple photosensitive regions A photosensitive apparatus comprises a single crystal structure, wherein different regions of the structure are of different compositions. A first photosensitive region comprises a material adapted to generate electron-hole pairs in an area thereof expose... | 07/25/1995 |
| 5378916 | Color imaging charge-coupled array with multiple photosensitive regions A photosensitive apparatus comprises a single crystal structure, wherein different regions of the structure are of different compositions. A first photosensitive region comprises a material adapted to generate electron-hole pairs in an area thereof expose... | 01/03/1995 |
| 5365092 | Frontside illuminated charge-coupled device with high sensitivity to the blue, ultraviolet and soft X-ray spectral range A CCD which is designed and processed so that most of each pixel is covered only with an ultra-thin gate electrode so that the CCD can be frontside illuminated and still achieve good sensitivity in the ultra-violet and soft x-ray spectral range. More spec... | 11/15/1994 |
| 4987580 | Charge transfer device having capacitive feedback The invention relates to a semiconductor device including a charge transfer device having an output stage (8). The output stage (8) has a read-out zone (9), a feedback capacitor (11) and an amplifier (10). An inverting input (15) of the amplifier (10) is ... | 01/22/1991 |
| 4890307 | Input circuit of charge transfer device A charge transfer device includes a source barrier electrode arranged on portion of an insulation film which lies between a source region and a signal input electrode over a semiconductor substrate and formed to isolate the source region from the signal i... | 12/26/1989 |
| 4709380 | Bucket brigade charge transfer device with auxiliary gate electrode A high charge transfer efficiency BBD (bucket brigade device) has an auxiliary gate (M11, M12 . . . ) provided in a position next to each transfer gate (11, 12 . . . ) of a charge transfer MOSFET, the auxiliary gate being impressed w... | 11/24/1987 |
| 4358890 | Process for making a dual implanted drain extension for bucket brigade device tetrode structure The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A first thin N-type region is implanted at a first concentration in a port... | 11/16/1982 |
| 4344001 | Clocking signal drive circuit for charge transfer device A clocking signal drive circuit supplies at least one clocking signal in a charge transfer device which has a plurality of successive capacitive storage elements for sequentially holding a charge level representing a time sampled input signal, with each o... | 08/10/1982 |
| 4314162 | Filter circuit utilizing charge transfer device A filter circuit of the type utilizing a charge-transfer device, such as a bucket brigade device, comprises a clocking signal drive circuit for supplying a clocking signal; a clock signal generator at whose output a clocking control signal is provided; a ... | 02/02/1982 |
| 4254345 | Output circuit for bucket-brigade devices To reduce the D.C drift of bucket-brigade devices having common output circuits (emitter follower), an output circuit is provided having an additional transistor and an additional capacitor. The terminal on the gate side of the capacitor associated with t... | 03/03/1981 |
| 4250517 | Charge transfer, tetrode bucket-brigade device An improved BBD structure is disclosed which is realized with MOS, two layer, polysilicon technology. In the tetrode structure, the transfer gate overlaps the tetrode gate with no intermediate substrate region. The storage capacitor is off-set from the pr... | 02/10/1981 |
| 4208668 | Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate a... | 06/17/1980 |
| 4171229 | Improved process to form bucket brigade device The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel regio... | 10/16/1979 |
| 4157558 | Bucket-brigade charge transfer means for filters and other applications An MOS bucket-brigade device (BBD) fabricated with two layers of polycrystalline silicon is disclosed. Each stage includes a pair of spaced-apart regions, one of which is formed in a well. A holding stage is employed which includes a lightly doped substra... | 06/05/1979 |
| 4152715 | Silicon base CCD-bipolar transistor compatible methods and products CCDs and bipolar transistors are formed together on a silicon chip. For n channel CCDs and npn transistors, only a single extra diffusion is necessary in addition to the diffusions used for the CCDs alone. This step is diffusion of n+ collector... | 05/01/1979 |
| 4142199 | Bucket brigade device and process The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel regio... | 02/27/1979 |
| 4117514 | Solid state imaging device A solid state imaging device capable of converting one-dimensional or two-dimensional optical information into an electrical signal is disclosed. A signal charge stored in each of a plurality of photo-electric converter elements, which is proportional to ... | 09/26/1978 |
| 4100513 | Semiconductor filtering apparatus A semiconductor filtering apparatus substantially fabricated as a metal-oxide-semiconductor (MOS) integrated circuit that permits discrete time correlation or convolution of an analog input signal with a binary or analog correlating signal. The apparatus ... | 07/11/1978 |
| 4076986 | Device for reproducing the charge stored in an input capacitor in a plurality of output capacitors Arrangement allowing an input bucket brigade (BBD) stage to feed several other BBD stages in parallel with no loss of the signal transferred from the input stage to the subsequent ones. An input voltage corresponding to a charge quantity is stored in the ... | 02/28/1978 |
| 4047051 | Method and apparatus for replicating a charge packet A method and apparatus for duplicating or replicating an original packet of charge carriers such as electrons or holes while leaving the original charge packet unchanged and still available for further processing is described. A charge-coupled device (CCD... | 09/06/1977 |
| 4045810 | Bucket-brigade delay line having reduced parasitic capacitances An MOS bucket brigade delay line having reduced parasitic capacitances include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first ... | 08/30/1977 |
| 4035666 | Analogue shift register correlators Semiconductor charge devices are defined to effect a serial-to-parallel conversion of analogue signal information. In one aspect of the invention, a digital signal is extracted from an analogue noise environment by a shift register correlator comprising a... | 07/12/1977 |
| 4035667 | Input circuit for inserting charge packets into a charge-transfer-device An input circuit for a charge-transfer-device such as a bucket-brigade or charge-coupled-device incorporating an input terminal connected to an input diode source diffusion of the charge-transfer-device through a capacitor C. The nonlinear depletion capac... | 07/12/1977 |
| 4002513 | Bucket-brigade delay line having reduced parasitic capacitances and method for making the same An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality ... | 01/11/1977 |
| 4001862 | Charge transfer device Variable capacitance bucket brigade memory in which variable capacitances are used instead of fixed capacitances in order to reduce the Signal-Step-Response-Error.... | 01/04/1977 |
| 3999208 | Charge transfer semiconductor device A charge transfer semiconductor device includes charge transfer passages which are formed in the interior of a semiconductor substrate and between adjacent gate electrodes, so that when a control voltage is applied to the gate electrode, charges to be tra... | 12/21/1976 |
