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Dining Table Having Integral Dishwasher
A space-saving dishwasher, which may be installed within a counter top or table, having a dish-carrying rack that is vertically shiftable through the open top of the dishwasher for facilitating loading and unloading of the dishes.
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| Number | Title | Issue Date |
| 7719039 | Phase change memory structures including pillars A phase change memory cell has a first electrode, a heater, a phase change material, and a second electrode. The heater is over the first electrode, and the heater includes a pillar. The phase change material is around the heater. The second electrode is electricall... | 05/18/2010 |
| 7425735 | Multi-layer phase-changeable memory devices A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase... | 09/16/2008 |
| 7423300 | Single-mask phase change memory element A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting ... | 09/09/2008 |
| 7402851 | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes a... | 07/22/2008 |
| 7385235 | Spacer chalcogenide memory device The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings. ... | 06/10/2008 |
| 7355264 | Integrated passive devices with high Q inductors The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the b... | 04/08/2008 |
| 7304888 | Reverse-bias method for writing memory cells in a memory array A memory array having memory cells each comprising a diode and a phase change material or antifuse is reliably programmed by maintaining all word lines and bit lines connected to unselected memory cells at intermediate voltages and applying voltages to place the dio... | 12/04/2007 |
| 7265397 | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process... | 09/04/2007 |
| 7115927 | Phase changeable memory devices Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connecte... | 10/03/2006 |
| 7074317 | Method for fabricating trench capacitors for large scale integrated semiconductor memories An electrochemical method is provided for producing trenches for trench capacitors in p-doped silicon with a very high diameter/depth aspect ratio for large scale integrated semiconductor memories. Trenches (macropores) having a diameter of less than about 100 nm an... | 07/11/2006 |
| 7015520 | Charge-coupled devices having efficient charge transfer rates A camera includes a charge-coupled device having a substrate or well of a first conductivity type; a buried channel of a second conductivity type; a dielectric disposed on the substrate; six gates disposed on the dielectric that are space oriented sequentially 1 | 03/21/2006 |
| 6987294 | Charge-coupled device and method of fabricating the same A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substra... | 01/17/2006 |
| 6909126 | Imager cell with pinned transfer gate An imager cell includes a photoreceptor, a sense node, and a pinned transfer gate. The pinned transfer gate is tied to the same potential of a substrate of the imager cell and is disposed between the photoreceptor and the sense node in order to transfer charge betwe... | 06/21/2005 |
| 6849892 | Phase changeable memory devices having reduced cell areas Phase changeable memory devices include an integrated circuit substrate and first and second storage active regions on the integrated circuit substrate. The first and second storage active regions have a first width and a second width, respectively. A transistor act... | 02/01/2005 |
| 6720593 | Charge-coupled device having a reduced width for barrier sections in a transfer channel A charge-coupled device (CCD) includes first-level transfer electrodes and second-level transfer electrodes alternately arranged along a transfer channel, wherein charge storage sections underlying the first-level transfer electrodes have a larger width than barrier... | 04/13/2004 |
| 6688179 | Electrostatic pressure transducer and a method thereof A pressure transducer system includes a housing with a chamber, a member with a stored electrical charge, and a pair of electrodes that are at least partially in alignment with each other. At least a portion of the chamber is at a reference pressure. The ... | 02/10/2004 |
| 6573541 | Charge coupled device with channel well A solid-state CCD device suitable for forming into arrays and for use with suitable hardware to form video image capture devices and methods for fabricating same are provided.... | 06/03/2003 |
| 6507056 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 01/14/2003 |
| 6417531 | Charge transfer device with final potential well close to floating diffusion region A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge transfer region has a boundary sub-region contracting towar... | 07/09/2002 |
| 6313513 | AC switch device used for switching AC circuit and AC switch circuit having the AC switch device An AC switch device of the present invention comprises an n- region formed on a p-type semiconductor substrate, first and second p-type regions separately formed in the n- region, a first source region (n+ region) and a fi... | 11/06/2001 |
| 6218686 | Charge coupled devices A charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the first gate electrode, and a third gate electrode having one end portion parti... | 04/17/2001 |
| 6207981 | Charge-coupled device with potential barrier and charge storage regions A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the pote... | 03/27/2001 |
| 6100553 | Solid-state image sensor and a method for fabricating the same A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the ... | 08/08/2000 |
| 6097044 | Charge transfer device and method for manufacturing the same In a charge transfer device of the two-layer electrode, two-phase drive type, an N-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes ... | 08/01/2000 |
| 6078069 | Bidirectional horizontal charge transfer device A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the f... | 06/20/2000 |
| 6051853 | Semiconductor pressure sensor including reference capacitor on the same substrate A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing... | 04/18/2000 |
| 6043523 | Charge coupled device and method of fabricating the same A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a ... | 03/28/2000 |
| 6040587 | Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the e... | 03/21/2000 |
| 6008512 | Semiconductor device with increased maximum terminal voltage In a semiconductor island structure with passive side isolation, a method and structure for reducing corner breakdown where a device conductor crosses the edge of the island. The decrease in the field strength at the island edge between the conductor and ... | 12/28/1999 |
| 5998815 | CCD linear sensor The present invention intends to improve a difference between signal levels of odd-numbered pixels and even-numbered pixels in a CCD (charge coupled device) linear sensor. In a CCD linear sensor comprising a sensor region (1) having an array of a pluralit... | 12/07/1999 |
| 5986295 | Charge coupled device A charge coupled device and a manufacturing method therefor are provided. The charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the f... | 11/16/1999 |
| 5914506 | Charge coupled device having two-layer electrodes and method of manufacturing the same A charge coupled device has a plurality of N-diffused regions and a plurality of N- diffused regions arranged alternately along a charge transfer channel. A first electrode and second electrode overlying each N-diffused region and N-... | 06/22/1999 |
| 5891752 | Method for making charge coupled device with all electrodes of transparent conductor A method and apparatus of manufacturing an array of closely spaced electrodes wherein a semiconductor surface having a plurality cells that are capable of storing charge is fabricated such that there are a plurality of closely spaced electrodes associated... | 04/06/1999 |
| 5869853 | Linear charge-coupled device having improved charge transferring characteristics A linear CCD (charge-coupled device) including: a photodiode-array having a plurality of photodiodes for converting incident light plural charges, respectively; and a charge transfer part for transferring the charges of the photodiodes during a first phas... | 02/09/1999 |
| 5809102 | CCD having charge-injected potential barrier regions protected from overvoltages A charge-coupled device comprises a substrate, a charge transfer layer on the substrate, an insulating layer on the charge transfer layer, and a sequence of electrodes divided into recurrent groups of first, second, third and fourth electrodes each, the e... | 09/15/1998 |
| 5804845 | Image sensor having ITO electrodes with an ONO layer By incorporating an ITO electrode which is more transparent than polysilicon, and designing the pixel such that it has asymmetric gates with as much as possible of its light sensitive region covered by an ITO electrode, light sensitivity is increased. To ... | 09/08/1998 |
| 5796801 | Charge coupled device with high charge transfer efficiency In a charge coupled device including a semiconductor substrate having a semiconductor region, a plurality of nonactive barrier electrodes, a plurality of first electrodes and a plurality of second electrodes arranged between the nonactive barrier electrod... | 08/18/1998 |
| 5793070 | Reduction of trapping effects in charge transfer devices A charge transfer device including a semiconductor substrate, a gate electrode provided in association with the substrate, the gate electrode having a corresponding channel region through which charge is propagated, the channel region having a predetermin... | 08/11/1998 |
| 5641700 | Charge coupled device with edge aligned implants and electrodes A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment... | 06/24/1997 |
| 5627388 | CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof A CCD-solid state image sensor includes a sensing area for generating signal charges in response to incident light, a storage area for storing the signal charges from the sensing area, an HCCD (Horizontal Charge Coupled Device) for extracting the signal c... | 05/06/1997 |
